MID550-12A4 IXYS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 4
Technical content
Features
G switching frequency up to 30 kHz G square RBSOA, no latch up G high short circuit capability G positive temperature coefficient for easy parallelling G MOS input, voltage controlled G ultra fast free wheeling diodes G package with DCB ceramic base plate G isolation voltage 4800 V G UL registered E72873 Advantages G space and weight savings G reduced protection circuits Typical Applications G AC and DC motor control G power supplies G welding inverters Short Circuit SOA Capability Square RBSOA MID 550-12 A4 MDI 550-12 A4 1 2 3 E 72873 MID MDI IGBT Modules /G129 Additional current limitation by external leads 030
© 2000 IXYS All rights reserved 2 - 4 Symbol Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. V(BR)CES VGE = 0 V 1200 V VGE(th) IC = 16 mA, VCE = VGE 4.5 6.5 V ICES VCE = VCES TJ = 25/G176C2 1 m A TJ = 125/G176C3 0 m A IGES VCE = 0 V, VGE = /G17720 V 1.6 µA VCE(sat) IC = 400 A, VGE = 15 V 2.3 2.8 V C ies 26 nF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 4 nF C res 2n F td(on) 100 ns tr 60 ns td(off) 600 ns tf 90 ns Eon 64 mJ Eoff 59 mJ R thJC 0.05 K/W R thJS with heatsink compound 0.09 K/W Free Wheeling Diode (FRED) Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. VF IF = 400 A, VGE = 0 V 2.4 2.6 V IF = 400 A, VGE = 0 V, TJ = 125/G176C 1.9 2.0 V IF TC = 25/G176C /G129 750 A TC = 80/G176C 460 A IRM IF = 400 A, VGE = 0 V, -diF/dt = 3000 A//G109s 300 A trr TJ = 125/G176C, VR = 600 V 200 ns R thJC 0.09 K/W R thJS 0.18 K/W Anti Parallel Diode (FRED) Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. VF IF = 100 A, VGE = 0 V 2.4 2.6 V IF = 100 A, VGE = 0 V, TJ = 125/G176C 1.9 2.0 V IF TC = 25/G176C 150 A TC = 80/G176C9 5 A IRM IF = 100 A, VGE = 0 V, -diF/dt = 600 A//G109s6 2 A trr TJ = 125/G176C, VR = 600 V 200 ns R thJC 0.45 K/W R thJS 0.9 K/W Inductive load, TJ = 125/G176C IC = 400 A, VGE = ±15 V VCE = 600 V, RG = 1.8 /G87 MID 550-12 A4 MDI 550-12 A4 Dimensions in mm (1 mm = 0.0394") /G129 Additional current limitation by external leads /G69/G113/G117/G105/G118/G97/G108/G101/G110/G116/G32/G67/G105/G114/G99/G117/G105/G116/G115/G32/G102/G111/G114/G32/G83/G105/G109/G117/G108/G97/G116/G105/G111/G110 /G67/G111/G110/G100/G117/G99/G116/G105/G111/G110 /G73/G71/G66/G84/G32/G40/G116/G121/G112/G46/G32/G97/G116/G32/G86/G71/G69/G32/G61/G32/G49/G53/G32/G86/G59/G32/G84/G74/G32/G61/G32/G49/G50/G53/G176/G67/G41 /G86/G48/G32/G61/G32/G49/G46/G51/G32/G86/G59/G32/G82/G48/G32/G61/G32/G51/G46/G50/G32/G109/G87 /G70/G114/G101/G101/G32/G87/G104/G101/G101/G108/G105/G110/G103/G32/G68/G105/G111/G100/G101/G32/G40/G116/G121/G112/G46/G32/G97/G116/G32/G84/G74/G32/G61/G32/G49/G50/G53/G176/G67/G41 /G86/G48/G32/G61/G32/G49/G46/G51/G32/G86/G59/G32/G82/G48/G32/G61/G32/G49/G46/G53/G32/G109/G87 /G84/G104/G101/G114/G109/G97/G108/G32/G82/G101/G115/G112/G111/G110/G115/G101 /G73/G71/G66/G84/G32/G40/G116/G121/G112/G46/G41 /G67/G116/G104/G49/G32/G61/G32/G48/G46/G57/G48/G32/G74/G47/G75/G59/G32/G82/G116/G104/G49/G32/G61/G32/G48/G46/G48/G52/G57/G32/G75/G47/G87 /G67/G116/G104/G50/G32/G61/G32/G50/G46/G48/G55/G32/G74/G47/G75/G59/G32/G82/G116/G104/G50/G32/G61/G32/G48/G46/G48/G48/G49/G32/G75/G47/G87 /G70/G114/G101/G101/G32/G87/G104/G101/G101/G108/G105/G110/G103/G32/G68/G105/G111/G100/G101/G32/G40/G116/G121/G112/G46/G41 /G67/G116/G104/G49/G32/G61/G32/G48/G46/G55/G49/G32/G74/G47/G75/G59/G32/G82/G116/G104/G49/G32/G61/G32/G48/G46/G48/G57/G48/G32/G75/G47/G87 /G67/G116/G104/G50/G32/G61/G32/G49/G46/G51/G48/G32/G74/G47/G75/G59/G32/G82/G116/G104/G50/G32/G61/G32/G48/G46/G48/G48/G50/G32/G75/G47/G87
© 2000 IXYS All rights reserved 3 - 4 0 200 400 600 800 1000 120 100 200 300 01234 200 400 600 800 1000 1200 1400 1600 100 200 300 400 500 600 700 800 900 0 500 1000 1500 2000 100 200 300 400 500 600 700 800 900 13V 11V TJ = 25°C VGE =17VTJ = 125°C VCE = 600V IC = 400A 15V 56789 1 0 1 1 100 200 300 400 500 600 700 800 13V 11V VGE =17V 15V VCE = 20V TJ = 25°C TJ = 25°C TJ = 125°C VCE V A IC VCE A IC V VV VGE VF A IC A IF nC Q G -di/dt V VGE A IRM trr ns A//c109 s 550-12 TJ = 125°C VR = 600V IF = 400AIRM trr Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics MID 550-12 A4 MDI 550-12 A4
© 2000 IXYS All rights reserved 4 - 4 0 200 400 600 800 1000 120 160 120 160 0 200 400 600 800 1000 120 160 200 400 600 800 0.00001 0.0001 0.001 0.01 0.1 02468 1 0 1 2 1 4 100 400 800 1200 1600 2000 02468 1 0 1 2 1 4 120 160 200 160 240 320 400 single pulse VCE = 600V VGE = ±15V R G = 1.8/c87 TJ = 125°C 550-12 VCE = 600V VGE = ±15V IC = 400A TJ = 125°C 0 200 400 600 800 1000 1200 200 400 600 800 1000 R G = 1.8/c87 TJ = 125°C VCEK < VCES VCE = 600V VGE = ±15V R G = 1.8/c87 TJ = 125°C Eon VCE = 600V VGE = ±15V IC = 400A TJ = 125°C td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A mJ Eoff mJ Eon ns t ns t RG /c87 RG /c87 VCE t s mJ Eon mJ Eoff ns t ns t K/W ZthJC IGBTdiode ICM V A Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA MID 550-12 A4 MDI 550-12 A4