MII400-12E4 IXYS | Alldatasheet

Document overview

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Technical content

Features

 IGBT - low saturation voltage - positive temperature coefficient - fast switching - short tail current for optimized performance in resonant circuits  HiPerFRED TM diodes - fast and soft reverse recovery - low operating forward voltage - low leakage current  Package - low inductive current path - screw connection to high current main terminals - use of non interchangeable connectors for auxiliary terminals possible - kelvin emitter terminal for easy drive - isolated ceramic base plate

Applications

 drives -A C -D C  power supplies - rectifiers with power factor correction and recuperation capability - UPS MII 400-12E4 MID 400-12E4 MDI 400-12E4 I C25 = 420 A VCES = 1200 V VCE(sat) typ.= 2.2 V 225 IGBTs T1-T2 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 420 A IC80 TC = 80°C 300 A ICM VGE = ±15 V; RG = 4.7 Ω ; TVJ = 125°C 450 A VCEK RBSOA , Clamped inductive load; L = 100 µH V CES tSC VCE = 900 V; VGE = ±15 V; RG = 4.7 Ω ; TVJ = 125°C 10 µs (SCSOA) non repetitive Ptot TC = 25°C 1700 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 300 A; VGE = 15 V; TVJ = 25°C 2.2 2.8 V TVJ = 125°C 2.6 V VGE(th) IC = 10 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES ; VGE = 0 V; TVJ = 25°C 0.8 3.3 mA TVJ = 125°C 3.5 mA IGES VCE = 0 V; VGE = ± 20 V 600 nA td(on) 150 ns tr 60 ns td(off) 680 ns tf 50 ns Eon 36 mJ Eoff 30 mJ C ies VCE = 25 V; VGE = 0 V; f = 1 MHz 17 nF Q Gon VCE = 600 V; VGE = 15 V; IC = 300 A 2.25 µC R thJC (per IGBT) 0.08 K/W R thJH with heatsink compound 0.15 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 300 A VGE = ±15 V; RG = 4.7 Ω D12 D11 Preliminary MII MID MDI

© 2002 IXYS All rights reserved 2 - 2 MII 400-12E4 MID 400-12E4 MDI 400-12E4 Dimensions in mm (1 mm = 0.0394") Optional accessories for modules keyed twin plugs (UL758, style 1385, CSA class 5851, guide 460-1-1)  Type ZY180L with wire length 350mm – for pins 4 (yellow wire) and 5 (red wire) – for pins 11 (yellow wire) and 10 (red wire)  Type ZY180R with wire length 350mm – for pins 7 (yellow wire) and 6 (red wire) – for pins 8 (yellow wire) and 9 (red wire) Free wheeling diodes D1-D2 Symbol Conditions Maximum Ratings IF25 TC = 25°C 450 A IF80 TC = 80°C 290 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 300 A; VGE = 0 V; TVJ = 25°C 2.3 2.7 V TVJ = 125°C 1.7 V IRM IF = 225 A; diF/dt = -2000 A/µs; TVJ = 125°C 240 A trr VR = 600 V; VGE = 0 V 220 ns R thJC (per diode) 0.15 K/W R thJH with heatsink compound 0.3 K/W Module Symbol Conditions Maximum Ratings T VJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 4000 V~ M d Mounting torque (module, M6) 2.25 - 2.75 Nm (terminals, M6) 4.5 - 5.5 Nm Symbol Conditions Characteristic Values min. typ. max. dS Creepage distance on surface 2 mm dA Strike distance in air 2 mm Weight 250 g Chopper anti parallel diodes D11-D12 Symbol Conditions Maximum Ratings IF25 TC = 25°C 150 A IF80 TC = 80°C 95 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C 2.3 2.7 V TVJ = 125°C 1.7 V IRM IF = 75 A; diF/dt = -750 A/µs; TVJ = 125°C 80 A trr VR = 600 V; VGE = 0 V 220 ns R thJC (per diode) 0.45 K/W R thJH with heatsink compound 0.9 K/W