MEA250-12DA IXYS | Alldatasheet
Document overview
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Technical content
Features
G International standard package with DCB ceramic base plate G Planar passivated chips G Short recovery time G Low switching losses G Soft recovery behaviour G Isolation voltage 3600 V~ G UL registered E 72873
Applications
G Antiparallel diode for high frequency switching devices G Free wheeling diode in converters and motor control circuits G Inductive heating and melting G Uninterruptible power supplies (UPS) G Ultrasonic cleaners and welders Advantages G High reliability circuit operation G Low voltage peaks for reduced protection circuits G Low noise switching G Low losses Dimensions in mm (1 mm = 0.0394") 300 450 500 600 55 400 83 1.16 1.46 75 367 75 260 1480 3000 3600 -40...+150 -40...+125 110 28800 29300 23300 23800 2400 2640 2160 2380 150 12.7 9.6 2.25-2.75/20-25 4.50-5.50/40-48 150 1.38 1.69 260 1.54 1.80 0.228 0.143 Preliminary data x IFAVM rating includes reverse blocking losses at TVJM , VR = 0.6 VRRM , duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions MEA 250-12DA MEK 250-12DA MEE 250-012DA 749 875 Fast Recovery Epitaxial Diode (FRED) Module MEA 250-12 DA MEK 250-12 DA MEE 250-12 DA V RRM = 1200 V IFAVM = 260 A trr = 450 ns 2 3
© 2000 IXYS All rights reserved 2 - 2 0.001 0.01 0.1 1 10 0.00 0.05 0.10 0.15 0.20 0.25 0 40 80 120 160 0.2 0.4 0.6 0.8 1.0 1.2 1.4 200 600 10000 400 800 200 400 600 800 1000 1200 Kf TVJ -diF/dt t s K/W 0 400 800 1200 100 0.0 0.5 1.0 1.5 2.0 2.5 VFR diF/dt A 200 600 10000 400 800 100 140 180 120 160 200 100 1000 100 150 200 250 300 350 400 450 500 IRMQ rIF A VF -diF/dt -diF/dt A//c109 s A V µC A//c109 s A//c109 s trr ns µs tfr ZthJS A//c109 s Fig. 7 Transient thermal impedance junction to heatsink TVJ= 100°C VR = 600V TVJ= 125°C IF = 260A Constants for ZthJS calculation: iR thi (K/W) t i (s) 1 0.002 0.08 2 0.008 0.024 3 0.054 0.112 4 0.164 0.464 Fig. 3 Peak reverse current IRM versus -diF/dt Fig. 2 Reverse recovery charge Qr versus -diF/dt Fig. 1 Forward current IF versus voltage drop VF per leg TVJ= 100°C VR = 600V TVJ= 100°C VR = 600V Fig. 4 Dynamic parameters Qr, IRM versus junction temperature TVJ Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt tfr TVJ=125°C TVJ= 25°C IF= 300A; max. IF= 300A; typ. IF= 250A; typ. IF= 125A; typ. IF= 300A; max. IF= 300A; typ. IF= 250A; typ. IF= 125A; typ. IRM Q r IF= 300A; max. IF= 300A; typ. IF= 250A; typ. IF= 125A; typ. VFR MEA 250-12 DA MEE 250-12 DA MEK 250-12 DA V ZthJH