MEA75-12 IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package with DCB ceramic base plate G Planar passivated chips G Short recovery time G Low switching losses G Soft recovery behaviour G Isolation voltage 3600 V~ G UL registered E 72873

Applications

G Antiparallel diode for high frequency switching devices G Free wheeling diode in converters and motor control circuits G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses Preliminary data 75 107 75 75 TBD 1200 1300 1080 1170 7200 7100 5800 5700 2.50-4/22-35 2.50-4/22-35 100 1.85 2.17 300 2.58 2.64 0.5 1.48 3.65 015 123 123 123 VRSM VRRM Type V V MEA75-12 DA MEK 75-12 DA MEE 75-12 DA 1200 1200 Symbol Test Conditions Maximum Ratings IFRMS Tcase= °CA IFAV Tcase= °C; rectangular, d = 0.5 A IFRM tP < 10 µs; rep. rating, pulse width limited by TVJM A IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A TVJ = 150°C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A I2t TVJ = 45°C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ = 150°C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ °C Tstg °C THmax °C Ptot Tcase = 25°CW VISOL 50/60 Hz, RMS t = 1 min V~ IISOL ≤ 1 mA t = 1 s V~ Md Mounting torque (M5) Nm/lb.in. Terminal connection torque (M5) Nm/lb.in. dS Creep distance on surface mm dA Strike distance through air mm a Maximum allowable acceleration m/s 2 Weight g Symbol Test Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25°CV R = VRRM mA TVJ = 25°CV R = 0.8 • VRRM mA TVJ = 125°CV R = 0.8 • VRRM mA VF IF = A; T VJ = 125°CV TVJ =2 5 °CV IF = A; T VJ = 125°CV TVJ =2 5 °CV VT0 For power-loss calculations only V rT mΩ RthJH DC current K/W RthJC DC current K/W trr IF = A T VJ = 100°Cn s IRM VR = V T VJ = 25°CA -di/dt = A/µsT VJ = 100°CA Fast Recovery Epitaxial Diode (FRED) Module MEA 75-12 DA MEK 75-12 DA MEE 75-12 DA V RRM = 1200 V IFAV = 75 A trr = 250 ns TO-240 AA

© 2000 IXYS All rights reservedD6 - 6 200 600 10000 400 800 150 200 250 300 350 0.001 0.01 0.1 1 10 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 50 100 150 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 100 0.0 0.4 0.8 1.2 1.6 2.0 VFR diF/dt A 200 600 10000 400 800 100 10 100 1000 0123 100 125 150 175 200 IRMQr IF A VF -diF/dt -diF/dt A/µs A V µC A/µs A/µs trr ns tfr A/µs µs 75-12 DA Fig. 7 Transient thermal impedance junction to heatsink TVJ= 100°C VR = 600V TVJ= 100°C IF = 150A Fig. 3 Peak reverse current I RM versus -diF/dt Fig. 2 Reverse recovery charge Q r versus -diF/dt Fig. 1 Forward current I F versus voltage drop VF per leg TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V Qr IRM Fig. 4 Dynamic parameters Q r, IRM versus junction temperature TVJ Fig. 5 Recovery time t rr versus -diF/dt Fig. 6 Peak forward voltage V FR and tfr versus diF/dt tfr TVJ=125°C TVJ= 25°C IF= 150A IF= 100A IF= 70A IF= 150A IF= 100A IF= 70A IF= 150A IF= 100A IF= 70A Constants for ZthJH calculation: iR thi (K/W) t i (s) 1 0.037 0.002 2 0.138 0.134 3 0.093 0.25 4 0.282 0.274 ZthJH MEA 75-12 DA MEE 75-12 DA MEK 75-12 DA VFR 016