MEA95-06DA IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package with DCB ceramic base plate G Planar passivated chips G Short recovery time G Low switching losses G Soft recovery behaviour G Isolation voltage 3600 V~ G UL registered E 72873

Applications

G Antiparallel diode for high frequency switching devices G Free wheeling diode in converters and motor control circuits G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses x IFAV rating includes reverse blocking losses at TVJM , VR = 0.6 VRRM , duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions -40...+150 -40...+125 110 3000 3600 12.7 9.6 280 2.5-4/22-35 2.5-4/22-35 1.01 2.85 0.550 0.450 0.5 100 1.36 1.55 300 2.05 2.09 100 250 300 300 14 200 21 1200 1300 1080 1170 7200 7100 5800 5700 749 123 123 123 VRSM VRRM Type V V MEA95-06 DA MEK 95-06 DA MEE 95-06 DA 600 600 Symbol Test Conditions Maximum Ratings IFRMS Tcase = /G32/G32/G176CA IFAV /i255/i255 x Tcase = /G32/G32/G176C; rectangular, d = 0.5 A IFRM tP < 10 /G109s; rep. rating, pulse width limited by TVJM A IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A TVJ = 150/G176C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A I2t TVJ = 45/G176C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ = 150/G176C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ /G176C Tstg /G176C THmax /G176C Ptot Tcase = 25/G176CW VISOL 50/60 Hz, RMS t = 1 min V~ IISOL /G163 1 mA t = 1 s V~ M d Mounting torque (M5) Nm/lb.in. Terminal connection torque (M5) Nm/lb.in. dS Creep distance on surface mm dA Strike distance through air mm a Maximum allowable acceleration m/s 2 Weight g Symbol Test Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25/G176CV R = VRRM mA TVJ = 25/G176CV R = 0.8 • VRRM mA TVJ = 125/G176CV R = 0.8  VRRM mA VF IF = A; TVJ = 125/G176CV TVJ =2 5 /G176CV IF = A; TVJ = 125/G176CV TVJ =2 5 /G176CV VT0 For power-loss calculations only V rT TVJ = 125°C m /G87 R thJH DC current K/W R thJC DC current K/W trr IF =A T VJ = 100/G176Cn s IRM VR =V T VJ = 25/G176CA -di/dt = A/ /G109sT VJ = 100/G176CA TO-240 AA MEA 95-06 DA MEK 95-06 DA MEE 95-06 DA VRRM = 600 V IFAV = 95 A trr = 250 ns

© 2000 IXYS All rights reserved 2 - 2 MEA 95-06 DA MEE 95-06 DA MEK 95-06 DA 200 600 10000 400 800 100 150 200 250 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.2 0.4 0.6 0.8 1.0 VFR diF/dt A 200 600 10000 400 800 10 100 1000 100 125 150 175 200 IRMQ rIF A VF -diF/dt -diF/dt A//c109 s A V µC A//c109 s A//c109 s trr ns tfr A//c109 s µs Fig. 7 Transient thermal impedance junction to heatsink TVJ= 100°C VR = 300V TVJ= 100°C IF = 150A Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus voltage drop VF per leg TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V Q r IRM Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt tfr TVJ=150°C TVJ=100°C TVJ=25°C IF=190A IF= 95A IF=47.5A IF=190A IF= 95A IF=47.5A IF=190A IF= 95A IF=47.5A Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.037 0.002 2 0.138 0.134 3 0.093 0.25 4 0.282 0.274 ZthJH VFR