MIXG240W1200TEH IXYS | Alldatasheet

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© 2015 IXYS All rights reserved 1 - 5 20150909 MIXG240W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. tentative E72873 NTC 28, 29, 30 23, 24, 25 54, 55, 56 59, 60, 61 D1 D5 D2 D6D4 D3T1 T5 T2 T6T4 Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be consi- dered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. tentative X2PT IGBT Module Package: E3-Pack

  • Isolation Voltage: 4300 V~
  • Industry standard outline
  • RoHS compliant
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling Option:
  • Phase Change Material printed on base plate Part number MIXG240W1200TEH VCES = 1200 V IC25 = 370 A VCE(sat) = 1.7 V 6-Pack + NTC Applications:
  • AC motor drives
  • Solar inverter
  • Medical equipment
  • Uninterruptible power supply
  • Air-conditioning systems
  • Welding equipment
  • Switched-mode and resonant-mode power supplies
  • Inductive heating, cookers
  • Pumps, Fans Features / Advantages:
  • X2PT - 2nd generation Xtreme light Punch Through
  • Tvjm = 175°C
  • Easy paralleling due to the positive temperature coefficient of the on-state voltage
  • Rugged X2PT design results in: - short circuit rated for 10 μsec. - very low gate charge - low EMI - square RBSOA @ 2x Ic
  • Low V CE(sat) and low thermal resistance
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage

© 2015 IXYS All rights reserved 2 - 5 20150909 MIXG240W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. tentative tentative Inverter IGBT Ratings Symbol Definitions Conditions min. typ. max. VCES collector emitter voltage TVJ = 25°C 1200 V VGES VGEM max. DC gate voltage max. transient gate emitter voltage -20 -30 +20 +30 V V I C25 IC80 IC100 collector current TC = 25°C TC = 80°C TC = 100°C 370 280 240 A A A P tot total power dissipation TC = 25°C 1250 W VCE(sat) collector emitter saturation voltage IC = 200 A; VGE = 15 V TVJ = 25°C TVJ = 150°C 1.7 2 V V V GE(th) gate emitter threshold voltage IC = 8 mA; VGE = VGE TVJ = 25°C 5.5 7 V ICES collector emitter leakage current VCE = VCES ; VGE = 0 V TVJ = 25°C TVJ = 150°C 2 0.2 mA mA I GES gate emitter leakage current VGE = ±20 V 500 nA RG internal gate resistance 2.0 Ω Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VCE = 100 V; VGS = 0 V; f = 1 MHz 10.6 nF pF pF Q g Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VCE = 600 V; VGE = 15 V; IC = 200 A 630 nC nC nC t d(on) tr td(off) tf Eon Eoff Erec(off) urn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching VCE = 600 V; IC = 200 A TVJ = 25°C VGE = ±15 V; RG = 3.9 Ω (external) ns ns ns ns mJ mJ mJ t d(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching VCE = 600 V; IC = 200 A TVJ = 150°C VGE = ±15 V; RG = 3.9 Ω (external) 100 340 100 ns ns ns ns mJ mJ mJ RBSOA I CM reverse bias safe operating area VGE = ±15 V; RG = 3.9 Ω TVJ = 150°C VCEmax = 1200 V 400 A SCSOA t SC ISC short circuit safe operating area short circuit duration short circuit duration VCEmax = 1200 V VCE = 900 V; VGE = ±15 V TVJ = 150°C non-repetitive 900 10 μs A RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup 0.18

0.12 K/W

© 2015 IXYS All rights reserved 3 - 5 20150909 MIXG240W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. tentative tentative Inverter Diode Ratings Symbol Definitions Conditions min. typ. max. VRRM max. repetitive reverse voltage TVJ = 25°C 1200 V IF25 IF80 IF100 forward current TC = 25°C TC = 80°C TC = 100°C 275 205 175 A A A V F forward voltage IF = 200 A TVJ = 25°C TVJ = 150°C 1.9 2.2 V V I R reverse current * not applicable, see Ices at IGBT VR = VRRM TVJ = 25°C TVJ = 150°C * * mA mA QRM IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V -diF /dt = 3000 A/µs TVJ = 25°C IF = 200 A μC A ns mJ QRM IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V -diF /dt = 3000 A/µs TVJ = 150°C IF = 200 A 210 350 μC A ns mJ RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup 0.33

0.21 K/W

Symbol Definitions Conditions min. typ. max. Unit IRMS RMS current per terminal 300 A Tstg Top TVJ storage temperature operation temperature virtual junction temperature -40 -40 -40 125 150 175 Weight 270 g M D mounting torque 3 6 Nm dSpp dSpb creepage distance on surface terminal to terminal terminal to backside mm mm d App dApb striking distance through air terminal to terminal terminal to backside mm mm V ISOL isolation voltage t = 1 second t = 1 minute 4300 3600 V V R pin-chip resistance pin to chip V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF mΩ CP coupling capacity per switch between shorted pins of switch and back side metallization pF 50 / 60 Hz, RMS; IISOL < 1 mA Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIXG240W1200TEH MIXG240W1200TEH Box 5 517094 with Phase Change Material MIXG240W1200TEH -PC MIXG240W1200TEH Blister 12 XXX XX-XXXXX YYWWx 2D Data Matrix Logo UL Part number Date Code Location Part number M = Module I = IGBT X = XPT IGBT G = Gen 2 / std 240 = Current Rating [A] W = 6-pack 1200 = Reverse Voltage [V] T = Thermistor EH = E3-Pack

© 2015 IXYS All rights reserved 4 - 5 20150909 MIXG240W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. tentative tentative Temperature Sensor NTC Symbol Definitions Conditions min. typ. max. Unit R25 B25/50 resistance temperature coefficient TVJ = 25°C 4.75 5.0 3375 5.25 kW K Equivalent Circuits for Simulation *on die level IGBT FW Diode V0 max R0 max threshold voltage slope resistance * TVJ = 125°C V mW V0 max R0 max threshold voltage slope resistance * T VJ = 175°C 1.2 6.4 1.2 5.0 V mW 0 25 50 75 100 125 150 102 103 104 105 R [Ω] Typ. NTC resistance vs. temperature T C [°C ] I V0 R0

© 2015 IXYS All rights reserved 5 - 5 20150909 MIXG240W1200TEH IXYS reserves the right to change limits, test conditions and dimensions. tentative NTC 28, 29, 30 23, 24, 25 54, 55, 56 59, 60, 61 D1 D5 D2 D6D4 D3T1 T5 T2 T6T4 tentative Outlines E3-Pack 1 2 5 6 9 10 13 14 17 18 21 22 3032 3138 37 3644 43 4250 49 48