MCC19 IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package, JEDEC TO-240 AA G Direct copper bonded Al2O 3 -ceramic base plate G Planar passivated chips G Isolation voltage 3600 V~ G UL registered, E 72873 G Gate-cathode twin pins for version 1B

Applications

G Softstart AC motor controller G Light, heat and temperature control Advantages G Space and weight savings G Simple mounting with two screws G Improved temperature and power cycling G Reduced protection circuits MCC 19 6 745 TO-240 AA Version 8 B Version 1 B 36 7 1 5 4 2 36 1 5 2 Thyristor Modules

© 2000 IXYS All rights reserved 2 - 4 Symbol Test Conditions Characteristic Values IRRM , IDRM TVJ = TVJM ; VR = VRRM ; VD = VDRM 3m A VT IT = 80 A; TVJ = 25/G176C 2.05 V VT0 For power-loss calculations only (TVJ = 125/G176C) 0.85 V rT 18 m /G87 VGT VD = 6 V; T VJ = 25/G176C 1.5 V TVJ = -40/G176C 1.6 V IGT VD = 6 V; T VJ = 25/G176C 100 mA TVJ = -40/G176C 200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM 0.2 V IGD 10 mA IL TVJ = 25/G176C; tP = 10 /G109s; VD = 6 V 450 mA IG = 0.45 A; diG /dt = 0.45 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 200 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM 2 /G109s IG = 0.45 A; diG /dt = 0.45 A//G109s tq TVJ = TVJM ; IT = 20 A, tP = 200 /G109s; -di/dt = 10 A//G109s typ. 150 /G109s VR = 100 V; dv/dt = 20 V//G109s; VD = 2/3 VDRM Q S TVJ = TVJM ; IT = 25 A, -di/dt = 0.64 A//G109s5 0 /G109C IRM 6A R thJC per thyristor; DC current 1.3 K/W per module other values 0.65 K/W R thJK per thyristor; DC current see Fig. 8/9 1.5 K/W per module 0.75 K/W d S Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for module-type MCC 19 version 1 B Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 200L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 200R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Dimensions in mm (1 mm = 0.0394") Version 1 B Version 8 B MCC 19 10 100 1000 100 1000 100 101 102 103 104 0.1 IG VG mA mA IG 1: IGT , TVJ = 125/c176 C 2: IGT , TVJ = 25/c176 C 3: IGT , TVJ = -40/c176 C µs tgd V 4: PGAV = 0.5 W 5: PGM = 5 W 6: PGM = 10 W IGD , TVJ = 125/c176 C 5 6 Limittyp. TVJ = 25/c176 C Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time

© 2000 IXYS All rights reserved 3 - 4 Fig. 3 Surge overload current ITSM : Crest value, t: duration Fig. 4/G242i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature MCC 19

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor) R thJC for various conduction angles d: d R thJC (K/W) DC 1.3 180/G176 1.35 120/G176 1.39 60/G176 1.42 30/G176 1.45 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.018 0.0033 2 0.041 0.0216 3 1.241 0.191 Fig. 9 Transient thermal impedance junction to heatsink (per thyristor) R thJK for various conduction angles d: d R thJK (K/W) DC 1.5 180/G176 1.55 120/G176 1.59 60/G176 1.62 30/G176 1.65 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.018 0.0033 2 0.041 0.0216 3 1.241 0.191 4 0.2 0.46 MCC 19