MCC56-18IO8B IXYS | Alldatasheet

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Backside: isolated TAV TV V 1.24 RRM 1800 V = V I = A Features / Advantages: Applications: Package:

  • Thyristor for line frequency
  • Planar passivated chip
  • Long-term stability
  • Direct Copper Bonded Al2O3-ceramic
  • Line rectifying 50/60 Hz
  • Softstart AC motor control
  • DC Motor control
  • Power converter
  • AC power control
  • Lighting and temperature control TO-240AA
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Base plate: DCB ceramic
  • Reduced weight
  • Advanced power cycling
  • Isolation Voltage: V~ 3600 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20161222b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. I V I A VT 1.26 R 0.45 K/W min. V V

200 T = 25°C VJ

T = °C VJ mA 5V = V T = 25°C VJ I = A T V T = °C C 85 Ptot 222 WT = 25°C C 100 1800 forward voltage drop total power dissipation Conditions Unit 1.57 T = 25°C VJ 125 VT0 V0.85 T = °C VJ 125 rT 3.7 mΩ V1.24 T = °C VJ I = A T V 100 1.62 I = A 200 I = A 200 threshold voltage slope resistance for power loss calculation only µA 125 V V1800 T = 25°C VJ I A94 PGM Wt = 30 µs 10 max. gate power dissipation P T = °C C 125 Wt = 5P PGAV W0.5 average gate power dissipation CJ 74 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 125 I²t T = 45°C value for fusing T = °C 125 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 125 1.50 1.62 8.13 7.87 kA kA kA kA 1.28 1.38 11.3 10.9 1800 300 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 150 repetitive, I = TVJ = 125°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 125°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 150 AT P G = 0.45 di /dt A/µs; G =0.45 DRM cr V = ⅔ V DRM GK 1000 1.5 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 100 mA T = °C -40 VJ 1.6 V 200 mA VGD gate non-trigger voltage T = °C VJ 0.2 V IGD gate non-trigger current 10 mA V = ⅔ V D DRM 125 latching current T = °C VJ 450 mA IL 25 t µs p = 10 I A; G = 0.45 di /dt A/µs G = 0.45 holding current T = °C VJ 200 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 0.45 di /dt A/µs G = 0.45 V = ½ V D DRM turn-off time T = °C VJ 150 µs tq di/dt = A/µs 10 dv/dt = V/µs 20 V = R 100 V; I A; T = 150 V = ⅔ V DRM t µs p = 200 non-repet., I = 60 AT 100 RthCH thermal resistance case to heatsink K/W Thyristor 1900 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 0.20 IXYS reserves the right to change limits, condition s and dimensions. 20161222b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

Top °C MD Nm 4mounting torque 2.5 TVJ °C 125 virtual junction temperature -40 Weight g81 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 4terminal torque 2.5 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 13.0 9.7 16.0 16.0 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 200 Aper terminal 100 -40 terminal to terminal TO-240AA Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL MCC56-18io8B 454559 Box 36 MCC56-18io8B Standard

3600 ISOL

Tstg °C 125 storage temperature -40 3000 threshold voltage V0.85 mΩ V0 max R0 max slope resistance * 2.5 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 125 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20161222b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

IXYS reserves the right to change limits, condition s and dimensions. 20161222b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

[A] t [s] Fig. 1 Surge overload current I TSM , I FSM : Crest value, t: duration t [ms] I2t [A 2s] Fig. 2 I 2t versus time (1-10 ms) Fig. 3 Maximum forward current at case temperature ITAVM [A] TC [°C] 1500 1000 500 10 -3 10 -2 10 -1 10 0 10 1 TVJ = 45°C TVJ = 125°C

50 Hz, 80% V RRM

VR = 0 V 10 5 10 3 1 2 3 6 8 10 TVJ = 45°C TVJ = 125°C 10 4 120 0 50 100 150 DC 180° sin 120° 60° 30° 100 Fig. 4 Power dissipation vs. onstate current and am bient temperature (per thyristor/diode) DC 180° sin 120° 60° 30° 0 50 100 150 TA [°C] ITAVM , I FAVM [A] 0 20 40 60 80 150 100 PT [W] RthJA [K/W] 0.8 1.2 1.5 2.5 Fig. 6 Three phase rectifier bridge: Power dissipati on versus direct output current and ambient temperature RthKA [K/W] 0.1 0.15 0.2 0.25 0.3 0.4 0.5 0.6 0 50 100 150 TA [°C] IdAVM [A] 0 50 100 Ptot [W] 100 200 300 400 600 Circuit 3x MCC56 or 3x MCD56 500 150 IG [mA] VG [V] Fig. 5 Gate trigger charact. 100 101 102 103 104 0.1 1: IGT, TVJ = 125°C 2: IGT, TVJ = 25 °C 3: IGT, TVJ = -40°C 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD, TVJ = 125°C 5 6 10 100 100 0 100 100 0 Limittyp. TVJ = 25°C IG [mA] tgd [µs] Fig. 7 Gate trigger delay time Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20161222b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved

IRMS [A] Ptot [W] TA [°C] [KW] 0.1 0.15 0.2 0.25 0.3 0.4 0.5 Circuit 3x MCC56 or 3x MCD56 600 300 200 100 400 0 50 100 0 50 100 150 Fig. 8 Three phase AC-controller: Power dissipation vs. RMS output current and ambient temperature RthJA 500 0.6 Fig. 9 Transient thermal impedance junction to case (per thyristor) 0.6 0.5 0.1 -3 10-2 10-1 100 101 102 103 0.3 30° 60° 120° 180° DC 0.2 0.4 30° 60° 120° 180° DC Fig. 10 Transient thermal impedance junction to heatsink (per thy ristor) 10-3 10-2 10-1 100 101 102 103 0.8 0.6 0.2 0.4 RthJC for various conduction angles d: DC 0.450 180° 0.470 120° 0.490 60° 0.505 30° 0.520 Constants for Z thJC calculation: 1 0.014 0.0150 2 0.026 0.0095 3 0.410 0.1750 R thJK for various conduction angles d: DC 0.650 180° 0.670 120° 0.690 60° 0.705 30° 0.720 Constants for Z thJK calculation: 1 0.014 0.0150 2 0.026 0.0095 3 0.410 0.1750 4 0.200 0.6700 Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20161222b Data according to IEC 60747and per semiconductor un less otherwise specified © 2016 IXYS all rights reserved