Features

Document overview

  • PDF pages: 7

Technical content

Features

  • Load Current up to 20Arms with 5°C/W Heat Sink
  • 800VP Blocking Voltage
  • 5mA Control Current
  • Zero-Cross Switching
  • Isolated, Low Thermal Impedance Ceramic Pad for Heat Sink Applications
  • 2500Vrms Isolation, Input to Output
  • DC Control, AC Output
  • Optically Isolated
  • Low EMI and RFI Generation
  • High Noise Immunity
  • Flammability Rating UL 94 V-0

Applications

  • Programmable Control
  • Process Control
  • Power Control Panels
  • Remote Switching
  • Gas Pump Electronics
  • Contactors
  • Large Relays
  • Solenoids
  • Motors
  • Heaters Approvals
  • UL 508 Recognized Component: File E69938

Description

CPC1998J is an AC Solid State Switch utilizing dual power SCR outputs. This device also includes zero-cross turn-on circuitry and is specified with an 800V P blocking voltage. Tightly controlled zero-cross circuitry ensures low noise switching of AC loads by minimizing the generation of transients. The optically coupled input and output circuits provide exceptional noise immunity and 2500V rms of isolation between the control and the output. As a result, the CPC1998J is well suited for industrial environments where electromagnetic interference would disrupt the operation of plant facility communications and control systems. The unique i4-PAC package pioneered by IXYS allows Solid State Relays to achieve the highest load current and power ratings. This package features a unique IXYS process in which the silicon chips are soft soldered onto the Direct Copper Bond (DCB) substrate instead of the traditional copper leadframe. The DCB ceramic, the same substrate used in high power modules, not only provides 2500V rms isolation but also very low junction-to-case thermal impedance (0.35 °C/W).

Ordering Information

AC Operating Voltage 20-240 Vrms Load Current With 5°C/W Heat Sink 20 ArmsNo Heat Sink 5 On-State Voltage Drop 1.1 VP (at IL=2AP) Blocking Voltage 800 VP Thermal Impedance, Junction-to-Case, JC 0.35 °C/W Part Description CPC1998J i4-PAC Package (25 per tube) – LED+ LEDAC Load ZC CPC1998J AC Power Switch

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1 Specifications

1.1 Absolute Maximum Ratings @ 25°C

1 Derate linearly 1.33mW / °C. 2 Free air, no heat sink. Absolute maximum ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Typical values are characteristic of the device at +25°C, and are the result of engineering evaluations. They are provided for information purposes only, and are not part of the manufacturing testing requirements.

1.2 Electrical Characteristics @ 25°C

1 Tested at a peak value equivalent. 2 Zero-cross first half-cycle @ < 100Hz. 3 Snubber circuits may be required at low power factors. 4 For high-noise environments, or high-frequency operation (>60Hz), or for applications with a high inductive load, a minimum LEDdrive current of 10mA is recommended. Symbol Min Max Units Blocking Voltage - 800 VP Reverse Input Voltage - 5 V Input Control Current - 50 mA Peak (10ms) - 1 A Input Power Dissipation 1 -1 5 0 mW T otal Power Dissipation 2 -3 . 5 W I2t for Fusing (1/2 Sine Wave, 60Hz) -2 0 0 A2s Isolation Voltage, Input to Output - 2500 Vrms ESD, Human Body Model - 8 kV Operational T emperature - 40 +85 °C Storage T emperature - 40 +125 °C Parameter Conditions Symbol Minimum Typical Maximum Units Output Characteristics Load Current Continuous No Heat Sink, V L=20-240Vrms IL 0.1 - 5 ArmsContinuous TC=25°C 0.1 - 50 Maximum Surge Current 1/2 Sine Wave, 60Hz IP -- 1 5 0 A Off-State Leakage Current VL=800V ILEAK -- 1 0 0 AP On-State Voltage Drop 1 IL=2AP - -0 . 8 5 1 . 1 VP Off-State dV/dt IF=0mA dV/dt 1000 - - V/ s Switching Speeds Tu r n - O n IF=5mA ton -- 0 . 5 cyclesTu r n - O f f toff -- 0 . 5 Zero-Cross T urn-On Voltage 2 1st half-cycle - -5 2 0 Vsubsequent half-cycle -- - 5 Holding Current - IH -4 4 5 0 m A Latching Current - IL -4 8 7 5 m A Operating Frequency - -2 0 - 5 0 0 H z Load Power Factor for Guaranteed T urn-On 3 f=60Hz PF 0.25 - - - Input Characteristics Input Control Current to Activate 4 IL=1A Resistive, f=60Hz IF --5 m A Input Dropout Voltage - -0 . 8 - - V Input Voltage Drop IF=5mA VF 0.9 1.2 1.5 V Reverse Input Current VR=5V IR -- 1 0 A Input/Output Characteristics Capacitance, Input-to-Output VIO=0V , f=1MHz CIO --3 p F

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2 Thermal Characteristics

2.1 Thermal Management

Device high current characterization was performed using Kunze heat sink KU 1-159, phase change thermal interface material KU-ALC 5, and transistor clip KU 4-499/1. This combination provided an approximate junction-to-ambient thermal impedance of 12.5°C/W.

2.2 Heat Sink Calculation

Higher load currents are possible by using lower thermal impedance heat sink combinations.

2.3 Thermal Performance Data

Parameter Conditions Symbol Rating Units Thermal Impedance (Junction to Case) - JC 0.35 °C/W Thermal Impedance (Junction to Ambient) Free Air JA 33 °C/W Junction T emperature (Operating) - TJ -40 to +125 °C θCA = - θJC (TJ - TA) PD TJ = Junction Temperature (°C), TJ ≤ 125°C * TA = Ambient Temperature (°C) θJC = Thermal Impedance, Junction to Case (°C/W) = 0.35°C/W θCA = Thermal Impedance of Heat Sink & Thermal Interface Material , Case to Ambient (°C/W) PD = On-State Voltage (Vrms)  Load Current (Arms) * Elevated junction temperature reduces semiconductor lifetime. NOTE: The exposed surface of the DCB substrate is not to be soldered. Heat Sink Rating Load Current (Arms) 0 5 10 15 20 25 30 35 40 Output Power (W) Output Power vs. Load Current Temperature (ºC) 0 25 50 75 100 125 Output Power (W) Output Power vs. Ambient Temperature Heat Sink 1ºC/W 2ºC/W 5ºC/W 10ºC/W 15ºC/W Free Air

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3 Performance Data*

*Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC. Zero-Cross Voltage (V) Device Count (N) Zero-Cross Voltage (N=50, IF=5mA) Forward Voltage Drop (V) Device Count (N) Forward Voltage Drop Distribution (N=50, IF=5mA, IL=2A) LED Forward Current (mA) Device Count (N) Typical IF for Switch Operation with 1A Resistive Load (N=50, VL=120VAC/60Hz) LED Forward Voltage (V) Device Count (N) Typical LED Forward Voltage Drop (N=50, IF=5mA) Blocking Voltage (VP) 874 876 8788 8 0 882 884 886 Device Count (N) Typical Blocking Voltage Distribution (N=50) Load Frequency (Hz) 0 100 200 300 400 500 600 LED Forward Current (mA) 4.85 4.90 4.95 5.00 5.05 5.10 5.15 5.20 LED Current to Operate vs. Load Frequency - Inductive Load (VL=200V, ZL=400mH/220Ω) Load Frequency (Hz) 0 100 200 300 400 500 600 LED Forward Current (mA) 2.5 3.0 3.5 4.0 4.5 5.0 LED Current to Operate vs. Load Frequency - Resistive Load (VP=71V, RL=10Ω, IL=7A) Temperature (ºC) -40 -20 0 20 40 60 80 100 LED Forward Current (mA) 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 LED Forward Current to Operate vs. Temperature - Inductive Load (IL=500mA, fL=60Hz, LL=400mH) Temperature (ºC) -40 -20 0 20 40 60 80 100 LED Forward Current (mA) 2.5 3.0 3.5 4.0 4.5 LED Forward Current to Operate vs. Temperature - Resistive Load (IL=1A, fL=60Hz) Temperature (ºC) -40 -20 0 20 40 60 80 100 LED Forward Voltage (V) 1.1 1.2 1.3 1.4 1.5 1.6 Typical LED Forward Voltage Drop vs. Temperature IF=50mA IF=20mA IF=10mA IF=5mA Load Frequency (Hz) 0 100 200 300 400 500 600 LED Forward Current (mA) 5.10 5.12 5.14 5.16 5.18 5.20 LED Current to Operate vs. Load Frequency- Inductive Load (VL=200V, ZL=196mH/110Ω)

INTEGRATED CIRCUITS DIVISION 5 www.ixysic.com R07 CPC1998J *Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC. Temperature (ºC) -40 -20 0 20 40 60 80 100 Leakage current (μA) 0.001 0.01 0.1 100 Leakage Current vs. Temperature Measured Across Pins 1&2 VL=800V VL=600V VL=400V Temperature (ºC) -40 -20 0 20 40 60 80 100 Breakdown Voltage (V) 800 850 900 950 1000 Breakdown Voltage vs. Temperature (IF=0mA) Temperature (ºC) 0 1 02 03 04 05 06 07 080 90 100 Thermal Resistance (ºC/W) Total Heat Sinking Required vs. Temperature IL=5Arms IL=7.5Arms IL=10Arms IL=15Arms IL=20Arms Temperature (ºC) -40 -20 0 20 40 60 80 100 Holding Current (mA) Holding Current vs. Temperature (RL=1.9Ω) Temperature (ºC) -40 -20 0 20 40 60 80 100 VON (V) 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 VON vs. Temperature IL=3A IL=2A IL=1A IL=10A IL=5A Voltage (V) Current (A) -15 -10 Output Voltage vs. Output Current (IF=5mA) TA=-40ºC TA=25ºC TA=85ºC Temperature (ºC) -40 -20 0 20 40 60 80 100 Zero-Cross Voltage (V) 6.0 6.2 6.4 6.6 6.8 7.0 7.2 7.4 Zero-Cross Voltage vs. Temperature (IF=5mA, RL=120Ω) Time 100μs 1ms 10ms 100ms 1s 10s Current (A) Maximum Surge Current Non-Repetitive, Free Air 100 1000

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4 Manufacturing Information

4.1 ESD Sensitivity

This product is ESD Sensitive, and should be handled according to the industry standard JESD-625.

4.2 Soldering Profile

For through-hole devices, the maximum and minimum peak solder temperature limits (Tp) and the device maximum total dwell time through all solder waves is provided in the table below. Dwell time is the interval the device pins are at or above the minimum peak solder temperature. Body temperature of the device must not exceed the limit given in the table below at any time during the soldering process. *Total cumulative duration of all waves. NOTE: The exposed surface of the DCB substrate must not be soldered.

4.3 Board Wash

IXYS Integrated Circuits recommends the use of no-clean flux formulations. Board washing to reduce or remove flux residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage to the device. These precautions include but are not limited to: using a low pressure wash and providing a follow up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the variability of the wash parameters used to clean the board, determination of the bake temperature and duration necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning or drying methods that employ ultrasonic energy may damage the device and should not be used. Additionally, the device must not be exposed to halide flux or solvents. Device Solder Temperature (Tp) Body Temperature Dwell Time Wave Cycles Minimum Maximum CPC1998J 235°C 260°C 245°C 10 seconds* 1

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4.4 Mechanical Dimensions

For additional information please visit our website at: https://www.ixysic.com DCB Substrate

1.270 TYP

(0.050 TYP) NOTES: 1. Controlling dimension: Inches. 2. Metallized external surface of DCB substrate maintains 2500Vrms isolation to device internal structure and all external pins. 20.879 ± 0.254 (0.822 ± 0.010) 20.396 ± 0.508 (0.803 ± 0.020) 15.240 ± 0.508 (0.600 ± 0.020) 3.810 ± 0.254 (0.150 ± 0.010) 2.362 ± 0.381 (0.093 ± 0.015) 19.914 ± 0.254 (0.784 ± 0.010) 5.029 ± 0.127 (0.047 ± 0.003) 15.490 ± 0.254 (0.610 ± 0.010) 1.757 ± 0.381 (0.069 ± 0.015) 17.221 ± 0.254 (0.678 ± 0.010) DIMENSIONS mm (inches) 0.635 ± 0.076 (0.025 ± 0.003) 2.794 ± 0.127 (0.110 ± 0.005) NOTE: Substrate NOT to be soldered Disclaimer Notice - Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at https://www.littelfuse.com/disclaimer-electronics. Specification: DS-CPC1998J-R07 ©Copyright 2020, Littelfuse, Inc. All rights reserved. Printed in USA. 11/12/2020