MIAA10WB600TMH IXYS | Alldatasheet

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© 2007 IXYS All rights reserved - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Converter - Brake - Inverter Module NPT IGBT Single Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 600 V V CES = 600 V V CES = 600 V IDAVM25 = 90 A I C25 = 8 A I C25 = 8 A IFSM = 270 A V CE(sat) = 2. V V CE(sat) = 2. V Pin configuration see outlines. Features:

  • High lev el of integration - only one pow er semiconductor module required for the whole dr ive
  • Inv erter with NPT IGBTs - low satur ation voltage - positive temper ature coefficient - fast s witching - short tail current
  • Epitaxial free wheeling diodes with hiperfast soft re verse recovery
  • Temper ature sense included Application: AC motor dr ives
  • Pumps, F ans
  • Washing machines
  • Air-conditioning system
  • Inv erter and power supplies Package: "Mini" package
  • Assembly height is 7 mm
  • Insulated base plate
  • Pins suitable f or wave soldering and PCB mounting
  • Assembly clips a vailable - IXKU 5-505 screw clamp - IXRB 5-506 click clamp
  • UL registered E72873 Part name (Marking on product) MIAA0WB600TMH E 72873 G1 G3 G5 G2 G4 G6 U V W NTC1 N EU EV EW P P1 B NB D8 D12 D9 D13 NTC2 GB D1 D3 D5 D2 D4 D6 T1 T3 T5 T2 T4 T6 D10 D11

© 2007 IXYS All rights reserved 2 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitve reverse voltage TVJ = 50°C 600 V IF25 IF80 forward current TC = 25°C TC = 80°C A A VF forward voltage IF = 0 A; VGE = 0 V TVJ = 25°C TVJ = 25°C 2.2 V V Q rr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 300 V diF /dt = -300 A/µs TVJ = 25°C IF = 0 A; VGE = 0 V 0.3 8.8 µC A ns µJ R thJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) 0.85

2.5 K/W

Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage TVJ = 50°C 600 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 IC80 collector current TC = 25°C TC = 80°C A A P tot total power dissipation TC = 25°C 70 W VCE(sat) collector emitter saturation voltage IC = 0 A; VGE = 5 V TVJ = 25°C TVJ = 25°C 2.3 2.6 V V VGE(th) gate emitter threshold voltage IC = 0.35 A; VGE = VCE TVJ = 25°C 4.5 5.5 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 0.8 0.6 mA mA I GES gate emitter leakage current VGE = ±20 V 50 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = MHz 450 pF QG(on) total gate charge VCE = 300 V; VGE = 5 V; IC = 0 A 50 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 25°C VCE = 300 V; IC = 0 A VGE = ±5 V; RG = 82 W 0.7 0.2 ns ns ns ns mJ mJ t d(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 25°C VCE = 300 V; IC = 0 A VGE = ±5 V; RG = 82 W 0.27 0.42 ns ns ns ns mJ mJ RBSO A reverse bias safe operating area VGE = ±5 V; RG = 82 W; IC = 20 A TVJ = 25°C VCEK < VCES-LS·dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 360 V; VGE = ±5 V; TVJ = 25°C RG = 82 W; tp = 0 µs; non-repetitive 40 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 0.6 K/W K/W TC = 25°C unless otherwise stated

© 2007 IXYS All rights reserved 3 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Brake T7 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage TVJ = 50°C 600 V VGES VGEM max. DC gate voltage max. transient collector gate voltage continuous transient ±20 ±30 V V I C25 IC80 collector current TC = 25°C TC = 80°C A A P tot total power dissipation TC = 25°C 70 W VCE(sat) collector emitter saturation voltage IC = 0 A; VGE = 5 V TVJ = 25°C TVJ = 25°C 2.3 2.6 V V VGE(th) gate emitter threshold voltage IC = 0.35 A; VGE = VCE TVJ = 25°C 4.5 5.5 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25°C TVJ = 25°C 0.8 0.6 mA mA I GES gate emitter leakage current VGE = ±20 V 50 nA Cies input capacitance VCE = 25 V; VGE = 0 V; f = MHz 450 pF QG(on) total gate charge VCE = 300 V; VGE = 5 V; IC = 0 A 50 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 25°C VCE = 300 V; IC = 0 A VGE = ±5 V; RG = 82 W 0.7 0.2 ns ns ns ns mJ mJ t d(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load TVJ = 25°C VCE = 300 V; IC = 0 A VGE = ±5 V; RG = 82 W 0.27 0.32 ns ns ns ns mJ mJ RBSO A reverse bias safe operating area VGE = ±5 V; RG = 82 W; IC = 20 A TVJ = 25°C VCEK < VCES-LS·dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 360 V; VGE = ±5 V; TVJ = 25°C RG = 82 W; tp = 0 µs; non-repetitive 40 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) 0.6 K/W K/W Brake Chopper D7 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitive reverse voltage TVJ = 50°C 600 V IF25 IF80 forward current TC = 25°C TC = 80°C A A V F forward voltage IF = 0 A; VGE = 0 V TVJ = 25°C TVJ = 25°C 2.2 V V I R reverse current VR = VRRM TVJ = 25°C TVJ = 25°C 0.2 0. mA mA Q rr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 300 V diF /dt = -300 A/µs TVJ = 25°C IF = 0 A; VGE = 0 V 0.3 8.8 µC A ns µJ R thJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) 0.85 TC = 25°C unless otherwise stated

© 2007 IXYS All rights reserved 4 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Input Rectifier Bridge D8 - D11 Ratings Symbol Definitions Conditions min. typ. max. Unit VRRM max. repetitive reverse voltage TVJ = 25°C 600 V IFAV IDAVM average forward current max. average DC output current sine 80° TC = 80°C rect.; d = /3 TC = 80°C A A I FSM max. forward surge current t = 0 ms; sine 50 Hz TVJ = 25°C TVJ = 25°C 270 tbd A A I 2t I2t value for fusing t = 0 ms; sine 50 Hz TVJ = 25°C TVJ = 25°C 365 tbd A2s A2s Ptot total power dissipation TC = 25°C 50 W VF forward voltage IF = 30 A TVJ = 25°C TVJ = 25°C .35 .35 V V I R reverse current VR = VRRM TVJ = 25°C TVJ = 25°C 0.3 0.0 mA mA R thJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per diode) (per diode) 0.7 2. K/W K/W Temperature Sensor NTC Ratings Symbol Definitions Conditions min. typ. max. Unit R25 B25/50 resistance TC = 25°C 4.75 5.0 3375 5.25 kW K Module Ratings Symbol Definitions Conditions min. typ. max. Unit TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature -40 -40 V ISOL isolation voltage IISOL < mA; 50/60 Hz 2500 V~ CTI comparative tracking index - FC mounting force 40 80 N dS dA creep distance on surface strike distance through air 2.7 mm mm W eight 35 g Equivalent Circuits for Simulation Ratings Symbol Definitions Conditions min. typ. max. Unit rectifier diode D8 - D TVJ = 25°C 0.9 V m W IGBT T - T6 TVJ = 25°C .0 V m W free wheeling diode D - D6 TVJ = 25°C .05 V m W IGBT T7 TVJ = 25°C .0 V m W free wheeling diode D7 TVJ = 25°C .05 V m W I TC = 25°C unless otherwise stated

© 2007 IXYS All rights reserved 5 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Part number M = Module I = IGBT A = IGBT (NPT) A = Gen / std 0 = Current Rating [A] WB = 6-Pac k + 3~ Rectifier Bridge & Brake Unit 600 = Rev erse Voltage [V] T = NTC MH = MiniPac Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MIAA 0 WB 600 TMH MIAA 0WB600TMH Box 20 502907 Circuit Diagram Outline Drawing Dimensions in mm ( mm = 0.0394“) A 40,6 55,9 2,4 25,6 26,6 39,6 45,6 4Ø4 0,5 7 ±0,35 20,5 ±0,50 8,5 ±0,35 A ( 2 : ) 3,6 2,2 0,635 Pin positions with tolerance Ø 0.4 G1 G3 G5 G2 G4 G6 U V W NTC1 N EU EV EW P P1 B NB D8 D12 D9 D13 NTC2 GB D1 D3 D5 D2 D4 D6 T1 T3 T5 T2 T4 T6 D10 D11 8,89 16,51 20,32 24,13 26,37 27,94 31,75 35,56 44,45 48,26 2,54 6,35 8,89 10,16 17,78 19,05 22,86 31,75 B P N NB GB L1 L3 NTC1 G3 V G1 U G5 W EW G6EV G4 EU G2 NTC2 Product Marking

© 2007 IXYS All rights reserved 6 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Typical output characteristics, VGE = 5 V Typical output char acteristics (25°C) T ypical transfer characteristics Typical forward characteristics of freewheeling diode Vf [V] If [A] 25 °C 125 °C Vce [V] Ic [A] 25 °C 125 °C Vce [V] Ic [A] Vge= 19V Vge= 17V Vge= 15V Vge= 13V Vge= 11V Vge= 9V 5 6 7 8 9 10 11 12 13 14 Vge [V] Ic [A] 25 °C 125 °C

© 2007 IXYS All rights reserved 7 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information Typical turn on gate charge Typical switching energy versus collector current Typical switching energy versus gate resistance Typical turn-off characteristics of free wheeling diode 330W 82W 150W 82W 330W 150W 4.5 5.5 6.5 7.5 8.5 9.5 10.5 125 150 175 200 225 250 275 300 325 dif/dt [A/µs] Irr [A] 100 105 110 115 120 125 130 135 140 145 150 155 160 trr [ns] Irr trr If = 10A Vce = 300V Vge = +/-15V Tvj = 125°C 0 5 10 15 20 25 30 35 40 45 50 55 60 Qg [nC] Vge [[V] Ic = 10A Vce = 300V 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 1.2 0 2 4 6 8 10 12 14 16 18 20 22 Ic, If [A] E [mJ] Eon Eoff Erec Vce = 300V Vge = +/-15V Rg = 82W Tvj = 125°C 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 50 75 100 125 150 175 200 225 250 275 300 325 350 Rg [W ] E [mJ] Eon Eoff Erec Ic, If = 10A Vce = 300V Vge = +/-15V Tvj = 125°C

© 2007 IXYS All rights reserved 8 - 8 20070404a MIAA10WB600TMH IXYS reserves the right to change limits, test conditions and dimensions. Advanced Technical Information 100 1000 10000 100000 0 25 50 75 100 125 150 T [°C] Rnom [ Typical turn-off characteristics of free wheeling diode Typical forward characteristics of brake diode Typical foward characteristics per rectifier Typical thermistor resistance versus temperature W 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0 2 4 6 8 10 12 14 16 18 20 22 If [A] Qrr [µC] Vce = 300V Vge = +/-15V Rg = 82W Tvj = 125°C Vf [V] If [A] 25 °C 125 °C Vf [V] If [A] 25 °C 125 °C