MIEB101H1200EH IXYS | Alldatasheet

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© 2011 IXYS All rights reserved 1 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE(sat) = 1.8 V Features:

  • SPT+ IGBT technology
  • low saturation voltage
  • low switching losses
  • square RBSOA, no latch up
  • high short circuit capability
  • positive temperature coefficient for easy parallelling
  • MOS input, voltage controlled
  • SONIC™ free wheeling diode - fast and soft reverse recovery - low operation forward voltage
  • solderable pins for PCB mounting
  • package with copper base plate Application:
  • AC motor drives
  • Solar inverter
  • Medical equipment
  • Uninterruptible power supply
  • Air-conditioning systems
  • Welding equipment
  • Switched-mode and resonant-mode power supplies Package:
  • "E3-Pack" standard outline
  • Insulated copper base plate
  • Soldering pins for PCB mounting Part name (Marking on product) MIEB101H1200EH E72873 13, 21 14, 20

© 2011 IXYS All rights reserved 2 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. Output Inverter D1 - D4 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ = 25°C 1200 V IF25 IF80 forward current TC = 25°C TC = 80°C 135 A A VF forward voltage (on chip level)  IF = 100 A; VGE = 0 V TVJ = 25°C TVJ = 125°C 2.00 1.95 2.20 2.25 V V I rr trr Qrr Erec max. reverse recovery current reverse recovery time inductive load VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 10 W TVJ = 125°C LS = 70 nH 120 330 12.5 4.2 A ns µC mJ R thJC thermal resistance junction to case (per diode) 0.4 K/W Ouput Inverter T1 - T4 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage TVJ = 25°C 1200 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 IC80 collector current TC = 25°C TC = 80°C 183 128 A A P tot total power dissipation TC = 25°C 630 W VCE(sat) collector emitter saturation voltage (on chip level)  IC = 100 A; VGE = 15 V TVJ = 25°C TVJ = 125°C 1.8 2.0 2.2 2.4 V V V GE(th) gate emitter threshold voltage IC = 4 mA; VGE = VCE TVJ = 25°C 5 6 7 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 125°C 0.9 0.3 mA mA I GES gate emitter leakage current VGE = ±20 V 200 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 7430 pF QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 100 A 750 nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off inductive load TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 10 W LS = 70 nH 120 460 240 9.5 9.7 4.2 ns ns ns ns mJ mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 10 W; TVJ = 125°C VCEK = 1200 V 200 A SCSOA t SC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = ±10 V; TVJ = 125°C RG = 3.9 W; non-repetitive 10 µs RthJC thermal resistance junction to case (per IGBT) 0.2 K/W TC = 25°C unless otherwise stated

© 2011 IXYS All rights reserved 3 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. Module Ratings Symbol Definitions Conditions min. typ. max. Unit TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 -40 125 150 125 V ISOL isolation voltage IISOL < 1 mA; 50/60 Hz t = 1 min t = 1 s 3000 3600 CTI comparative tracking index 200 Md mounting torque (M5) 3 6 Nm Rpin to chip see  1.8 mW dS dA creep distance on surface strike distance through air 12.7 9.6 mm mm RthCH thermal resistance case to heatsink with heatsink compound 0.1 K/W Weight 300 g  VCE = VCE(sat) + 2x Rpin to chip · IC TC = 25°C unless otherwise stated Curves are measured on modul level except Fig. 14 to Fig. 17

© 2011 IXYS All rights reserved 4 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. XXX XX-XXXXX YYCWx Part name Date Code Logo Prod.Index 2D Data Matrix FOSS-ID 6 digits Part number M = Module I = IGBT E = SPT B = 2nd Generation 101 = Current Rating [A] H = H~ Bridge 1200 = Reverse Voltage [V] EH = E3-Pack Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIEB101H1200EH MIEB101H1200EH Box 5 510534 Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394“) Product Marking Remark: Dimensions without tolerances acc. DIN ISO 2768-T1-m 13, 21 14, 20

© 2011 IXYS All rights reserved 5 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. Transistor T1 - T4 0 1 2 3 4 5 100 150 200 250 300 0 20 40 60 80 100 120 140 160 180 200 100 125 150 0 1 2 3 4 5 100 150 200 250 300 VCE [V] IC [A] Q G [nC] VGE [V] 9 V 11 V 5 6 7 8 9 10 11 12 13 100 150 200 250 0 200 400 600 800 1000 T VJ = 25°C T VJ = 125°C T VJ = 25°C T VJ = 125°C 13 V 0 20 40 60 80 100 120 140 160 180 200 100 200 300 400 500 600 E [mJ] t d(off) Fig. 1 Typ. output characteristics VCE [V] IC [A] V GE = 15 V 17 V 19 V Fig. 2 Typ. output characteristics IC [A] Fig. 3 Typ. tran s fer characteristics VGE [V] Fig. 4 Typ. turn-on gate charge Fig. 5 Typ. turn-on energy & switching times versus collector current t f Fig. 6 Typ. turn-off energy & switching times versus collector current I C [A] E [mJ] IC [A] R G = 10 Ω V CE = 600 V V GE = ±15 V T VJ = 125°C V GE = 15 V T VJ = 125°C I C = 100 A V CE = 600 V t [ns] t d(on) t r R G = 10 Ω V CE = 600 V V GE = ±15 V T VJ = 125°C t [ns] E off E rec(off) E on

© 2011 IXYS All rights reserved 6 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. 0 5 10 15 20 25 30 35 200 400 600 800 1000 1200 0 5 10 15 20 25 30 35 100 150 200 E [mJ] E [mJ] RG [Ω] E off Fig. 7 Typ. turn-on energy and switching times versus gate resistor Fig. 8 Typ. turn-off energy and switching times versus gate resistor IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C t [ns] RG [Ω] t d(off) t f IC = 100 A VCE = 600 V VGE = ±15 V TVJ = 125°C t [ns] E rec(o ff ) t d (on) E on t r Transistor T1 - T4

© 2011 IXYS All rights reserved 7 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. Diode D1 - D4 100 150 200 250 300 IF [A] V F [V] Fig. 9 Typ. forward characteristics 1000 1500 2000 2500 3000 100 150 200 250 300 100 200 300 400 500 600 Irr [A] diF /dt [A/µs] 33 Ω Fig. 10 Typ. reverse recovery characteristics Fig. 11 Typ. reverse recovery characteristics 0 25 50 75 100 125 150 175 200 225 100 125 150 175 200 Irr [A] IF [A] I rr 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 tp [s] ZthJC [K/W] Fig. 12 Typ. transient thermal impedance IGBT Diode trr [ns] I F = 100 A V r = 600 V T VJ = 125°C 22 Ω 10 Ω 3.3 Ω Q rr R g = 10 Ω V r = 600 V T VJ = 125°C Q rr [µC] t rr I rr 10 Ω 22 Ω 33 Ω T VJ = 125°C T VJ = 25°C R G = IGBT FRD R i τi R i τi 0.003 0.00001 0.015 0.0005 0.010 0.0014 0.04 0.006 0.057 0.021 0.09 0.025 0.130 0.1 0.255 0.125 Fig. 13 Thermal coefficients

© 2011 IXYS All rights reserved 8 - 8 20110615a MIEB 101H1200EH IXYS reserves the right to change limits, test conditions and dimensions. 1000 1200 1400 1600 1800 2000 2200 Q rr [µC] diF /dt [A/µs] TVJ = 125°C VR = 600 V 50 A 100 A 200 A Fig. 14 Typ. reverse recov.charge Q rr vs. di/dt 1000 1200 1400 1600 1800 2000 2200 100 200 300 400 500 600 700 trr [ns] diF /dt [A/µs] 200 A 50 A 100 A TVJ = 125°C VR = 600 V Fig. 16 Typ. recovery time t rr versus di/dt Fig. 15 Typ. peak reverse current I RM vs. di/dt diF /dt [A/µs] 1000 1200 1400 1600 1800 2000 2200 100 120 140 160 Irr [A] TVJ = 125°C VR = 600 V 200 A 50 A 100 A Fig. 17 Typ. recovery energy E rec versus di/dt E rec [mJ] diF /dt [A/µs] 200 A 50 A 100 A 1000 1200 1400 1600 1800 2000 2200 TVJ = 125°C VR = 600 V Diode D1 - D4