MCD310-14IO1 IXYS | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 6

Technical content

Thyristor \\ Diode Module Part number MCD310-14io1 Backside: isolated TAV TV V 1.08 RRM 320 1400 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Direct Copper Bonded Al2O3-ceramic
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3600 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms and Conditions of Usage IXYS reserves the right to change limits, condition s and dimensions. 20170116c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. I V I A VT 1.14 R 0.11 K/W min. 320 V V 1T = 25°C VJ T = °C VJ mA 40 V = V T = 25°C VJ I = A T V T = °C C 85 Ptot 1030 WT = 25°C C 300 1400 forward voltage drop total power dissipation Conditions Unit 1.32 T = 25°C VJ 140 VT0 V0.80 T = °C VJ 140 rT 0.82 mΩ V1.08 T = °C VJ I = A T V 300 1.30 I = A 600 I = A 600 threshold voltage slope resistance for power loss calculation only mA 125 V V1400 T = 25°C VJ I A500 PGM Wt = 30 µs 120 max. gate power dissipation P T = °C C 140 Wt = 60 P PGAV W20 average gate power dissipation CJ 438 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 140 I²t T = 45°C value for fusing T = °C 140 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 140 9.20 9.94 305.8 296.7 kA kA kA kA 7.82 8.45 423.2 410.6 1400 500 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 100 repetitive, I = TVJ = 140°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 140°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 960 AT P G = 1 di /dt A/µs; G = 1 DRM cr V = ⅔ V DRM GK 1000 2 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 150 mA T = °C -40 VJ 3 V 200 mA VGD gate non-trigger voltage T = °C VJ 0.25 V IGD gate non-trigger current 10 mA V = ⅔ V D DRM 140 latching current T = °C VJ 200 mA IL 25 t µs p = 30 I A; G = 0.45 di /dt A/µs G = 0.45 holding current T = °C VJ 150 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 1 di /dt A/µs G = 1 V = ½ V D DRM turn-off time T = °C VJ 200 µs tq di/dt = A/µs 10 dv/dt = V/µs 50 V = R 100 V; I A; T = 320 V = ⅔ V DRM t µs p = 200 non-repet., I = 320 AT 125 RthCH 0.040 thermal resistance case to heatsink K/W Rectifier 1500 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 IXYS reserves the right to change limits, condition s and dimensions. 20170116c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Date Code (DC) + Production Index (PI) Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Circuit Package Top °C MD Nm 5mounting torque 2.5 TVJ °C 140 virtual junction temperature -40 Weight g255 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 15 terminal torque 12 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 13.0 13.0 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 600 Aper terminal 125 -40 terminal to terminal Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL MCD310-14io1 428809 Box 2MCD310-14io1 Standard

3600 ISOL

Tstg °C 125 storage temperature -40 3000 threshold voltage V0.8 mΩ V0 max R0 max slope resistance * 0.32 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 140 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20170116c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

max. 12.4 6 5.5 2 3 4 5 6 7 28.5 35 42.5 3x M8 2.8/0.8 65 x 57 4.5 0.25 13 ±1 3 1 25 4 Outlines Y2 IXYS reserves the right to change limits, condition s and dimensions. 20170116c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

TVJ = 45°C TVJ = 140°C

50 Hz, 80% VRRM

[A] 12000 10000 8000 6000 2000 4000 t [s] 10 -2 10 -1 10 0 10 1 Fig. 1 Surge overload current IT(F)SM : crest value, t: duration VR = 0 V TVJ = 140°C TVJ = 45°C t [ms] I2t [A 2s] 10 6 10 5 1 2 3 6 8 10 Fig. 2 I 2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature 0 50 100 150 TC [°C] DC 180° sin 120° 60° 30° 200 600 500 400 200 100 ITAVM [A] 300 Fig. 4 Power dissipation versus onstate current and • ambient temperature (per thyristor/diode) DC 180° sin 120° 60° 30° 0 50 100 150 TA [°C] ITAVM , I FAVM [A] 0 100 200 500 300 400 800 600 400 200 PT [W] RthJA [K/W] 0.2 0.3 0.4 0.5 0.6 0.8 1.4 Circuit 3x MCC310 or 3x MCD310 RthKA [K/W] 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 0 50 100 150 TA [°C] Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature IdAVM [A] 0 200 400 600 800 3000 2500 1500 500 PT [W] 2000 1000 Fig. 5 Gate trigger characteristics Fig. 7 Gate trigger delay time IGT : TVJ = -40°C IGT : TVJ = 0°C IGT : TVJ = 25°C 1: P GAV = 20W 2: P GAV = 60W 3: P GAV = 120W IGD : TVJ = 25°C TVJ = 125°C VG [V] 0.1 0.01 0.001 0.01 0.1 150 IG [A] 1 10 100 100 100 100 0.01 0.1 1 10 tgd [µs] IG [A] TVJ = 25°C Limit typ. Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20170116c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

TA [°C] IRMS [A] 0 200 600 400 3000 2500 1500 500 Ptot [W] RthJA [K/W] 0.03 0.04 0.06 0.08 0.1 0.15 0.2 0.3 2000 1000 10-3 0.05 0.10 0.15 0.20 0.00 0.05 0.10 0.15 30° DC 30° DC ZthJC [K/W] t [s] 10-2 10-1 100 101 102 ZthJK [K/W] t [s] 10-3 10-2 10-1 100 101 102 Fig. 7 Three phase AC-controller: • Power dissipation versus RMS output current and ambient tempe rature Fig. 8 Transient thermal impedance junction to case (per t hyristor) Fig. 9 Transient thermal impedance junction to heats ink (per t hyristor) RthJC for various conduction angles d: d R thJC (K/W) DC 0.112 180°C 0.113 120°C 0.114 60°C 0.115 30°C 0.115 Constants for Z thJC calculation: i R thi [K/W] t i [s] 1 0.003 0.099 2 0.0143 0.168 3 0.0947 0.456 R thJK for various conduction angles d: d R thJK [K/W] DC 0.152 180°C 0.154 120°C 0.154 60°C 0.155 30°C 0.155 Constants for Z thJK calculation: i R thi (K/W) t i (s) 1 0.003 0.099 2 0.0143 0.168 3 0.0947 0.456 4 0.04 1.36 Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20170116c Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved