MCMA700P1600CA IXYS | Alldatasheet

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Backside: isolated TAV TV V 1.11 RRM 700 1600 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Direct Copper Bonded Al2O3-ceramic
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control ComPack
  • Industry standard outline
  • RoHS compliant
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Phase Change Material available
  • Isolation Voltage: V~ 4800 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20171113c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V MA²s MA²s MA²s MA²s Symbol Definition Ratings typ. max. I V I A VT 1.16 R 0.05 K/W min. 700 V V 2T = 25°C VJ T = °C VJ mA 40 V = V T = 25°C VJ I = A T V T = °C C 85 Ptot 2300 WT = 25°C C 700 1600 forward voltage drop total power dissipation Conditions Unit 1.41 T = 25°C VJ 125 VT0 V0.82 T = °C VJ 140 rT 0.4 mΩ V1.11 T = °C VJ I = A T V 700 1.41 I = A 1400 I = A 1400 threshold voltage slope resistance for power loss calculation only mA 125 V V1600 T = 25°C VJ I A1100 PGM Wt = 30 µs 240 max. gate power dissipation P T = °C C 140 Wt = 120 P PGAV W40 average gate power dissipation CJ 876 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 140 I²t T = 45°C value for fusing T = °C 140 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 140 19.0 20.5 1.30 1.27 kA kA kA kA 16.2 17.4 1.81 1.75 1600 300 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 100 repetitive, I = TVJ = 140°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 140°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 2100 AT P G = 1 di /dt A/µs; G = 1 DRM cr V = ⅔ V DRM GK 1000 2 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 300 mA T = °C -40 VJ 3 V 400 mA VGD gate non-trigger voltage T = °C VJ 0.25 V IGD gate non-trigger current 10 mA V = ⅔ V D DRM 140 latching current T = °C VJ 400 mA IL 25 t µs p = 30 I A; G = 1 di /dt A/µs G = 1 holding current T = °C VJ 300 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 1 di /dt A/µs G = 1 V = ½ V D DRM turn-off time T = °C VJ 350 µs tq di/dt = A/µs 10 dv/dt = V/µs 50 V = R 100 V; I A; T = 700 V = ⅔ V DRM t µs p = 200 non-repet., I = 700 AT 125 RthCH 0.020 thermal resistance case to heatsink K/W Rectifier 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 IXYS reserves the right to change limits, condition s and dimensions. 20171113c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

2D Matrix Part No. Assembly Line Date Code C M M A 700 P 1600 CA Part description Thyristor (SCR) Thyristor (up to 1800V) Phase leg ComPack Module Current Rating [A] Reverse Voltage [V] Package Top °C MD Nm 5mounting torque 3 TVJ °C 140 virtual junction temperature -40 Weight g500 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 14 terminal torque 12 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 21.0 18.0 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 1200 Aper terminal 125 -40 terminal to terminal ComPack Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL MCMA700P1600CA 513835 Box 3MCMA700P1600CA Standard

4800 ISOL

Tstg °C 125 storage temperature -40 4000 threshold voltage V0.82 mΩ V0 max R0 max slope resistance * 0.21 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 140 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20171113c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

66.0 +0.0 -0.7 27.25 ±0.3 21 ±1.0 48.0 +0. 7 - 0.0 3.0 +0.2 - 0.0 92.0 +0.5 -0.3 baseplate typ. 100 µm convex over 62.5 mm before mounting 37.5 +0.5 - 0.0 50.5 ±1.0 label 25.85 ±0.3 6.1 baseplate typ. 100 µm convex over 54.5 mm before mounting 61.0 A 5.0 ±0.2 21. 2 7.2 6.0 A (2:1) 0.8 2.8 30.0 +0.5 - 0.0 23.0 107 ±0.5 39.5 ±0.5 18.0 80,0 93,5 30.0 ±0.5 45.0 65.0 ±0.5 M10x16 (3x) Ø 5.5 48.0 3 1 26 57 4 Outlines ComPack IXYS reserves the right to change limits, condition s and dimensions. 20171113c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.01 0.10 1.00 10.00 0.1 1.0 10.0 100.0 0.01 0.1 1 6000 8000 10000 12000 14000 160 00 200 400 600 800 1000 1200 1400 1 10 100 1000 10000 0.00 0.01 0.02 0.03 0.04 0.05 0.06 IT [A] t [s]VT [V] 2 3 4 5 6 7 8 9 0 11 10 5 10 6 10 7 I2t [A2s] t [ms] ITSM [A] TVJ = 25°C TVJ = 45°C

50 Hz, 80% VRRM

TVJ = 45°C VR = 0 V ITAVM [A] Tcase [°C] ZthJC [K/W] t [ms] Fig. 1 Forward characteristics Fig. 2 Surge overload current ITSM: crest value, t: duration Fig. 3 I 2t versus time (1-10 s) Fig. 4 Gate voltage & gate current Fig. 6 Max. forward current at case temperature Fig. 8 Transient thermal impedance junction to case tgd [µs] IG [A] lim. typ. Fig. 5 Gate controlled delay time t gd 0 200 400 600 800 200 400 600 800 1000 IT(AV) [A] Ptot [W] Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature 0 40 80 120 160 Tamb [°C] TVJ = 125°C dc = 0.5 0.4 0.33 0.17 0.08 dc = 0.5 0.4 0.33 0.17 0.08 0.01 0.1 1 10 0.1 100 VG [V] IG [A] TVJ = 140°C TVJ = 140°C TVJ = 125°C 140°C i R thi (K/W) ti (s) 1 0.0020 0.0150 2 0.0080 0.0800 3 0.0130 0.2200 4 0.0370 0.3800 IGT (TVJ = -40°C) IGT (TVJ = 25°C) IGD (TVJ = 140°C) PGM = 240 W; tp = 30 µs

120 W; tp = 300 µs

PGAV = 40 W RthHA 0.05 0.10 0.20 0.30 0.40 0.50 Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20171113c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved