MCC220-08IO1 IXYS | Alldatasheet
Document overview
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Technical content
Features
International standard package Direct copper bonded Al 2O3 -ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins
Applications
Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits Thyristor Modules Thyristor/Diode Modules 7654 MCD MCC 36 7 1 5 4 2 31 5 4 2
© 2004 IXYS All rights reserved2 - 4 MCC 220 MCD 220 419 Symbol Conditions Characteristic Values IRRM TVJ = TVJM; VR = VRRM; VD = VDRM 70 mA IDRM 40 mA VT, VF IT /IF = 600 A; TVJ = 25°C 1.53 V VT0 For power-loss calculations only (T VJ = 140°C) 0.9 V rT 1.0 m Ω VGT VD = 6 V; T VJ = 25°C 2 V TVJ = -40°C 3 V IGT VD = 6 V; T VJ = 25°C 150 mA TVJ = -40°C 200 mA VGD TVJ = TVJM;V D = 2/3 VDRM 0.25 V IGD 10 mA IL TVJ = 25°C; tP = 30 µs; VD = 6 V 200 mA IG = 0.45 A; diG /dt = 0.45 A/µs IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = ½ VDRM 2µ s IG = 1 A; diG /dt = 1 A/µs tq TVJ = TVJM; IT = 300 A, tP = 200 µs; -di/dt = 10 A/µs typ. 200 µs VR = 100 V; dv/dt = 50 V/µs; VD = 2/3 VDRM QS TVJ = 125°C; IT, IF = 400 A, -di/dt = 50 A/µs 760 µC IRM 275 A RthJC per thyristor/diode; DC current 0.139 K/W per module other values 0.0695 K/W RthJK per thyristor/diode; DC current see Fig. 8/9 0.179 K/W per module 0.0895 K/W dS Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time Dimensions in mm (1 mm = 0.0394") MCC MCD Threaded spacer for higher Anode/ Cathode construction: Type ZY 250, material brass 20 12
© 2004 IXYS All rights reserved 3 - 4 MCC 220 MCD 220 419 Fig. 3 Surge overload current ITSM, IFSM: Crest value, t: duration Fig. 4 ∫i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature
© 2004 IXYS All rights reserved4 - 4 MCC 220 MCD 220 419 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 0.20 10-3 10-2 10-1 100 101 102 0.00 0.05 0.10 0.15 t s ZthJK K/W t s ZthJC K/W 30° DC 30° DC Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) RthJC for various conduction angles d: dR thJC (K/W) DC 0.139 180°C 0.141 120°C 0.142 60°C 0.142 30°C 0.143 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0037 0.0099 2 0.0177 0.168 3 0.1175 0.456RthJK for various conduction angles d: dR thJK (K/W) DC 0.179 180°C 0.181 120°C 0.182 60°C 0.183 30°C 0.183 Constants for Z thJK calculation: iR thi (K/W) t i (s) 1 0.0037 0.0099 2 0.0177 0.168 3 0.1175 0.456 4 0.04 1.36