MCC56 IXYS | Alldatasheet

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Technical content

Features

G International standard package, JEDEC TO-240 AA G Direct copper bonded Al2O 3 -ceramic base plate G Planar passivated chips G Isolation voltage 3600 V~ G UL registered, E 72873 G Gate-cathode twin pins for version 1B

Applications

G Softstart AC motor controller G Light, heat and temperature control Advantages G Space and weight savings G Simple mounting with two screws G Improved temperature and power cycling G Reduced protection circuits 6 745 TO-240 AA MCD Version 8 MCC Version 8 MCC Version 1 36 7 1 5 4 2 36 1 5 2 31 5 2 31 5 4 2 MCD Version 1 031 MDC Version 1 36 7 1 2

© 2000 IXYS All rights reserved 2 - 4 Symbol Test Conditions Characteristic Values IRRM , IDRM TVJ = TVJM ; VR = VRRM ; VD = VDRM 5m A VT, VF IT, IF = 200 A; TVJ = 25/G176C 1.57 V VT0 For power-loss calculations only (TVJ = 125/G176C) 0.85 V rT 3.7 m /G87 VGT VD = 6 V; T VJ = 25/G176C 1.5 V TVJ = -40/G176C 1.6 V IGT VD = 6 V; T VJ = 25/G176C 100 mA TVJ = -40/G176C 200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM 0.2 V IGD 10 mA IL TVJ = 25/G176C; tP = 10 /G109s; VD = 6 V 450 mA IG = 0.45 A; diG /dt = 0.45 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 200 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM 2 /G109s IG = 0.45 A; diG /dt = 0.45 A//G109s tq TVJ = TVJM ; IT = 150 A, tP = 200 /G109s; -di/dt = 10 A//G109s typ. 150 /G109s VR = 100 V; dv/dt = 20 V//G109s; VD = 2/3 VDRM Q S TVJ = TVJM ; IT, IF = 50 A, -di/dt = 3 A//G109s 100 /G109C IRM 24 A R thJC per thyristor/diode; DC current 0.45 K/W per module other values 0.225 K/W R thJK per thyristor/diode; DC current see Fig. 8/9 0.65 K/W per module 0.325 K/W d S Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for module-type MCC 56 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") MCC / MCD / MDC Version 1 B MCC Version 8 B MCD Version 8 B 10 100 1000 100 1000 100 101 102 103 104 0.1 IG VG mA mA IG 1: IGT , TVJ = 125/c176 C 2: IGT , TVJ = 25/c176 C 3: IGT , TVJ = -40/c176 C µs tgd V 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD , TVJ = 125/c176 C 5 6 Limittyp. TVJ = 25/c176 C Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time MCC 56 MDC 56 MCD 56 Version 1 or 8 without B in typ designation = without insert in mountig holes

© 2000 IXYS All rights reserved 3 - 4 Fig. 3 Surge overload current ITSM , IFSM : Crest value, t: duration Fig. 4/G242i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature MCC 56 MDC 56 MCD 56

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) R thJC for various conduction angles d: dR thJC (K/W) DC 0.45 180/G176 0.47 120/G176 0.49 60/G176 0.505 30/G176 0.52 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.014 0.015 2 0.026 0.0095 3 0.41 0.175 R thJK for various conduction angles d: d R thJK (K/W) DC 0.65 180/G176 0.67 120/G176 0.69 60/G176 0.705 30/G176 0.72 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.014 0.015 2 0.026 0.0095 3 0.41 0.175 4 0.2 0.67 MCC 56 MDC 56 MCD 56