MID145-12A3

MII145-12A3 IXYS | Alldatasheet

Document overview

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Technical content

Features

G switching frequency up to 30 kHz G square RBSOA, no latch up G high short circuit capability G positive temperature coefficient for easy parallelling G MOS input, voltage controlled G ultra fast free wheeling diodes G package with DCB ceramic base plate G isolation voltage 4800 V G UL registered E72873 Advantages G space and weight savings G reduced protection circuits Typical Applications G AC and DC motor control G AC servo and robot drives G power supplies G welding inverters IC25 = 160 A VCES = 1200 V VCE(sat) typ.= 2.2 V 030

© 2000 IXYS All rights reserved 2 - 4 MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3 Symbol Conditions Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. V(BR)CES VGE = 0 V 1200 V VGE(th) IC = 4 mA, VCE = VGE 4.5 6.5 V ICES VCE = VCES TJ = 25/G176C6 m A TJ = 125/G176C9 m A IGES VCE = 0 V, VGE = /G17720 V /G177400 nA VCE(sat) IC = 100 A, VGE = 15 V 2.2 2.7 V C ies 6.5 nF C oes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 nF C res 0.5 nF td(on) 100 ns tr 60 ns td(off) 600 ns tf 90 ns Eon 16 mJ Eoff 15 mJ R thJC 0.18 K/W R thJS with heatsink compound 0.36 K/W Reverse Diode (FRED) Characteristic Values (TJ = 25/G176C, unless otherwise specified) min. typ. max. VF IF = 100 A, VGE = 0 V, 2.4 2.6 V IF = 100 A, VGE = 0 V, TJ = 125/G176C 1.9 2.0 V IF TC = 25/G176C 150 A TC = 80/G176C9 5 A IRM IF = 100 A, VGE = 0 V, -diF/dt = 600 A//G109s6 2 A trr TJ = 125/G176C, VR = 600 V 200 ns R thJC 0.45 K/W R thJS with heatsink compound 0.9 K/W Inductive load, TJ = 125/G176C IC = 100 A, VGE = ±15 V VCE = 600 V, RG = 6.8 /G87 Dimensions in mm (1 mm = 0.0394") /G69/G113/G117/G105/G118/G97/G108/G101/G110/G116/G32/G67/G105/G114/G99/G117/G105/G116/G115/G32/G102/G111/G114/G32/G83/G105/G109/G117/G108/G97/G116/G105/G111/G110 /G67/G111/G110/G100/G117/G99/G116/G105/G111/G110 /G73/G71/G66/G84/G32/G40/G116/G121/G112/G46/G32/G97/G116/G32/G86/G71/G69/G32/G61/G32/G49/G53/G32/G86/G59/G32/G84/G74/G32/G61/G32/G49/G50/G53/G176/G67/G41 /G86/G48/G32/G61/G32/G49/G46/G51/G32/G86/G59/G32/G82/G48/G32/G61/G32/G49/G50/G46/G48/G32/G109/G87 /G70/G114/G101/G101/G32/G87/G104/G101/G101/G108/G105/G110/G103/G32/G68/G105/G111/G100/G101/G32/G40/G116/G121/G112/G46/G32/G97/G116/G32/G84/G74/G32/G61/G32/G49/G50/G53/G176/G67/G41 /G86/G48/G32/G61/G32/G49/G46/G51/G32/G86/G59/G32/G82/G48/G32/G61/G32/G54/G46/G53/G32/G109/G87 /G84/G104/G101/G114/G109/G97/G108/G32/G82/G101/G115/G112/G111/G110/G115/G101 /G73/G71/G66/G84/G32/G40/G116/G121/G112/G46/G41 /G67/G116/G104/G49/G32/G61/G32/G48/G46/G50/G53/G32/G74/G47/G75/G59/G32/G82/G116/G104/G49/G32/G61/G32/G48/G46/G49/G55/G53/G32/G75/G47/G87 /G67/G116/G104/G50/G32/G61/G32/G48/G46/G53/G56/G32/G74/G47/G75/G59/G32/G82/G116/G104/G50/G32/G61/G32/G48/G46/G48/G48/G52/G32/G75/G47/G87 /G70/G114/G101/G101/G32/G87/G104/G101/G101/G108/G105/G110/G103/G32/G68/G105/G111/G100/G101/G32/G40/G116/G121/G112/G46/G41 /G67/G116/G104/G49/G32/G61/G32/G48/G46/G49/G52/G32/G74/G47/G75/G59/G32/G82/G116/G104/G49/G32/G61/G32/G48/G46/G52/G52/G51/G32/G75/G47/G87 /G67/G116/G104/G50/G32/G61/G32/G48/G46/G50/G54/G32/G74/G47/G75/G59/G32/G82/G116/G104/G50/G32/G61/G32/G48/G46/G48/G48/G57/G32/G75/G47/G87

© 2000 IXYS All rights reserved 3 - 4 0 200 400 600 800 1000 120 100 200 300 01234 100 150 200 250 300 100 150 200 250 0 100 200 300 400 500 100 150 200 250 13V 11V TJ = 25°C VGE =17VTJ = 125°C VCE = 600V IC = 100A 15V 56789 1 0 1 1 100 150 200 250 13V 11V VGE =17V 15V VCE = 20V TJ = 25°C VCE V A IC VCE A IC V VV VGE VF A IC A IF nC Q G -di/dt V VGE A IRM trr ns A//c109 s 145-12 TJ = 125°C VR = 600V IF = 100A TJ = 25°C TJ = 125°C IRM trr Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA 0 50 100 150 200 120 0 50 100 150 200 200 400 600 800 0.00001 0.0001 0.001 0.01 0.1 0 8 16 24 32 40 48 56 300 600 900 1200 1500 0 8 16 24 32 40 48 56 120 180 240 300 single pulse VCE = 600V VGE = ±15V R G = 6.8/c87 TJ = 125°C 145-12 VCE = 600V VGE = ±15V IC = 100A TJ = 125°C 0 200 400 600 800 1000 1200 120 160 200 240 R G = 6.8/c87 TJ = 125°C VCEK < VCES VCE = 600V VGE = ±15V R G = 6.8/c87 TJ = 125°C Eon VCE = 600V VGE = ±15V IC = 100A TJ = 125°C td(on) tr Eoff td(off) tf Eon td(on) tr Eoff td(off) tf IC A IC A mJ Eoff mJ Eon ns t ns t RG /c87 RG /c87 VCE t s mJ Eon mJ Eoff ns t ns t ICM K/W ZthJC IGBTdiode V A MII 145-12 A3 MID 145-12 A3 MDI 145-12 A3