MCC225 IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Direct copper bonded Al2O 3-ceramic with copper base plate G Planar passivated chips G Isolation voltage 3600 V~ G UL registered E 72873 G Keyed gate/cathode twin pins

Applications

G Motor control, softstarter G Power converter G Heat and temperature control for industrial furnaces and chemical processes G Lighting control G Solid state switches Advantages G Simple mounting G Improved temperature and power cycling G Reduced protection circuits ITRMS = 2x 400 A ITAVM = 2x 221 A VRRM = 1200-1800 V Data according to IEC 60747 and refer to a single thyristor/diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions MCC 225 MCD 225 Thyristor Modules Thyristor/Diode Modules 3 76 54 MCD MCC 36 7 1 5 4 2 31 5 4 2

© 2000 IXYS All rights reserved 2 - 4 Symbol Test Conditions Characteristic Values IRRM , IDRM TVJ = TVJM ; VR = VRRM ; VD = VDRM 40 mA VT, VF IT, IF = 600 A; TVJ = 25/G176C 1.40 V VT0 For power-loss calculations only (TVJ = 130/G176C) 0.8 V rT 0.76 m /G87 VGT VD = 6 V; T VJ = 25/G176C2 V TVJ = -40/G176C3 V IGT VD = 6 V; T VJ = 25/G176C 150 mA TVJ = -40/G176C 220 mA VGD TVJ = TVJM ;V D = 2/3 VDRM 0.25 V IGD TVJ = TVJM ;V D = 2/3 VDRM 10 mA IL TVJ = 25/G176C; tP = 30 /G109s; VD = 6 V 200 mA IG = 0.45 A; diG /dt = 0.45 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK = /G165 150 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM 2 /G109s IG = 1 A; diG /dt = 1 A//G109s tq TVJ = TVJM ; IT = 300 A, tP = 200 /G109s; -di/dt = 10 A//G109s typ. 200 /G109s VR = 100 V; dv/dt = 50 V//G109s; VD = 2/3 VDRM Q S TVJ = 125/G176C; IT, IF = 300 A; -di/dt = 50 A//G109s 550 /G109C IRM 235 A R thJC per thyristor (diode); DC current 0.157 K/W per module other values 0.08 K/W R thJK per thyristor (diode); DC current see Fig. 8/9 0.197 K/W per module 0.1 K/W d S Creeping distance on surface 12.7 mm dA Creepage distance in air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 MCC 225 MCD 225 Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time 0.01 0.1 1 10 100 10-3 10-2 10-1 100 101 102 0.1 IG VG A A IG 1: IGT , TVJ = 140/c176 C 2: IGT , TVJ = 25/c176 C 3: IGT , TVJ = -40/c176 C µs tgd V 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD , TVJ = 140/c176 C Limittyp. TVJ = 25/c176 C 0.01 0.1 1 10 100 10-3 10-2 10-1 100 101 102 0.1 IG VG A A IG 1: IGT , TVJ = 130/c176 C 2: IGT , TVJ = 25/c176 C 3: IGT , TVJ = -40/c176 C µs tgd V 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD , TVJ = 130/c176 C Limittyp. TVJ = 25/c176 C Dimensions in mm (1 mm = 0.0394") MCC MCD M8x20 M8x20

© 2000 IXYS All rights reserved 3 - 4 I2dt Ptot TA TCt 0.001 0.01 0.1 1 2000 4000 6000 8000 11 0 104 105 106 A2s 0 25 50 75 100 125 150 100 200 300 400 ITSM A A ITAVM IFAVM 0 2 55 07 5 1 0 0 1 2 5 1 5 00 100 200 300 100 200 300 400 W Ptot A° C R thKA K/W 0 25 50 75 100 125 1500 200 400 600 500 1000 1500 2000 0.2 0.15 R thKA K/W 0.3 Circuit 0.1 0.2 0.3 0.4 0.6 0.8 1.0 3xMCD225 3xMCC225 0.03 0.05 0.08 0.1 80 % VRRM TVJ = 45°C 50 Hz TVJ = 130°C s TVJ = 45°C TVJ = 130°C ms t ITAVM /IFAVM TA IdAVM A W 180° sin 120° 60° 30° DC 180° sin 120° 60° 30° DC Fig. 3 Surge overload current ITSM , IFSM : Crest value, t: duration Fig. 4/G242i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature MCC 225 MCD 225

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) R thJC for various conduction angles d: d R thJC (K/W) DC 0.157 180/G176 0.168 120/G176 0.177 60/G176 0.200 30/G176 0.243 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0076 0.00054 2 0.0406 0.098 3 0.0944 0.54 4 0.0147 12 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) R thJK for various conduction angles d: d R thJK (K/W) DC 0.197 180/G176 0.208 120/G176 0.217 60/G176 0.240 30/G176 0.283 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.0076 0.00054 2 0.0406 0.098 3 0.0944 0.54 4 0.0147 12 5 0.04 12 MCC 225 MCD 225 s t ZthJK s t 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 0.25 0.30 K/W ZthJC K/W IRMS W Ptot 0 25 50 75 100 125 1500 100 200 300 400 500 1000 1500 2000 A 0.2 0.15 0.1 R thKA K/W 0.3 TA 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 0.25 0.03 0.05 0.08 DC 180° 120° 60° 30° DC 180° 120° 60° 30° Circuit 3xMCD225 3xMCC225 or