MCC250 IXYS | Alldatasheet

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Technical content

Features

 International standard package  Direct copper bonded Al 2O3 -ceramic base plate  Planar passivated chips  Isolation voltage 3600 V~  UL registered, E 72873  Keyed gate/cathode twin pins

Applications

 Motor control  Power converter  Heat and temperature control for industrial furnaces and chemical processes  Lighting control  Contactless switches Advantages  Space and weight savings  Simple mounting  Improved temperature and power cycling  Reduced protection circuits ITRMS = 2x450 A ITAVM = 2x287 A VRRM = 800-1800 V Thyristor Modules Thyristor/Diode Modules 7654 MCD MCC 36 7 1 5 4 2 31 5 4 2

© 2004 IXYS All rights reserved2 - 4 IXYS reserves the right to change limits, test conditions and dimensions MCC 250 MCD 250 419 Symbol Conditions Characteristic Values IRRM TVJ = TVJM; VR = VRRM; VD = VDRM 70 mA IDRM 40 mA VT, VF IT /IF = 600 A; TVJ = 25°C 1.36 V VT0 For power-loss calculations only (T VJ = 140°C) 0.85 V rT 0.82 m Ω VGT VD = 6 V; T VJ = 25°C 2 V TVJ = -40°C 3 V IGT VD = 6 V; T VJ = 25°C 150 mA TVJ = -40°C 200 mA VGD TVJ = TVJM;V D = 2/3 VDRM 0.25 V IGD 10 mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA IG = 0.45 A; diG/dt = 0.45 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = ½ VDRM 2µ s IG = 1 A; diG /dt = 1 A/µs tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM QS TVJ = 125°C; IT /IF = 400 A, -di/dt = 50 A/µs 760 µC IRM 275 A RthJC per thyristor/diode; DC current 0.129 K/W per module other values 0.0645 K/W RthJK per thyristor/diode; DC current see Fig. 8/9 0.169 K/W per module 0.0845 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time 20 12

© 2004 IXYS All rights reserved 3 - 4 IXYS reserves the right to change limits, test conditions and dimensions MCC 250 MCD 250 419 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature

© 2004 IXYS All rights reserved4 - 4 IXYS reserves the right to change limits, test conditions and dimensions MCC 250 MCD 250 419 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 t s ZthJK K/W t s ZthJC K/W 30° DC 30° DC Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: dR thJC (K/W) DC 0.129 180°C 0.131 120°C 0.131 60°C 0.132 30°C 0.132 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0035 0.099 2 0.0165 0.168 3 0.1091 0.456RthJK for various conduction angles d: dR thJK (K/W) DC 0.169 180°C 0.171 120°C 0.172 60°C 0.172 30°C 0.173 Constants for Z thJK calculation: iR thi (K/W) t i (s) 1 0.0033 0.099 2 0.0159 0.168 3 0.1053 0.456 4 0.04 1.36