MIXA100PM650TMI IXYS | Alldatasheet

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Technical content

Phase leg with Multi Level XPT IGBT Module U N E1 G1E2 G2E3 G3E4 G4 Th1 Th2 Part number MIXA100PM650TMI Backside: isolated C25 CE(sat)VV 1.6 CES 150 650 V= V I= A Features / Advantages: Applications: Package:

  • High level of integration
  • Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - low EMI - square RBSOA @ 3x Ic
  • Thin wafer technology combined with the XPT design results in a competitive low VCE(sat)
  • Temperature sense included
  • SONIC™ diode - fast and soft reverse recovery - low operating forward voltage
  • AC motor drives
  • Pumps, Fans
  • Washing machines
  • Air-conditioning system
  • Inverter and power supplies MiniPack2B
  • Compatible to EASY2B package
  • Pins for pressfit connection
  • With DCB base
  • Isolation Voltage: V~3000 IXYS reserves the right to change limits, conditions and dimensions. 20140129Data according to IEC 60747and per semiconductor unless otherwise specified © 2014 IXYS all rights reserved

-di /dt = A/µs T = °C VCES V650collector emitter voltage collector emitter saturation voltage T = 25°Ccollector current A150 A C VJ Symbol Definition Ratings typ. max.min.Conditions Unit 100 VVCE(sat) total power dissipation 330 W collector emitter leakage current 5.5 V turn-on delay time 50 nst reverse bias safe operating area A VGES V±20 VGEM max. transient gate emitter voltage T = °CC V Ptot gate emitter threshold voltage RBSOA 100 ±30 T = °C T = °CVJ V max. DC gate voltage IC25 IC T = 25°CVJ I = A; V = 15 VCG E T = 25°CVJ VGE(th) ICES I = mA; V = VCG E C E V = V ; V = 0 VCE CES GE IGES T = 25°CVJ gate emitter leakage current V = ±20 VGE 1.8 1.85 4.84 mA 0.1 mA 0.1 300 G(on) total gate charge V = V; V = 15 V; I = ACEQ GE C 140 nC t t t E E d(on) r d(off) f on off 70 ns 150 ns 80 ns 1.8 mJ 3.9 mJ current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load V = V; I = A V = ±15 V; R = Ω CE C GE G V = ±15 V; R = ΩGE G V = VCEmax 650 short circuit safe operating area µs SCSOA 10T = °CVJV = V; V = ±15 VCE GEshort circuit durationt short circuit currentI SC SC R = Ω; non-repetitiveG 400 A RthJC thermal resistance junction to case 0.45 K/W VRRM V650max. repetitive reverse voltage T = 25°CVJ T = 25°Cforward current A130 A C 100T = °CC IF25 IF T = 25°Cforward voltage V1.85 V VJ 1.70T = 125°CVJ VF I = AF T = 25°Creverse current mA0.2 mA VJ 1T = 125°CVJ IR R RRM T = 125°CVJ Q I t rr RM rr 7.5 µC 90 A 100 ns reverse recovery charge max. reverse recovery current reverse recovery time V = I = A; V = 0 V F FG E Erec 1.7 mJreverse recovery energy R RthJC thermal resistance junction to case 0.6 K/W V = V T = 25°CC T = 25°CVJ T = °CVJ VJ 100 1.6 100 100 100 100 8.2 8.2 8.2 300 400 1600 300 I CM 1.6 RthCH thermal resistance case to heatsink 0.13 K/W RthCH thermal resistance case to heatsink 0.2 K/W IGBT Diode 300 V V = VCEmax 400 8080 8080 125 125 125 125 125 nA IXYS reserves the right to change limits, conditions and dimensions. 20140129Data according to IEC 60747and per semiconductor unless otherwise specified © 2014 IXYS all rights reserved

Tvjm max. virtual junction temperature °C175 Ratings XXXXXXXXXXX Logo Part number Date Code 2D Data Matrix Location yywwx I X M A 100 PM 650 T MI Part number IGBT XPT IGBT Gen 1 / std Phase leg with Multi Level Thermistor \\ Temperature sensor MiniPack2B Module Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm2.2mounting torque 2 TVJ °C150virtual junction temperature -40 Weight g39 Symbol Definition typ. max.min.Conditions operation temperature Unit V Vt = 1 second Vt = 1 minute isolation voltage mm mm 6.3 5.0 11.5 10.0 dSpp/App creepage distance on surface | striking distance through air dSpb/Apb terminal to backside I RMS RMS current Aper terminal 125-40 terminal to terminal MiniPack2B Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering 0 25 50 75 100 125 150 102 103 104 105 R [ ] Typ. NTC resistance vs. temperature TC [°C] 50/60 Hz, RMS; I ≤ 1 mAISOL MIXA100PM650TMI 511485Box 20MIXA100PM650TMIStandard Rpin-chip resistance pin to chip 6m Ω 3000ISOL V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF Tstg °C125storage temperature -40 2500 threshold voltage V mΩ V0 max R0 max slope resistance * 1.1 1.2 Equivalent Circuits for Simulation T =VJ I V0 R0 IGBT Diode 150 °C* on die level T = 25°resistance kΩ5.25 K VJ 3375 R25 B25/50 54.75 temperature coefficient Symbol Definition typ. max.min.Conditions Unit Temperature Sensor NTC IXYS reserves the right to change limits, conditions and dimensions. 20140129Data according to IEC 60747and per semiconductor unless otherwise specified © 2014 IXYS all rights reserved

Pin positions with tolerance Ø 0.4 28.8 25.6 12.8 6.4 3.2 3.2 9.6 12.8 19.2 22.4 25.6 28.8 38.4 41.6 44.8 E4 G4 N N N N NN UU UU UUUUE3' 56.7 ±0.3 22.7 ±0.5 16.4±0.2 48 ±0.3 53 ±0.1 62.8 ±0.5 42 ±0.15 51 ±0.1 16.4 ±0.5 1.4 ±0.5 12 ±0.35 U N E1 G1E2 G2E3 G3E4 G4 Th1 Th2 Outlines MiniPack2B IXYS reserves the right to change limits, conditions and dimensions. 20140129Data according to IEC 60747and per semiconductor unless otherwise specified © 2014 IXYS all rights reserved