MCC224 IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G D irect C opper B onded Al2O 3-ceramic with copper base plate G Planar passivated chips G Isolation voltage 3600 V~ G UL registered E 72873 G Keyed gate/cathode twin pins

Applications

G Motor control, softstarter G Power converter G Heat and temperature control for industrial furnaces and chemical processes G Lighting control G Solid state switches Advantages G Simple mounting G Improved temperature and power cycling G Reduced protection circuits MCC 224 MCD 224 Thyristor Modules Thyristor/Diode Modules 3 76 54 MCD MCC 36 7 1 5 4 2 31 5 4 2 VRSM VRRM Type VDSM VDRM VV 2100 2000 MCC 224-20io1 MCD 224-20io1 2300 2200 MCC 224-22io1 MCD 224-22io1 024

© 2000 IXYS All rights reserved 2 - 4 Optional accessories for modules Keyed Gate/Cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180 L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180 R (R = Right for pin pair 6/7) CSA class 5851, guide 460-1-1 150 220 0.139 0.069 0.179 0.089 12.7 9.6 600 1.4 0.8 0.76 0.25 150 Symbol Test Conditions Characteristic Values I RRM , IDRM TVJ = TVJM ; VR = VRRM mA VT IT =A ; T VJ = 25/G176CV VT0 For power-loss calculations only (TVJ = TVJM )V rT m /G87 VGT VD = 6 V; TVJ = 25/G176CV TVJ = -40/G176CV IGT VD = 6 V; TVJ = 25/G176Cm A TVJ = -40/G176Cm A VGD TVJ = TVJM ;V D = 2/3 VDRM V IGD TVJ = TVJM ;V D = 2/3 VDRM mA IL TVJ = 25/G176C; VD = 6 V; tP = 30 /G109s 200 mA diG /dt = 0.45 A//G109s; IG = 0.45 A IH TVJ = 25/G176C; VD = 6 V; RGK = /G165 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM 2 /G109s diG /dt = 1 A//G109s; IG = 1 A tq TVJ = TVJM ; VR = 100 V; VD = 2/3 VDRM ; tP = 200 /G109s typ. 200 /G109s dv/dt = 50 V//G109s; IT = 300 A; -di/dt = 10 A//G109s Q S TVJ = TVJM 760 /G109C IRM -di/dt = 50 A//G109s; IT = 400 A 275 A R thJC per thyristor; DC current K/W per module K/W R thJK per thyristor; DC current K/W per module K/W d S Creeping distance on surface mm dA Creepage distance in air mm a Maximum allowable acceleration m/s 2 Fig. 1 Gate trigger characteristics 0.01 0.1 1 10 100 10-3 10-2 10-1 100 101 102 0.1 IG VG A A IG 1: IGT , TVJ = 140/c176 C 2: IGT , TVJ = 25/c176 C 3: IGT , TVJ = -40/c176 C µs tgd V 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD , TVJ = 140/c176 C Limittyp. TVJ = 25/c176 C 0.01 0.1 1 10 100 10-3 10-2 10-1 100 101 102 0.1 IG VG A A IG 1: IGT , TVJ = 130/c176 C 2: IGT , TVJ = 25/c176 C 3: IGT , TVJ = -40/c176 C µs tgd V 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IGD , TVJ = 130/c176 C Limittyp. TVJ = 25/c176 C Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD M8x20 M8x20 MCC 224 MCD 224

© 2000 IXYS All rights reserved 3 - 4 0 25 50 75 100 125 1500 100 200 300 100 200 300 400 500 0 25 50 75 100 125 150 11 0 104 105 106 0.001 0.01 0.1 1 2000 4000 6000 8000 0 200 400 600 500 1000 1500 2000 I2t ITAVM IdAVM A Ptot W TA TC s t ms t A2s 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 150 200 250 300 350 400 ITSM A A ITAVM W Ptot A °C 0.8 0.2 0.3 0.4 0.6 RthKA K/W 0.1 0.2 0.15 0.1 0.08 0.05 0.03 0.3 3xMCC224 Circuit TA RthKA K/W 180° sin 120° 60° 30° DC 180° sin 120° 60° 30° DC VR = 0V 80 % VRRM 50 Hz Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 3 Surge overload current I TSM : Crest value, t: duration Fig. 4 I2t versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature TVJ = 45°C TVJ = 130°C TVJ = 45°C TVJ = 130°C 745 MCC 224 MCD 224

© 2000 IXYS All rights reserved 4 - 4 t ZthJK s t 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 0.25 0.30 K/W ZthJC IRMS Ptot 0 25 50 75 100 125 1500 100 200 300 400 500 500 1000 1500 2000 A 3xMCC224 Circuit 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 0.25 DC DC 180° 120° 60° 30° TA W K/W s 30° 60° 120° 180° 0.2 0.15 0.1 0.08 0.05 0.03 0.3 R thKA K/W Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) R thJK for various conduction angles d: d R thJK (K/W) DC 0.179 180/G176 0.188 120/G176 0.196 60/G176 0.216 30/G176 0.256 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.0067 0.00054 2 0.0358 0.098 3 0.0832 0.54 4 0.0129 12 5 0.04 12 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature R thJC for various conduction angles d: d R thJC (K/W) DC 0.139 180/G176 0.148 120/G176 0.156 60/G176 0.176 30/G176 0.214 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0067 0.00054 2 0.0358 0.098 3 0.0832 0.54 4 0.0129 12 Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) 745 MCC 224 MCD 224