MCC161 IXYS | Alldatasheet
Document overview
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Technical content
Features
International standard package Direct Copper Bonded Al2O3-ceramic base plate Planar passivated chips Isolation voltage 3600 V~ UL registered, E 72873 Keyed gate/cathode twin pins
Applications
Motor control Power converter Heat and temperature control for industrial furnaces and chemical processes Lighting control Contactless switches Advantages Space and weight savings Simple mounting Improved temperature and power cycling Reduced protection circuits High Voltage Thyristor Module 3 6 7 5 4 IXYS reserves the right to change limits, test conditions and dimensions MCD MCC 3 6 71 542 31 5 4 2
© 2005 IXYS All rights reserved 2 - 3 MCC 161 MCD 161 0540 Symbol Conditions Characteristic Values IRRM, IDRM VR = VRRM;T VJ = TVJM 40 mA VT IT = 300A; T VJ = 25°C 1.36 V VT0 For power-loss calculations only (TVJ = TVJM) 0.8 V rT 1.6 m Ω VGT VD = 6 V; T VJ = 25°C 2 V TVJ = -40°C 2.6 V IGT VD = 6 V; T VJ = 25°C 150 mA TVJ = -40°C 200 mA VGD VD = 2/3VDRM;T VJ = TVJM 0.25 V IGD VD = 2/3VDRM;T VJ = TVJM 10 mA IL TVJ = 25°C; VD = 6 V; tP = 30 µs 200 mA diG/dt = 0.45 A/µs; IG = 0.45 A IH TVJ = 25°C; VD = 6 V; RGK = ∞ 150 mA tgd TVJ = 25°C; VD = 1/2 VDRM 2µ s diG/dt = 0.5 A/µs; I G = 0.5 A tq TVJ = TVJM; VR = 100 V; VD = 2/3VDRM; tP = 200 µs typ. 150 µs dv/dt = 20 V/µs; IT = 160 A; -di/dt = 10A/µs QS TVJ = TVJM 550 µC IRM -di/dt = 50 A/µs; IT = 300 A 235 A RthJC per thyristor; DC current 0.155 K/W per module 0.078 K/W R thJK per thyristor; DC current 0.225 K/W per module 0.113 K/W dS Creeping distance on surface 12.7 mm dA Creepage distance in air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Dimensions in mm (1 mm = 0.0394") Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1 Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time 100 150 200 250 300 350 400 450 500 IT, IF VT, VF V A TVJ = 25°C TVJ = 125°C Fig 3: Forward current vs. voltage drop per thyristor/diode
© 2005 IXYS All rights reserved 3 - 3 MCC 161 MCD 161 0540 0 25 50 75 100 125 ms IFAVM, ITAVM TA Ptot 0 100 200 300 400 200 400 600 800 1000 1200 1400 1600 1800 2000 C W A Ptot IDAVM TA RthKA K/W 0.02 0.04 0.06 0.1 0.15 0.20 0.30 0 50 100 150 200 250 120 160 200 240 280 320 360 400 s 0 25 50 75 100 125 A 0.001 0.01 0.1 1 1000 2000 3000 4000 5000 6000 t TVJ = 45°C TVJ = 125°C 11 0 104 105 106 I2t t A2s TVJ = 45°C TVJ = 125°C TC 0 2 55 07 5 1 0 0 1 2 5 100 150 200 250 300 350 A ITAVM, 180° sin DC 120° rect 60° rect 30° rect W t ZthJC 10-3 10-2 10-1 100 101 102 0.0 0.1 0.2 0.3 K/W s DC 180° 120° 60° 30° A C RthKA K/W 0.1 0.2 0.3 0.5 0.8 1.5 DC 180° sin 120° rect 60° rect 30° rect IFAVM 80% VRRM 50 Hz ITSM, IFSM Fig. 4: Surge overload current ITSM, IFSM = f(t) Fig. 5: I 2t versus time per diode Fig. 6: Max. forward current at case temperature ITAVM/FAVM = f (TC,d) Fig. 7: Power dissipation vs. on-state current and ambient temperature (per thyristor/diode) Fig. 8: Power dissipation vs. direct output current and ambient temperature (three phase rectifier bridge) Fig. 9: Transient thermal impedance junction to case Z thjC at various conduction angles Constants for ZthJC calculation (DC): iR thi (K/W) t i (s) 1 0.012 0.00014 2 0.008 0.019 3 0.03 0.18 4 0.073 0.52 5 0.032 1.6 RthJC for various condition angles: dR thJC (K/W) DC_ 0.155 180° 0.171 120° 0.184 60° 0.222 30° 0.294