MID200-12A4

MII200-12A4 IXYS | Alldatasheet

Document overview

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Technical content

Features

G switching frequency up to 30 kHz G square RBSOA, no latch up G high short circuit capability G positive temperature coefficient for easy parallelling G MOS input, voltage controlled G ultra fast free wheeling diodes G package with DCB ceramic base plate G isolation voltage 4800 V G UL registered E72873 Advantages G space and weight savings G reduced protection circuits Typical Applications G AC and DC motor control G AC servo and robot drives G power supplies G welding inverters 030

© 2000 IXYS All rights reserved 2 - 4 MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 Symbol Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. V(BR)CES VGE = 0 V 1200 V VGE(th) IC = 6 mA, VCE = VGE 4.5 6.5 V ICES VCE = VCES TJ = 25/G176C1 0 m A TJ = 125/G176C1 5 m A IGES VCE = 0 V, VGE = /G17720 V /G177700 nA VCE(sat) IC = 150 A, VGE = 15 V 2.2 2.7 V C ies 11 nF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 1.5 nF C res 0.65 nF td(on) 100 ns tr 50 ns td(off) 650 ns tf 50 ns Eon 24.2 mJ Eoff 21 mJ R thJC 0.11 K/W R thJS with heatsink compound 0.22 K/W Reverse Diode (FRED) Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. VF IF = 150 A, VGE = 0 V, 2.2 2.5 V IF = 150 A, VGE = 0 V, TJ = 125/G176C 1.8 1.9 V IF TC = 25/G176C 300 A TC = 80/G176C 200 A IRM IF = 150 A, VGE = 0 V, -diF/dt = 1200 A//G109s 125 A trr TJ = 125/G176C, VR = 600 V 200 ns R thJC 0.23 K/W R thJS with heatsink compound 0.45 K/W Inductive load, TJ = 125/G176C IC = 150 A, VGE = ±15 V VCE = 600 V, RG = 6.8 /G87 Dimensions in mm (1 mm = 0.0394") /G69/G113/G117/G105/G118/G97/G108/G101/G110/G116/G32/G67/G105/G114/G99/G117/G105/G116/G115/G32/G102/G111/G114/G32/G83/G105/G109/G117/G108/G97/G116/G105/G111/G110 /G67/G111/G110/G100/G117/G99/G116/G105/G111/G110 /G73/G71/G66/G84/G32/G40/G116/G121/G112/G46/G32/G97/G116/G32/G86/G71/G69/G32/G61/G32/G49/G53/G32/G86/G59/G32/G84/G74/G32/G61/G32/G49/G50/G53/G176/G67/G41 /G86/G48/G32/G61/G32/G49/G46/G53/G32/G86/G59/G32/G82/G48/G32/G61/G32/G55/G46/G48/G32/G109/G87 /G70/G114/G101/G101/G32/G87/G104/G101/G101/G108/G105/G110/G103/G32/G68/G105/G111/G100/G101/G32/G40/G116/G121/G112/G46/G32/G97/G116/G32/G84/G74/G32/G61/G32/G49/G50/G53/G176/G67/G41 /G86/G48/G32/G61/G32/G49/G46/G51/G32/G86/G59/G32/G82/G48/G32/G61/G32/G51/G46/G52/G32/G109/G87 /G84/G104/G101/G114/G109/G97/G108/G32/G82/G101/G115/G112/G111/G110/G115/G101 /G73/G71/G66/G84/G32/G40/G116/G121/G112/G46/G41 /G67/G116/G104/G49/G32/G61/G32/G48/G46/G52/G48/G32/G74/G47/G75/G59/G32/G82/G116/G104/G49/G32/G61/G32/G48/G46/G49/G49/G48/G32/G75/G47/G87 /G67/G116/G104/G50/G32/G61/G32/G48/G46/G57/G51/G32/G74/G47/G75/G59/G32/G82/G116/G104/G50/G32/G61/G32/G48/G46/G48/G48/G51/G32/G75/G47/G87 /G70/G114/G101/G101/G32/G87/G104/G101/G101/G108/G105/G110/G103/G32/G68/G105/G111/G100/G101/G32/G40/G116/G121/G112/G46/G41 /G67/G116/G104/G49/G32/G61/G32/G48/G46/G50/G56/G32/G74/G47/G75/G59/G32/G82/G116/G104/G49/G32/G61/G32/G48/G46/G50/G50/G54/G32/G75/G47/G87 /G67/G116/G104/G50/G32/G61/G32/G48/G46/G53/G49/G32/G74/G47/G75/G59/G32/G82/G116/G104/G50/G32/G61/G32/G48/G46/G48/G48/G53/G32/G75/G47/G87

© 2000 IXYS All rights reserved 3 - 4 0 200 400 600 800 1000 100 100 150 200 250 01234 100 200 300 400 500 600 100 150 200 250 300 350 0 200 400 600 800 100 150 200 250 300 350 13V 11V TJ = 25°C VGE =17VTJ = 125°C VCE = 600V IC = 150A 15V 56789 1 0 1 1 100 150 200 250 300 350 13V 11V VGE =17V 15V VCE = 20V TJ = 25°C VCE V A IC VCE A IC V VV VGE VF A IC A IF nC Q G -di/dt V VGE A IRM trr ns A//c109 s 200-12 TJ = 125°C VR = 600V IF = 150A TJ = 25°C TJ = 125°C IRM trr Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 0 100 200 300 120 0 100 200 300 200 400 600 800 0.00001 0.0001 0.001 0.01 0.1 0 4 8 1 21 62 02 42 8 400 800 1200 1600 2000 0 4 8 12 16 20 24 28 120 160 200 single pulse VCE = 600V VGE = ±15V R G = 6.8/c87 TJ = 125°C 200-12 VCE = 600V VGE = ±15V IC = 150A TJ = 125°C 0 200 400 600 800 1000 1200 100 200 300 400 R G = 6.8/c87 TJ = 125°C VCEK < VCES VCE = 600V VGE = ±15V R G = 6.8/c87 TJ = 125°C Eon VCE = 600V VGE = ±15V IC = 150A TJ = 125°C td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A mJ Eoff mJ Eon ns t ns t RG /c87 RG /c87 VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBTdiode V A MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4