MCC312-12IO1 IXYS | Alldatasheet

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Backside: isolated TAV TV V 1.06 RRM 320 1200 V = V I = A Features / Advantages: Applications: Package:

  • International standard package
  • Direct copper bonded Al2O3-ceramic with copper base plate
  • Planar passivated chip
  • Isolation voltage 3600 V~
  • Keyed gate/cathode twin pins
  • Motor control, softstarter
  • Power converter
  • Heat and temperature control for industrial furnaces and chemical processes
  • Lighting control
  • Solid state switches
  • Industry standard outline
  • RoHS compliant
  • Soldering pins for PCB mounting
  • Base plate: Copper internally DCB isolated
  • Advanced power cycling
  • Isolation Voltage: V~ 3600 The data contained in this product data sheet is ex clusively intended for technically trained staff. T he user will have to evaluate the suitability of th e product for the intended application and the completeness of the product data with respect to his application. The specifications of our compon ents may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require produc t information in excess of the data given in this p roduct data sheet or which concerns the specific application of your product, please co ntact your local sales office. Due to technical requirements our product may conta in dangerous substances. For information on the typ es in question please contact your local sales offi ce. Should you intend to use the product in aviation, i n health or life endangering or life support applic ations, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. Terms Conditions of usage: IXYS reserves the right to change limits, condition s and dimensions. 20170116e Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

V = V kA²s kA²s kA²s kA²s Symbol Definition Ratings typ. max. I V I A VT 1.12 R 0.12 K/W min. 320 V V 1T = 25°C VJ T = °C VJ mA 40 V = V T = 25°C VJ I = A T V T = °C C 85 Ptot 960 WT = 25°C C 300 1200 forward voltage drop total power dissipation Conditions Unit 1.32 T = 25°C VJ 140 VT0 V0.80 T = °C VJ 140 rT 0.68 mΩ V1.06 T = °C VJ I = A T V 300 1.29 I = A 600 I = A 600 threshold voltage slope resistance for power loss calculation only mA 125 V V1200 T = 25°C VJ I A520 PGM Wt = 30 µs 120 max. gate power dissipation P T = °C C 140 Wt = 60 P PGAV W20 average gate power dissipation CJ 438 junction capacitance V = V 400 T = 25°C f = 1 MHz R VJ pF ITSM t = 10 ms; (50 Hz), sine T = 45°C VJ max. forward surge current T = °C VJ 140 I²t T = 45°C value for fusing T = °C 140 V = 0 V R V = 0 V R V = 0 V V = 0 V t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine t = 8,3 ms; (60 Hz), sine VJ R VJ R thJC thermal resistance junction to case T = °C VJ 140 9.60 10.4 332.9 323.3 kA kA kA kA 8.16 8.82 460.8 447.4 1200 500 µs RMS forward current T(RMS) TAV 180° sine average forward current (di/dt) cr A/µs 100 repetitive, I = TVJ = 140°C; f = 50 Hz critical rate of rise of current VGT gate trigger voltage V = 6 V T = °C 25 (dv/dt) T = 140°C critical rate of rise of voltage A/µs 500 V/µs t = µs; I A; V = ⅔ V R = ∞; method 1 (linear voltage rise) VJ D VJ 960 AT P G = 1 di /dt A/µs; G = 1 DRM cr V = ⅔ V DRM GK 1000 2 V T = °C -40 VJ IGT gate trigger current V = 6 V T = °C 25 D VJ 150 mA T = °C -40 VJ 3 V 220 mA VGD gate non-trigger voltage T = °C VJ 0.25 V IGD gate non-trigger current 10 mA V = ⅔ V D DRM 140 latching current T = °C VJ 200 mA IL 25 t µs p = 30 I A; G = 0.45 di /dt A/µs G = 0.45 holding current T = °C VJ 150 mA IH 25 V = 6 V D R = ∞GK gate controlled delay time T = °C VJ 2 µs tgd 25 I A; G = 1 di /dt A/µs G = 1 V = ½ V D DRM turn-off time T = °C VJ 200 µs tq di/dt = A/µs 10 dv/dt = V/µs 50 V = R 100 V; I A; T = 300 V = ⅔ V DRM t µs p = 200 non-repet., I = 320 AT 125 RthCH 0.040 thermal resistance case to heatsink K/W Thyristor 1300 RRM/DRM RSM/DSM max. non-repetitive reverse/forward blocking voltage max. repetitive reverse/forward blocking voltage R/D reverse current, drain current T T R/D R/D 200 IXYS reserves the right to change limits, condition s and dimensions. 20170116e Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

(DC) Production Index (PI) Lot.No: xxxxxx Data Matrix: part no. (1-19), DC + PI (20-25), lot.no.# (26-31), blank (32), serial no.# (33-36) Circuit Package Top °C MD Nm 7mounting torque 4.5 TVJ °C 140 virtual junction temperature -40 Weight g680 Symbol Definition typ. max. min. Conditions operation temperature Unit MT Nm 13 terminal torque 11 V Vt = 1 second Vt = 1 minute isolation voltage mm mm 16.0 16.0 d Spp/App creepage distance on surface | striking distance th rough air dSpb/Apb terminal to backside IRMS RMS current 600 Aper terminal 125 -40 terminal to terminal Delivery Mode Quantity Code No. Ordering Number Marking on Product Ordering 50/60 Hz, RMS; I ≤ 1 mA ISOL MCC312-12io1 461784 Box 3MCC312-12io1 Standard

3600 ISOL

Tstg °C 125 storage temperature -40 3000 threshold voltage V0.8 mΩ V0 max R0 max slope resistance * 0.5 Equivalent Circuits for Simulation T = VJ I V0 R0 Thyristor 140 °C * on die level IXYS reserves the right to change limits, condition s and dimensions. 20170116e Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) Type ZY 180R (R = Right for pin pair 6/7) 2.8 x 0.8 2 3 7654 115 6.2 20 22.5 35 28.5 UL 758, style 3751 52 +0 -1,4 32 +0 -1,9 15 ±1 3x M8 3 1 26 57 4 Outlines Y1 IXYS reserves the right to change limits, condition s and dimensions. 20170116e Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

0.001 0.01 0.1 1 2000 4000 6000 8000 10000 0 200 400 600 800 500 1000 1500 2000 2500 3000 0 25 50 75 100 125 150 100 200 300 400 500 600 180 ° sin 120 ° 60° 30° DC TC [°C]t [s] ITSM [A] I T(AV)M [A] I2dt [A 2s] t [ms] IT(AV)M [A] Ptot [W] TA [°C] Ptot [W] IDAVM [A] TA [°C] Fig. 1 Surge overload current ITSM:Crest value, t: duration Fig. 2 I 2dt versus time Fig. 3 Max. forward current at case temperature Fig. 4 Power dissipation versus on-state current and ambient temperature (per thyristor) Fig. 6 Three phase rectifier bridge: Power dissipation vers us direct output current and ambient temperature TVJ = 45°C TVJ = 140°C VR = 0 V 180 ° sin 120 ° 60° 30° DC 0.6 0.8 0.1 0.2 0.3 0.4 RthKA K/W 0.06 3xMCC312 or 3xMCD312 Circuit 0.2 0.15 0.1 0.07 0.04 0.02 0.3 RthKA K/W limit typ. VG [V] 10 -3 10 -2 10-1 10 0 10 1 10 2 0.1 0.01 0.1 1 10 100 4: PGM = 20 W 5: PGM = 60 W 6: PGM = 120 W IG [A] tgd [µs] IG [A] Fig. 5 Gate voltage & gate current Fig. 7 Gate controlled delay time t gd TVJ = 25°C 80 % VRRM TVJ = 45°C 50 Hz TVJ = 140°C IGD, TVJ = 140°C 3: IGT, TVJ = -40°C 2: IGT, TVJ = 25°C 1: IGT, TVJ = 140°C Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20170116e Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved

10 -3 10 -2 10 -1 10 0 10 1 10 2 0.00 0.05 0.10 0.15 0.20 0.25 0 25 50 75 100 125 150 0 200 400 600 500 1000 1500 2000 2500 3000 0 A 10 -3 10 -2 10 -1 10 0 10 1 102 0.00 0.05 0.10 0.15 0.20 Ptot [W] IRMS T] A [ A [°C] t [s] ZthJC [K/W] t [s] ZthJK [K/W] Fig. 8 Three phase AC-controller: Power dissipation vers us RMS output current and ambient temperature Fig. 9 Transient thermal impedance junction to case (pe r thyristor) Fig . 10 T ran sien t t he rmal impedan ce ju nction t o heatsin k (pe r t hyristor) 3xMCC312 or 3xMCD312 Circuit 0.2 0.15 0.1 0.07 0.04 0.02 RthKA K/W 0.3 DC 180° 120° 60° 30° DC 180° 120° 60° 30° RthJC for various conduct. angles d: Constants for ZthJC calculation: i R thi [K/W] t i [s] 1 0.0058 0.00054 2 0.0310 0.098 3 0.0720 0.54 4 0.0112 12 R thJK for various conduct. angles d: Constants for ZthJK calculation: i R thi [K/W] t i [s] 1 0.0058 0.00054 2 0.0310 0.098 3 0.0720 0.54 4 0.0114 12 5 0.0400 12 d DC 180° 120° 60° 30° R thJC [K/W] 0.120 0.128 0.135 0.153 0.185 d DC 180° 120° 60° 30° R thJK [K/W] 0.160 0.168 0.175 0.193 0.225 Thyristor IXYS reserves the right to change limits, condition s and dimensions. 20170116e Data according to IEC 60747and per semiconductor un less otherwise specified © 2017 IXYS all rights reserved