L081 IXYS | Alldatasheet

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Technical content

Features

G International standard package G Direct copper bonded Al2O 3 -ceramic base plate G Planar passivated chips G Isolation voltage 3600 V~ G UL registered, E 72873 G Keyed gate/cathode twin pins

Applications

G Heat and temperature control for industrial furnaces and chemical processes G Lighting control G Contactless switches Advantages G Space and weight savings G Simple mounting G Improved temperature and power cycling G Reduced protection circuits Symbol Test Conditions Maximum Ratings ITRMS , IFRMS TVJ = TVJM 300 A ITAVM , IFAVM TC = 80/G176C; 180/G176 sine 190 A TC = 85/G176C; 180/G176 sine 181 A ITSM , IFSM TVJ = 45/G176C; t = 10 ms (50 Hz), sine 6000 A VR = 0 t = 8.3 ms (60 Hz), sine 6400 A TVJ = TVJM t = 10 ms (50 Hz), sine 5250 A VR = 0 t = 8.3 ms (60 Hz), sine 5600 A /G242i2dt TVJ = 45/G176C t = 10 ms (50 Hz), sine 180 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 170 000 A 2s TVJ = TVJM t = 10 ms (50 Hz), sine 137 000 A 2s VR = 0 t = 8.3 ms (60 Hz), sine 128 000 A 2s (di/dt)cr TVJ = TVJM repetitive, IT = 500 A 150 A/ /G109s f =50 Hz, tP =200 /G109s VD = 2/3 VDRM IG = 0.5 A non repetitive, I T = 500 A 500 A/ /G109s diG /dt = 0.5 A//G109s (dv/dt)cr TVJ = TVJM ;V DR = 2/3 VDRM 1000 V/ /G109s R GK = /G165; method 1 (linear voltage rise) PGM TVJ = TVJM tP = 30 /G109s 120 W IT = ITAVM tP = 500 /G109s6 0 W PGAV 8W VRGM 10 V TVJM 125 /G176C Tstg -40...+125 /G176C VISOL 50/60 Hz, RMS t = 1 min 3000 V~ IISOL /G163 1 mA t = 1 s 3600 V~ M d Mounting torque (M6) 2.25-2.75/20-25 Nm/lb.in. Terminal connection torque (M6) 4.5-5.5/40-48 Nm/lb.in. Weight Typical including screws 125 g MCC 162 MCD 162 Thyristor Modules Thyristor/Diode Modules 3 6 7 5 4 MCD MCC 36 7 1 5 4 2 31 5 4 2

© 2000 IXYS All rights reserved 2 - 4 Symbol Test Conditions Characteristic Values IRRM , IDRM TVJ = TVJM ; VR = VRRM ; VD = VDRM 10 mA VT, VF IT, IF = 300 A; TVJ = 25/G176C 1.25 V VT0 For power-loss calculations only (TVJ = 125/G176C) 0.88 V rT 1.15 m /G87 VGT VD = 6 V; T VJ = 25/G176C 2.5 V TVJ = -40/G176C 2.6 V IGT VD = 6 V; T VJ = 25/G176C 150 mA TVJ = -40/G176C 200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM 0.2 V IGD 10 mA IL TVJ = 25/G176C; tP = 30 /G109s; VD = 6 V 300 mA IG = 0.5 A; diG /dt = 0.5 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 200 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM 2 /G109s IG = 0.5 A; diG /dt = 0.5 A//G109s tq TVJ = TVJM ; IT = 300 A, tP = 200 /G109s; -di/dt = 10 A//G109s typ. 150 /G109s VR = 100 V; dv/dt = 20 V//G109s; VD = 2/3 VDRM Q S TVJ = TVJM ; IT, IF = 300 A, -di/dt = 50 A//G109s 550 /G109C IRM 235 A R thJC per thyristor/diode; DC current 0.155 K/W per module other values 0.0775 K/W R thJK per thyristor/diode; DC current see Fig. 8/9 0.225 K/W per module 0.1125 K/W d S Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1Dimensions in mm (1 mm = 0.0394") MCC Version 1 MCD Version 1 MCC 162 MCD 162 Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time

© 2000 IXYS All rights reserved 3 - 4 Fig. 3 Surge overload current ITSM , IFSM : Crest value, t: duration Fig. 4/G242i2dt versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature MCC 162 MCD 162

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) R thJC for various conduction angles d: d R thJC (K/W) DC 0.155 180/G176 0.167 120/G176 0.176 60/G176 0.197 30/G176 0.227 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0072 0.001 2 0.0188 0.08 3 0.129 0.2R thJK for various conduction angles d: d R thJK (K/W) DC 0.225 180/G176 0.237 120/G176 0.246 60/G176 0.267 30/G176 0.297 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.0072 0.001 2 0.0188 0.08 3 0.129 0.2 4 0.07 1.0 MCC 162 MCD 162