MEO450-12DA IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package with DCB ceramic base plate G Planar passivated chips G Short recovery time G Low switching losses G Soft recovery behaviour G Isolation voltage 3600 V~ G UL registered E 72873

Applications

G Antiparallel diode for high frequency switching devices G Free wheeling diode in converters and motor control circuits G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses 1.16 1.15 75 640 75 453 2460 3000 3600 -40...+150 -40...+125 110 115200 117100 93300 94800 4800 5280 4320 4750 150 12.7 9.6 2.25-2.75/20-25 4.50-5.50/40-48 300 1.51 1.78 520 1.76 1.96 0.114 0.071 120 x IFAVM rating includes reverse blocking losses at TVJM , VR = 0.6 VRRM , duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions VRSM VRRM Type V V 1200 1200 MEO 450-12DA Symbol Test Conditions Maximum Ratings IFRMS TC = /G176CA IFAVM /i255/i255 x TC = /G176C; rectangular, d = 0.5 A IFRM tP < 10 /G109s; rep. rating, pulse width limited by TVJM A IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A TVJ = 150/G176C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A I2t TVJ = 45/G176C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ = 150/G176C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ /G176C Tstg /G176C TSmax /G176C Ptot TC = 25/G176CW VISOL 50/60 Hz, RMS t = 1 min V~ IISOL /G163 1 mA t = 1 s V~ M d Mounting torque (M6) Nm/lb.in. Terminal connection torque (M6) Nm/lb.in. dS Creeping distance on surface mm dA Strike distance through air mm a Maximum allowable acceleration m/s 2 Weight g Symbol Test Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25/G176CV R = VRRM mA TVJ = 25/G176CV R = 0.8 • VRRM mA TVJ = 125/G176CV R = 0.8  VRRM mA VF IF = A; TVJ = 125/G176CV TVJ =2 5 /G176CV IF = A; TVJ = 125/G176CV TVJ =2 5 /G176CV VT0 For power-loss calculations only V rT m /G87 R thJH DC current K/W R thJC DC current K/W trr IF = A T VJ = 100/G176Cn s IRM VR =VT VJ = 25/G176CA -di/dt = A//G109sT VJ = 100/G176CA 749 1750 Preliminary data 3 1 Fast Recovery Epitaxial Diode (FRED) Module MEO 450-12 DA V RRM = 1200 V IFAVM = 453 A trr = 450 ns Dimensions in mm (1 mm = 0.0394")

© 2000 IXYS All rights reserved 2 - 2 0.001 0.01 0.1 1 10 0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 200 600 10000 400 800 400 800 1200 1600 2000 Kf TVJ -diF/dt t s K/W 0 400 800 1200 100 0.0 0.5 1.0 1.5 2.0 2.5 VFR -diF/dt A 200 600 10000 400 800 100 140 180 120 160 200 100 1000 100 120 100 200 300 400 500 600 700 800 IRMQ rIF A VF -diF/dt -diF/dt A//c109 s A V µC A//c109 s A//c109 s trr µC µs tfr ZthJS A//c109 s MEO 450-12 DA Fig. 4 Dynamic parameters Qr, IRM versus TVJ Fig. 5 Recovery time trr versus -diF / dt Fig. 6 Peak forward voltage VFR and tfr versus diF / dt Fig. 7 Transient thermal impedance junction to case Fig. 3 Peak reverse current IRM versus -diF / dt Fig. 2 Reverse recovery charge Qr versus -diF / dt Fig. 1 Forward current IF versus VF TVJ=125°C TVJ=25°C TVJ= 100°C VR = 600V max. typ. TVJ= 100°C VR = 600V IF=600A IF=600A IF=450A IF=225A IF=600A IF=600A IF=450A IF=225A max. typ. Q r IRM IF=600A IF=600A IF=450A IF=225A ns typ. max. TVJ= 100°C VR = 600V tfr VFR TVJ= 125°C IF = 520A Constants for ZthJS calculation: iR thi (K/W) t i (s) 1 0.001 0.08 2 0.004 0.024 3 0.027 0.112 4 0.082 0.464 V ZthJH