MIXA20W1200MC IXYS | Alldatasheet

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© 2011 IXYS All rights reserved 1 - 6 20110304b MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE(sat) = 2.1 V Features:

  • Easy paralleling due to the positive temperature coefficient of the on-state voltage
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Application:
  • AC motor drives
  • Solar inverter
  • Medical equipment
  • Uninterruptible power supply
  • Air-conditioning systems
  • Welding equipment
  • Switched-mode and resonant-mode power supplies Package:
  • "ECO-PAC2" standard package
  • Easy to mount with two screws
  • Insulated base plate
  • Soldering pins for PCB mounting
  • Space and weight savings
  • Improved temperature and power cycling capability
  • High power density Part name (Marking on product) MIXA20W1200MC G10 H10 S18 G14 W18 I14 K14 K10

© 2011 IXYS All rights reserved 2 - 6 20110304b MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage TVJ = 25°C 1200 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 IC80 collector current TC = 25°C TC = 80°C A A P tot total power dissipation TC = 25°C 100 W VCE(sat) collector emitter saturation voltage IC = 16 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 1.8 2.1 2.1 V V V GE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25°C 5.5 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 0.02 0.2 0.2 mA mA I GES gate emitter leakage current VGE = ±20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A 47 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 125°C VCE = 600 V; IC = 15 A VGE = ±15 V; RG = 56 W 250 100 1.55 1.7 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 56 W; TVJ = 125°C VCEK = 1200 V 45 A SCSOA t SC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±15 V; TVJ = 125°C RG = 56 W; non-repetitive 60 10 µs A RthJC thermal resistance junction to case (per IGBT) 1.3 K/W Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C A A V F forward voltage IF = 20 A; VGE = 0 V TVJ = 25°C TVJ = 150°C 1.95 1.85 2.2 V V Q rr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -400 A/µs TVJ = 125°C IF = 20 A; VGE = 0 V 350 0.7 µC A ns mJ RthJC thermal resistance junction to case (per diode) 1.5 K/W TC = 25°C unless otherwise stated

© 2011 IXYS All rights reserved 3 - 6 20110304b MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. Module Ratings Symbol Definitions Conditions min. typ. max. Unit TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 -40 125 150 125 V ISOL isolation voltage IISOL < 1 mA; 50/60 Hz; t = 1 s 3600 V~ Md mounting torque (M5) 1.5 2 Nm dS dA creep distance on surface strike distance through air 11.2 11.2 mm mm Weight 24 g

© 2011 IXYS All rights reserved 4 - 6 20110304b MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. XXX XX-XXXXX YYCW Lot# Circuit Diagram Marking on product Date Code Logo Part number M = Module I = IGBT X = XPT A = Standard 20 = Current Rating [A] W = Six-Pack 1200 = Reverse Voltage [V] MC = ECO-PAC2 Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIXA20W1200MC MIXA20W1200MC Box 6 509537 Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394“) 26.4 19.5 16.4 5.5 2.6 4.5 4.5 4.5 2.6 26.4 25.9 12.9 0.5 1.3 6.9 11.3 15.3 21.2 24.1 2.6 31.6 34.3 A C E G I K JHFDB M O R T W L N P S V X Product Marking 1 1.5 31.6 8.3 4.3 20.3 G10 H10 S18 G14 W18 I14 K14 K10

© 2011 IXYS All rights reserved 5 - 6 20110304b MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. Inverter T1 - T6 0 1 2 3 0 5 10 15 20 25 30 35 0 1 2 3 4 5 VCE [V] IC [A] QG [nC] VGE [V] 9 V 11 V 5 6 7 8 9 10 11 12 13 0 10 20 30 40 50 60 13 V 40 60 80 100 120 140 160 1.2 1.6 2.0 2.4 2.8 E [mJ] Eon Fig. 1 Typ. output characteristics VCE [V] IC [A] VGE = 15 V 17 V 19 V Fig. 2 Typ. output characteristics IC [A] Fig. 3 Typ. tranfer characteristics VGE [V] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. switching energy vs. collector current Eoff Fig. 6 Typ. switching energy vs. gate resistance RG [Ω] E [mJ] IC [A] RG = 56 Ω VCE = 600 V VGE = ±15 V TVJ = 125°C Eon Eoff IC = 15 A VCE = 600 V VGE = ±15 V TVJ = 125°C IC = 15 A VCE = 600 V TVJ = 125°C TVJ = 25°C VGE = 15 V TVJ = 125°C TVJ = 125°C TVJ = 25°C

© 2011 IXYS All rights reserved 6 - 6 20110304b MIXA20W1200MC IXYS reserves the right to change limits, test conditions and dimensions. 200 300 400 500 600 700 Qrr [µC] IF [A] VF [V] diF /dt [A/µs] TVJ = 125°C TVJ = 25°C TVJ = 125°C VR = 600 V 10 A 20 A 40 A 200 300 400 500 600 700 IRR [A] diF /dt [A/µs] TVJ = 125°C VR = 600 V 10 A 20 A 40 A Fig. 9 Typ. peak reverse current IRM vs. di/dt 200 300 400 500 600 700 100 200 300 400 500 600 700 trr [ns] diF /dt [A/µs] 10 A 20 A 40 A TVJ = 125°C VR = 600 V Fig. 10 Typ. recovery time trr versus di/dt Fig. 11 Typ. recovery energy Erec versus di/dt 200 300 400 500 600 700 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Erec [mJ] diF /dt [A/µs] TVJ = 125°C VR = 600 V 10 A 20 A 40 A 0.001 0.01 0.1 1 10 0.01 0.1 tp [s] ZthJC [K/W] Fig. 12 Typ. transient thermal impedance Diode IGBT