MEA300-06DA IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package with DCB ceramic base plate G Planar passivated chips G Short recovery time G Low switching losses G Soft recovery behaviour G Isolation voltage 3600 V~ G UL registered E 72873

Applications

G Antiparallel diode for high frequency switching devices G Free wheeling diode in converters and motor control circuits G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses Dimensions in mm (1 mm = 0.0394") 3000 3600 -40...+150 -40...+125 110 28800 29300 23300 23800 2400 2640 2160 2380 150 12.7 9.6 2.25-2.75/20-25 4.50-5.50/40-48 150 1.05 1.27 260 1.19 1.36 0.228 0.143 300 250 300 300 44 400 66 Preliminary data x IFAVM rating includes reverse blocking losses at TVJM , VR = 0.6 VRRM , duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions 75 430 A 75 304 1640 0.85 1.34 m /G87 MEA 300-06DA MEK 300-06DA MEE 300-06DA 749 875 123 123 123 VRSM VRRM Type V V 600 600 Symbol Test Conditions Maximum Ratings IFRMS TC = /G176C IFAVM /i255/i255 x TC = /G176C; rectangular, d = 0.5 A IFRM tP < 10 /G109s; rep. rating, pulse width limited by TVJM A IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A TVJ = 150/G176C; t = 10 ms (50 Hz), sine A t = 8.3 ms (60 Hz), sine A I2t TVJ = 45/G176C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ = 150/G176C; t = 10 ms (50 Hz), sine A 2s t = 8.3 ms (60 Hz), sine A 2s TVJ /G176C Tstg /G176C TSmax /G176C Ptot TC = 25/G176CW VISOL 50/60 Hz, RMS t = 1 min V~ IISOL /G163 1 mA t = 1 s V~ M d Mounting torque (M6) Nm/lb.in. Terminal connection torque (M6) Nm/lb.in. dS Creeping distance on surface mm dA Strike distance through air mm a Maximum allowable acceleration m/s 2 Weight g Symbol Test Conditions Characteristic Values (per diode) typ. max. IR TVJ = 25/G176CV R = VRRM mA TVJ = 25/G176CV R = 0.8 • VRRM mA TVJ = 125/G176CV R = 0.8  VRRM mA VF IF = A; TVJ = 125/G176CV TVJ =2 5 /G176CV IF = A; TVJ = 125/G176CV TVJ =2 5 /G176CV VT0 For power-loss calculations only V rT R thJH DC current K/W R thJC DC current K/W trr IF = A T VJ = 100/G176Cn s IRM VR = V T VJ = 25/G176CA -di/dt = A//G109sT VJ = 100/G176CA Fast Recovery Epitaxial Diode (FRED) Module MEA 300-06 DA MEK 300-06 DA MEE 300-06 DA V RRM = 600 V IFAVM = 304 A trr = 250 ns 2 3

© 2000 IXYS All rights reserved 2 - 2 200 600 10000 400 800 200 250 300 350 400 0.001 0.01 0.1 1 10 0.00 0.05 0.10 0.15 0.20 0.25 0 40 80 120 160 0.4 0.6 0.8 1.0 1.2 1.4 Kf TVJ -diF/dt t s K/W 0 200 400 600 800 1000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VFR diF/dt V 200 600 10000 400 800 100 150 200 100 1000 100 200 300 400 500 IRM Q rIF A VF -diF/dt -diF/dt A//c109 s A V µC A//c109 s A//c109 s trr ns tfr ZthJS A//c109 s µs MEA 300-06 DA MEE 300-06 DA MEK 300-06 DA 814 Fig. 7 Transient thermal impedance junction to heatsink TVJ= 100°C VR = 300V TVJ= 100°C IF = 300A Constants for ZthJS calculation: iR thi (K/W) t i (s) 1 0.002 0.08 2 0.008 0.024 3 0.054 0.112 4 0.164 0.464 TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V Q r IRM TVJ=125°C TVJ=25°C IF= 600A IF= 300A IF= 150A IF= 600A IF= 300A IF= 150A IF= 600A IF= 300A IF= 150A VFR tfr Fig. 3 Typ. peak reverse current IRM versus -diF/dt Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus max. voltage drop VF per leg Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ Fig. 5 Typ. recovery time trr versus -diF/dt Fig. 6 Typ. peak forward voltage VFR and tfr versus diF/dt ZthJH