MCC132 IXYS | Alldatasheet

Document overview

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Technical content

Features

G International standard package G Direct copper bonded Al2O 3 -ceramic base plate G Planar passivated chips G Isolation voltage 3600 V~ G UL registered, E 72873 G Keyed gate/cathode twin pins

Applications

G Heat and temperature control for industrial furnaces and chemical processes G Lighting control G Contactless switches Advantages G Space and weight savings G Simple mounting G Improved temperature and power cycling G Reduced protection circuits MCC 132 MCD 132 Thyristor Modules Thyristor/Diode Modules MCD MCC 36 7 1 5 4 2 31 5 4 2 3 6 7 5 4 032

© 2000 IXYS All rights reserved 2 - 4 Symbol Test Conditions Characteristic Values IRRM , IDRM TVJ = TVJM ; VR = VRRM ; VD = VDRM 10 mA VT, VF IT, IF = 300 A; TVJ = 25/G176C 1.36 V VT0 For power-loss calculations only (TVJ = 125/G176C) 0.8 V rT 1.5 m /G87 VGT VD = 6 V; T VJ = 25/G176C 2.5 V TVJ = -40/G176C 2.6 V IGT VD = 6 V; T VJ = 25/G176C 150 mA TVJ = -40/G176C 200 mA VGD TVJ = TVJM ;V D = 2/3 VDRM 0.2 V IGD 10 mA IL TVJ = 25/G176C; tP = 30 /G109s; VD = 6 V 300 mA IG = 0.5 A; diG /dt = 0.5 A//G109s IH TVJ = 25/G176C; VD = 6 V; RGK =/G32/G165 200 mA tgd TVJ = 25/G176C; VD = 1/2 VDRM 2 /G109s IG = 0.5 A; diG /dt = 0.5 A//G109s tq TVJ = TVJM ; IT = 160 A, tP = 200 /G109s; -di/dt = 10 A//G109s typ. 150 /G109s VR = 100 V; dv/dt = 20 V//G109s; VD = 2/3 VDRM Q S TVJ = TVJM ; IT, IF = 300 A, -di/dt = 50 A//G109s 550 /G109C IRM 235 A R thJC per thyristor/diode; DC current 0.23 K/W per module other values 0.115 K/W R thJK per thyristor/diode; DC current see Fig. 8/9 0.33 K/W per module 0.165 K/W d S Creepage distance on surface 12.7 mm dA Strike distance through air 9.6 mm a Maximum allowable acceleration 50 m/s 2 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = yellow, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 1385, Type ZY 180R (R = right for pin pair 6/7) CSA class 5851, guide 460-1-1Dimensions in mm (1 mm = 0.0394") MCC MCD Fig. 1 Gate trigger characteristics Fig. 2 Gate trigger delay time MCC 132 MCD 132

© 2000 IXYS All rights reserved 3 - 4 Fig. 4 i2t versus time (1-10 ms) Fig. 4a Maximum forward current at case temperature Fig. 5 Power dissipation versus on- state current and ambient temperature (per thyristor or diode) Fig. 6 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature MCC 132 MCD 132 Fig. 3 Surge overload current ITSM , IFSM : Crest value, t: duration s t ms t 0.001 0.01 0.1 1 1000 2000 3000 4000 11 0 104 105 106 A2s ITSM A i2t TVJ = 45°C TVJ = 125°C 80 % VRRM TVJ = 45°C 50 Hz TVJ = 125°C

© 2000 IXYS All rights reserved 4 - 4 Fig. 7 Three phase AC-controller: Power dissipation versus RMS output current and ambient temperature Fig. 8 Transient thermal impedance junction to case (per thyristor or diode) Fig. 9 Transient thermal impedance junction to heatsink (per thyristor or diode) MCC 132 MCD 132 R thJC for various conduction angles d: d R thJC (K/W) DC 0.230 180/G176 0.244 120/G176 0.255 60/G176 0.283 30/G176 0.321 Constants for ZthJC calculation: iR thi (K/W) t i (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4R thJK for various conduction angles d: d R thJK (K/W) DC 0.330 180/G176 0.344 120/G176 0.355 60/G176 0.383 30/G176 0.421 Constants for ZthJK calculation: iR thi (K/W) t i (s) 1 0.0095 0.001 2 0.0175 0.065 3 0.203 0.4 4 0.1 1.29