MIAA20WB600TMH IXYS | Alldatasheet

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© 2009 IXYS All rights reserved 1 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 600 V VCES = 600 V IDAVM25 = 90 A IC25 = 29 A IC25 = 29 A IFSM = 270 A VCE(sat) = 2.1 V VCE(sat) = 2.1 V Pin configuration see outlines. Features:

  • High level of integration - only one power semiconductor module required for the whole drive
  • Inverter with NPT IGBTs - low saturation voltage - positive temperature coefficient - fast switching - short tail current
  • Epitaxial free wheeling diodes with hiperfast soft reverse recovery
  • Temperature sense included Application:
  • AC motor drives
  • Pumps, Fans
  • Washing machines
  • Air-conditioning system
  • Inverter and power supplies Package:
  • "Mini" package
  • Assembly height is 17 mm
  • Insulated base plate
  • Pins suitable for wave soldering and PCB mounting
  • Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp
  • UL registered E72873 Part name (Marking on product) MIAA20WB600TMH E 72873 G1 G3 G5 G2 G4 G6 U V W NTC1 N EU EV EW P P1 B NB D8 D12 D9 D13 NTC2 GB D1 D3 D5 D2 D4 D6 T1 T3 T5 T2 T4 T6 D11 D10

© 2009 IXYS All rights reserved 2 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage T VJ = 150°C 600 V IF25 IF80 forward current T C = 25°C T C = 80°C A A V F forward voltage IF = 20 A; VGE = 0 V TVJ = 25°C T VJ = 125°C 1.95 1.65 2.2 V V Q rr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 300 V diF /dt = -370 A/µs TVJ = 125°C IF = 20 A; VGE = 0 V 0.58 10.7 110 µC A ns µJ R thJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) 0.55

1.6 K/W

Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage T VJ = 150°C 600 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 IC80 collector current T C = 25°C T C = 80°C A A P tot total power dissipation T C = 25°C 100 W VCE(sat) collector emitter saturation voltage IC = 20 A; VGE = 15 V TVJ = 25°C T VJ = 125°C 2.1 2.4 2.7 V V V GE(th) gate emitter threshold voltage IC = 0.5 A; VGE = VCE T VJ = 25°C 4.5 5.5 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C T VJ = 125°C 1.3 1.1 mA mA I GES gate emitter leakage current VGE = ±20 V 150 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 900 pF QG(on) total gate charge VCE = 300 V; VGE = 15 V; IC = 20 A 76 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 25°C VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 W 155 0.39 0.4 ns ns ns ns mJ mJ t d(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 125°C VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 W 165 150 0.6 0.54 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 47 W; IC = 30 A TVJ = 125°C VCEK < VCES-LS·dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 360 V; VGE = ±15 V; TVJ = 125°C RG = 47 W; tp = 10 µs; non-repetitive 90 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 0.45

1.3 K/W

TC = 25°C unless otherwise stated

© 2009 IXYS All rights reserved 3 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Brake T7 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage TVJ = 150°C 600 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 IC80 collector current T C = 25°C T C = 80°C A A P tot total power dissipation T C = 25°C 100 W VCE(sat) collector emitter saturation voltage IC = 20 A; VGE = 15 V TVJ = 25°C T VJ = 125°C 2.1 2.4 2.7 V V V GE(th) gate emitter threshold voltage IC = 0.5 A; VGE = VCE T VJ = 25°C 4.5 5.5 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C T VJ = 125°C 0.8 1.0 mA mA I GES gate emitter leakage current VGE = ±20 V 150 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz 900 pF QG(on) total gate charge VCE = 300 V; VGE = 15 V; IC = 15 A 76 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 25°C VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 W 155 0.39 0.4 ns ns ns ns mJ mJ t d(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 125°C VCE = 300 V; IC = 20 A VGE = ±15 V; RG = 47 W 165 150 0.6 0.54 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = ±15 V; RG = 47 W; IC = 40 A TVJ = 125°C VCEK < VCES-LS·dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 360 V; VGE = ±15 V; TVJ = 125°C RG = 47 W; tp = 10 µs; non-repetitive 90 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 0.45 Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitive reverse voltage T VJ = 150°C 600 V IF25 IF80 forward current T C = 25°C T C = 80°C A A V F forward voltage IF = 10 A; VGE = 0 V TVJ = 25°C T VJ = 125°C 1.7 1.4 2.2 V V I R reverse current VR = VRRM T VJ = 25°C T VJ = 125°C 0.2 0.1 mA mA Q rr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 300 V diF /dt = -300 A/µs TVJ = 125°C IF = 10 A; VGE = 0 V 0.3 8.8 µC A ns µJ R thJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) 0.85

2.5 K/W

TC = 25°C unless otherwise stated

© 2009 IXYS All rights reserved 4 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Input Rectifier Bridge D8 - D11 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitive reverse voltage T VJ = 25°C 1600 V IFAV IDAVM average forward current max. average DC output current sine 180° TC = 80°C rect.; d = 1/3 T C = 80°C A A I FSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25°C T VJ = 125°C 270 tbd A A I 2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25°C T VJ = 125°C 365 tbd A2s A2s Ptot total power dissipation T C = 25°C 50 W VF forward voltage IF = 30 A TVJ = 25°C T VJ = 125°C 1.35 1.35 1.6 V V I R reverse current VR = VRRM T VJ = 25°C T VJ = 125°C 0.3 0.01 mA mA R thJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) (per diode) 0.7

2.1 K/W

Symbol Definitions Conditions min. typ. max. Unit R25 B25/50 resistance T C = 25°C 4.75 5.0 3375 5.25 kW K Module Ratings Symbol Definitions Conditions min. typ. max. Unit TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 -40 125 150 125 V ISOL isolation voltage IISOL < 1 mA; 50/60 Hz 2500 V~ CTI comparative tracking index - FC mounting force 40 80 N dS dA creep distance on surface strike distance through air 12.7 mm mm Weight 35 g Equivalent Circuits for Simulation Ratings Symbol Definitions Conditions min. typ. max. Unit rectifier diode D8 - D13 TVJ = 125°C 0.9 V mW IGBT T1 - T6 TVJ = 125°C 1.1 V mW free wheeling diode D1 - D6 TVJ = 125°C 1.25 V mW IGBT T7 TVJ = 125°C 1.1 V mW free wheeling diode D7 TVJ = 125°C 1.25 V mW I TC = 25°C unless otherwise stated

© 2009 IXYS All rights reserved 5 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Part number M = Module I = IGBT A = IGBT (NPT) A = Gen 1 / std 20 = Current Rating [A] WB = 6-Pack + 3~ Rectifier Bridge & Brake Unit 600 = Reverse Voltage [V] T = NTC MH = MiniPack2 Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIAA 20 WB 600 TMH MIAA20WB600TMH Box 20 503764 Circuit Diagram Outline Drawing Dimensions in mm (1 mm = 0.0394“) A 40,6 55,9 12,4 25,6 26,6 39,6 45,6 14Ø4 0,5 17 ±0,35 20,5 ±0,50 8,15 ±0,35 A ( 2 : 1 ) 1,4 1,8 3,6 1,2 2,2 0,635 Pin positions with tolerance Ø 0.4 Product Marking 8,89 16,51 20,32 24,13 26,37 27,94 31,75 35,56 44,45 48,26 2,54 6,35 8,89 10,16 17,78 19,05 22,86 31,75 B P N NB GB L1 L3 NTC1 G3 V G1 U G5 W EWG6 EV G4 EU G2 NTC2 G1 G3 G5 G2 G4 G6 U V W NTC1 N EU EV EW P P1 B NB D8 D12 D9 D13 NTC2 GB D1 D3 D5 D2 D4 D6 T1 T3 T5 T2 T4 T6 D10 D11

© 2009 IXYS All rights reserved 6 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Typical output characteristics, VGE = 15 V Typical output characteristics (125°C) Typical transfer characteristics Typical forward characteristics of freewheeling diode Vce [V] Ic [A] 25 °C 125 °C Vce [V] Ic [A] Vge= 19V Vge= 17V Vge= 15V Vge= 13V Vge= 11V Vge= 9V 5 6 7 8 9 10 11 12 13 14 Vge [V] Ic [A] 25 °C 125 °C Vf [V] If [A] 25 °C 125 °C

© 2009 IXYS All rights reserved 7 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Typical turn on gate charge Typical switching energy versus collector current Typical switching energy versus gate resistance Typical turn-off characteristics of free wheeling diode 0 5 10 15 20 25 30 35 40 45 50 55 60 65 70 Qg [nC] Vge [[V] Ic = 15A Vce = 300V 0.2 0.4 0.6 0.8 1.2 1.4 1.6 1.8 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 Ic, If [A] E [mJ] Eon Eof f Er ec Vce = 300V Vge = +/-15V Rg = 68W Tvj = 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 1.3 1.4 50 75 100 125 150 175 200 225 250 275 300 325 350 Rg [W ] E [mJ] Eon Eof f Er ec Ic, If = 15A Vce = 300V Vge = +/-15V Tvj = 125°C 330 W 68 W 68 W 330 W 150 W 5.5 6.5 7.5 8.5 9.5 10.5 11.5 100 150 200 250 300 350 400 dif/dt [A/µs] Irr [A] 110 115 120 125 130 135 140 145 150 155 160 165 170 175 180 trr [ns] Ir r trr If = 15A Vce = 300V Vge = +/-15V Tvj = 125°C

© 2009 IXYS All rights reserved 8 - 8 20090226b MIAA20WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information 100 1000 10000 100000 0 25 50 75 100 125 150 T [°C] Rnom [ Typical turn-off characteristics of free wheeling diode Typical forward characteristics of brake diode Typical forward characteristics per rectifier Typical thermistor resistance versus temperature W 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 0.55 0.6 0.65 0.7 0 5 10 15 20 25 30 35 If [A] Qrr [µC] Vce = 300V Vge = +/-15V Rg = 68W Tvj = 125°C Vf [V] If [A] 25 °C 125 °C Vf [V] If [A] 25 °C 125 °C