MCO75-12IO1 IXYS | Alldatasheet

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Technical content

Backside: isolated TAV TV V 1,27 RRM 1200 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control SOT-227B (minibloc)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~ 3000 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact the sales office, which is responsible for yo u. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact the sales office, whi ch is responsible for you. Should you intend to use the product in aviation, i n health or live endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. I V I A VT 1,28 R 0,45 K/W min. V V

50 T = 25°C VJ

T = °C VJ mA 10 V = V T = 25°C VJ I = A T V T = °C C 80 Ptot 270 WT = 25°C C 1200 forward voltage drop total power dissipation Conditions Unit 1,60 T = 25°C VJ 125 VT0 V0,85 T = °C VJ 150 rT 5,5 mΩ V1,27 T = °C VJ I = A T V 1,67 I = A 150 I = A 150 threshold voltage slope resistance for power loss calculation only µA 125 V V1200 T = 25°C VJ I A125 PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 150 Wt = 5P PGAV W0,5 average gate power dissipation CJ 54 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 150 I²t T = 45°C value for fusing T = °C 150 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 150 1,07 1,16 4,14 4,00 kA kA A A 910 980 5,73 5,55 1200 300 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 150°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 150°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 225 AT P G = 0,3 di /dt A/µs; G = 0,3 DRM cr V = ⅔ V DRM GK 1000 1,5 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 100 mA T = °C -40 VJ 1,6 V 200 mA VGD gate non-trigger voltage T = °C VJ 0,2 V IGD gate non-trigger current 10 mA V = ⅔ V D DRM 150 latching current T = °C VJ 450 mA IL 25 t µs p = 10 I A; G = 0,3 di /dt A/µs G = 0,3 holding current T = °C VJ 200 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0,3 di /dt A/µs G = 0,3 V = ½ V D DRM turn-off time T = °C VJ 150 µs tq di/dt = A/µs 10 dv/dt = V/µs 15 V = R 100 V; I A; T = 75 V = ⅔ V DRM t µs p = 200 non-repet., I = 75 AT 125 RthCH thermal resistance case to heatsink K/W Thyristor 1300 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0,10 IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

1) IRMS is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact. Ratings abcd Zyyww XXXXX Product Marking Logo Part No. DateCode Assembly Code Assembly Line Package Top °C MD Nm 1,5 mounting torque 1,1 TVJ °C 150 virtual junction temperature -40 Weight g30 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 1,5 terminal torque 1,1 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 10,5 3,2 8,6 6,8 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 150 Aper terminal 125 -40 terminal to terminal SOT-227B (minibloc) Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL MCO75-12io1 505515 Tube 10 MCO75-12io1 Standard

3000 ISOL

Tstg °C 150 storage temperature -40 2500 threshold voltage V0,85 mΩ V0 max R0 max slope resistance * 3,4 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 150 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

Outlines SOT-227B (minibloc) IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved

0,01 0,1 1 400 500 600 700 800 900 0,5 1,0 1,5 2,0 100 120 140 160 1 10 100 1000 10000 0,0 0,1 0,2 0,3 0,4 0,5 ITSM [A] IT [A] VT [V] t [ms] ZthJC [K/W] 2 3 4 5 6 7 8 9 0 11 1000 2000 3000 4000 5000 6000 I2t [A 2s] t [ms] IT(AV)M [A] TC [°C] 0 25 50 75 100 125 150 100 120 140 Fig. 1 Forward characteristics Fig. 3 I 2t versus time (1-10 ms) t [s] Fig. 6 Max. forward current at case temperature Fig. 2 Surge overload current Fig. 8 Transient thermal impedance junction to case TVJ = 25°C TVJ = 125°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 125°C TVJ = 45°C VR = 0 V 125°C 150°C 0 20 40 60 80 100 120 160 IT(AV) [A] P(AV) [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 50 100 150 Tamb [°C] dc = 0.5 0.4 0.33 0.17 0.08 10 100 1000 100 1000 IG [mA] VG [V] tgd [µs] IG [mA] typ. Limit TVJ = 125°C Fig. 4 Gate trigger characteristics Fig. 5 Gate controlled delay time dc = 0.5 0.4 0.33 0.17 0.08 Rthi [K/W] t i [s] 0.030 0.011 0.035 0.002 0.065 0.027 0.108 0.480 0.212 0.170 RthHA 0.2 0.4 0.6 0.8 1.0 2.0 1 10 100 1000 10000 0,1 4: PGAV= 0.5 W 5: PGM = 5 W 6: PGM = 10 W 1: IGD, TVJ = 125°C 2: IGT, TVJ = 25°C 3: IGT, TVJ = -40°C IGD, TVJ = 125°C Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20150827b Data according to IEC 60747and per semiconductor un less otherwise specified © 2015 IXYS all rights reserved