MCD132-16IO1 IXYS | Alldatasheet

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Thyristor \\ Diode Module 3 1 25 4 Part number MCD132-16io1 Backside: isolated TAV TV V 1.08 RRM 130 1600 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Direct Copper Bonded Al2O3-ceramic
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3600 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20160408b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. I V I A VT 1.14 R 0.23 K/W min. 130 V V

200 T = 25°C VJ

T = °C VJ mA 10 V = V T = 25°C VJ I = A T V T = °C C 85 Ptot 435 WT = 25°C C 150 1600 forward voltage drop total power dissipation Conditions Unit 1.36 T = 25°C VJ 125 VT0 V0.80 T = °C VJ 125 rT 1.5 mΩ V1.08 T = °C VJ I = A T V 150 1.36 I = A 300 I = A 300 threshold voltage slope resistance for power loss calculation only µA 125 V V1600 T = 25°C VJ I A300 PGM Wt = 30 µs 120 max. gate power dissipation P T = °C C 125 Wt = 60 P PGAV W8average gate power dissipation CJ 211 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 125 I²t T = 45°C value for fusing T = °C 125 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 125 4.75 5.13 81.6 79.1 kA kA kA kA 4.04 4.36 112.8 109.5 1600 500 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 125°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 125°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 500 AT P G = 0.5 di /dt A/µs; G = 0.5 DRM cr V = ⅔ V DRM GK 1000 2.5 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 150 mA T = °C -40 VJ 2.6 V 200 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current 10 mA V = ⅔ V D DRM 125 latching current T = °C VJ 300 mA IL 25 t µs p = 30 I A; G = 0.5 di /dt A/µs G = 0.5 holding current T = °C VJ 200 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.5 di /dt A/µs G = 0.5 V = ½ V D DRM turn-off time T = °C VJ 150 µs tq di/dt = A/µs 10 dv/dt = V/µs 20 V = R 100 V; I A; T = 160 V = ⅔ V DRM t µs p = 200 non-repet., I = 160 AT 100 RthCH 0.100 thermal resistance case to heatsink K/W Rectifier 1700 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 IXYS reserves the right to change limits, condition s and dimensions. 20160408b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

Date Code (DC) Production Index (PI) Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Circuit Package Top °C MD Nm 2.75 mounting torque 2.25 TVJ °C 125 virtual junction temperature -40 Weight g150 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 5.5 terminal torque 4.5 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 14.0 10.0 16.0 16.0 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 300 Aper terminal 100 -40 terminal to terminal Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL MCD132-16io1 430625 Box 6MCD132-16io1 Standard

3600 ISOL

Tstg °C 125 storage temperature -40 3000 threshold voltage V0.8 mΩ V0 max R0 max slope resistance * 0.8 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 125 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20160408b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

IXYS reserves the right to change limits, condition s and dimensions. 20160408b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

Ta [°C] TC [°C] t [ms]t [s] 0.001 0.01 0.1 1 1000 2000 3000 4000 0 11 10 4 10 5 10 6 0 25 50 75 100 125 150 120 160 200 240 280 320 ITSM [A] ITAVM [A] 0 50 100 150 200 250 120 160 200 240 280 320 360 400 Ptot [W] ITAVM [A] 0 25 50 75 100 125 150 0 100 200 300 400 500 200 400 600 800 1000 1200 1400 I2dt [A2s] TVJ = 45°C 180° sin 120° 60° 30° DC TVJ = 125°C 50 Hz 80% V RRM TVJ = 45°C TVJ = 125°C RthKA K/W 0.3 0.4 0.5 0.6 0.8 1.0 1.4 1.8 Ptot [W] IdAVM [A] T a [°C] Circuit 3xMCC132 or 3x MCD132 Fig. 1 Surge overload current I TSM, IFSM: Crest value, t: duration Fig. 2 I 2t versus time (1-10 ms) Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation vs. on-state current & ambient temp erature (per thyristor or diode) Fig. 5 Gate trigger characteristics Fig. 6 Three phase rectifier bridge: Power dissipation vers us direct output current and ambient temperature Fig. 7 Gate trigger delay time 180° sin 120° 60° 30° DC RthKA K/W 0.2 0.08 0.1 0.15 0.04 0.06 0.03 0.3 0.01 0.1 1 10 0.1 100 0.01 0.1 1 10 0.1 100 IG [A] VG [V] IG [A] TVJ = 25°C tgd [μs] IGT (TVJ = -40°C) IGT (TVJ = 0°C) IGT (TVJ = 25°C) 125°C 25°C limit typ. tp = 30 µs tp = 500 µs PGM = 120 W 60 W PGAV = 8 W IGD Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20160408b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

t [s] 10-3 10-2 10-1 10 0 10 1 10 2 10 3 0.0 0.1 0.2 0.3 0.4 0.5 ZthJC [K/ W] IRMS [A] Ptot [W] 0 25 50 75 100 125 150 Ta [°C] 10-3 10 -2 10 -1 10 0 101 10 2 0.0 0.1 0.2 0.3 0.4 Circuit 3xMCC132 or 3xMCD132 ZthJK [K/W] t [s] DC 180° 120° 60° 30° Fig. 8 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 9 Transient thermal impedance junction to case (per thyri stor/diode) Fig. 10 Transie nt therma l im pedance jun cti on to he ats ink (per thyristor/di ode ) RthJC for various conduction angles d: d R thJC [K/W] DC 0.230 180° 0.244 120° 0.255 60° 0.283 30° 0.321 Constants for Z thJC calculation: i R thi [K/W] t i [s] 1 0.0095 0.001 2 0.0175 0.065 3 0.2030 0.400 RthJK for various conduction angles d: d R thJK [K/W] DC 0.330 180° 0.344 120° 0.355 60° 0.383 30° 0.421 Constants for Z thJK calculation: i R thi [K/W] t i [s] 1 0.0095 0.001 2 0.0175 0.065 3 0.2030 0.400 4 0.1000 1.290 0.15 0.1 0.08 RthKA K/W 0.2 0.03 0.04 0.06 0.3 DC 180° 120° 60° 30° Rectifier IXYS reserves the right to change limits, condition s and dimensions. 20160408b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved