MIXA600PF650TSF IXYS | Alldatasheet

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Technical content

Phase leg + free wheeling Diodes + NTC XPT IGBT Module 12 8 7 Part number MIXA600PF650TSF Backside: isolated C25 CE(sat)VV 1.65 CES 720 650 V= V I= A Features / Advantages: Applications: Package:

  • High level of integration - only one power semiconductor module required for the whole drive
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
  • Temperature sense included
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage
  • AC motor drives
  • Pumps, Fans
  • Air-conditioning system
  • Inverter and power supplies
  • UPS SimBus F
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Height: 17 mm
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~3000 IXYS reserves the right to change limits, conditions and dimensions. 20121107Data according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

-di /dt = A/µs T = °C VCES V650collector emitter voltage collector emitter saturation voltage T = 25°Ccollector current A720 A C VJ Symbol Definition Ratings typ. max.min.Conditions Unit 490 VVCE(sat) total power dissipation 1750 W collector emitter leakage current 5.5 V turn-on delay time 30 nst reverse bias safe operating area A VGES V±20 VGEM max. transient gate emitter voltage T = °CC V Ptot gate emitter threshold voltage RBSOA 1200 ±30 T = °C T = °CVJ V max. DC gate voltage IC25 IC T = 25°CVJ I = A; V = 15 VCG E T = 25°CVJ VGE(th) ICES I = mA; V = VCG E C E V = V ; V = 0 VCE CES GE IGES T = 25°CVJ gate emitter leakage current V = ±20 VGE 1.8 1.85 4.84 mA 2 mA 1.8 1.5 G(on) total gate charge V = V; V = 15 V; I = ACEQ GE C 840 nC t t t E E d(on) r d(off) f on off 50 ns 100 ns 40 ns 6 mJ 22.8 mJ current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load V = V; I = A V = ±15 V; R = Ω CE C GE G V = ±15 V; R = ΩGE G V = VCEmax 650 short circuit safe operating area µs SCSOA 10T = °CVJV = V; V = ±15 VCE GEshort circuit durationt short circuit currentI SC SC R = Ω; non-repetitiveG 2400 A RthJC thermal resistance junction to case 0.085 K/W VRRM V650max. repetitive reverse voltage T = 25°CVJ T = 25°Cforward current A490 A C 340T = °CC IF25 IF T = 25°Cforward voltage V1.90 V VJ 1.70T = 125°CVJ VF I = AF T = 25°Creverse current mA* mA VJ *T = 125°CVJ IR R RRM T = 125°CVJ Q I t rr RM rr tbd µC tbd A tbd ns reverse recovery charge max. reverse recovery current reverse recovery time V = I = A; V = 0 V F FG E Erec tbd mJreverse recovery energy R RthJC thermal resistance junction to case 0.095 K/W V = V T = 25°CC T = 25°CVJ T = °CVJ VJ 600 9.6 600 600 600 600 1.3 1.3 1.3 300 360 300 I CM 1.65 RthCH thermal resistance case to heatsink 0.05 K/W RthCH thermal resistance case to heatsink 0.04 K/W * not applicable, see Ices value above IGBT Diode 300 V V = VCEmax 650 8080 8080 150 150 150 150 150 µA IXYS reserves the right to change limits, conditions and dimensions. 20121107Data according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

Logo UL Part number Date Code Location I X M A 600 PF 650 T SF Part number IGBT XPT IGBT Gen 1 / std Phase leg + free wheeling Diodes Thermistor \\ Temperature sensor SimBus F Module Current Rating [A] Reverse Voltage [V] Package TVJ °C MD Nm6mounting torque 3 Tstg °C125storage temperature -40 Weight g350 Symbol Definition typ. max.min.Conditions virtual junction temperature Unit MT Nm6terminal torque 3 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 12.7 10.0 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current Aper terminal 175-40 terminal to terminal SimBus F Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 0 25 50 75 100 125 150 102 103 104 105 R [ ] Typ. NTC resistance vs. temperature TC [°C] 50/60 Hz, RMS; I ≤ 1 mAISOL MIXA600PF650TSF 513794Box 3MIXA600PF650TSFStandard Rpin-chip resistance pin to chip 0.65 m Ω 2500 3000ISOL V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF threshold voltage V mΩ V0 max R0 max slope resistance * 1.1 1.8 1.21 Equivalent Circuits for Simulation T =VJ I V0 R0 IGBT Diode 175 °C* on die level T = 25°resistance kΩ5.25 K VJ 3375 R25 B25/50 54.75 temperature coefficient Symbol Definition typ. max.min.Conditions Unit Temperature Sensor NTC IXYS reserves the right to change limits, conditions and dimensions. 20121107Data according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved

1,2 1720,5 225057,562 94,5 110 122 137 152 0,8 R2,5 07,25 11,06 33,92 37,73 60,59 64,4 87,26 7,75 3,75 57,96 0,46 98 7 6 5 1 2 12 8 7 Outlines SimBus F IXYS reserves the right to change limits, conditions and dimensions. 20121107Data according to IEC 60747and per semiconductor unless otherwise specified © 2012 IXYS all rights reserved