MCB60I1200TZ IXYS | Alldatasheet

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© 2016 IXYS All rights reserved 1 - 4 20160715 MCB60I1200TZ IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e SiC Power MOSFET Features / Advantages:

  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Avalanche ruggedness
  • Resistant to latch-up Package: TO-268AA (D3Pak-HV)
  • Industry standard outline
  • RoHS compliant
  • Epoxy meets UL 94V-0
  • High creepage distance between terminals Part number MCB60I1200TZ Applications:
  • Solar inverters
  • High voltage DC/DC converters
  • Motor drives
  • Switch mode power supplies
  • UPS
  • Battery chargers
  • Induction heating ID25 = 90 A VDSS = 1200 V RDS(on) max = 34 mΩ D (4) S (3) G (1) Backside: Drain G S D Single MOSFET Terms & Conditions of usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be consi- dered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact the sales office, which is responsible for you. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you. Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.

© 2016 IXYS All rights reserved 2 - 4 20160715 MCB60I1200TZ IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e MOSFET Ratings Symbol Definitions Conditions min. typ. max. VDSS drain source breakdown voltage 1200 V VGSM VGS max transient gate source voltage continous gate source voltage recommended operational value -10 +25 +20 V V ID25 ID80 ID100 drain current T C = 25°C T C = 80°C T C = 100°C A A A RDSon static drain source on resistance ID = 50 A; VGS = 20 V TVJ = 25°C T VJ = 150°C T VJ = 175°C 34 mΩ mΩ mΩ VGS(th) gate threshold voltage ID = 15 mA; VDS = 10 V TVJ = 25°C TVJ = 175°C 2.0 2.6 2.1 4.0 V V IDSS drain source leakage current VDS = 1200 V; VGS = 0 V TVJ = 25°C 2 100 µA IGSS gate source leakage current VDS = 0 V; VGS = 20 V TVJ = 25°C 0.6 µA RG internal gate resistance 1.1 Ω Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C 2790 220 pF pF pF Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VDS = 800 V; ID = 50 A; VGS = -5/20 V TVJ = 25°C 160 nC nC nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching VDS = 800 V; ID = 50 A TVJ = 25°C VGS = -5/20 V; RG = 2 Ω (external) ns ns ns ns mJ mJ mJ RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup 1) 0.38

0.27 K/W

1) part is mounted directly on heat sink Source-Drain Diode Ratings Symbol Definitions Conditions min. typ. max. IS25 IS100 continuous source current VGS = -5 V TC = 25°C T C = 80°C A A VSD forward voltage drop IF = 25 A; VGS = -5 V TVJ = 25°C T VJ = 175°C 4.0 3.5 V V trr QRM IRM reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current VGS = -5 V; IF = 50 A TVJ = 25°C VR = 800 V; -diF /dt = 1000 A/µs 410 13.5 ns nC A

© 2016 IXYS All rights reserved 3 - 4 20160715 MCB60I1200TZ IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e Package TO-268AA (D3Pak-HV) Ratings Symbol Definitions Conditions min. typ. max. Unit IRMS RMS current per terminal A Tstg Top TVJ storage temperature operation temperature virtual junction temperature -40 -40 -40 150 150 175 Weight 4 g FC mounting fource with clip 20 120 Nm dSpp/App dSpb/Apb creepage distance on surface | striking distance through air terminal to terminal terminal to backside 9.4 5.6 mm mm Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MCB60I1200TZ MCB60I1200TZ Tube 30 515522 Product Marking Date Code Part No. Logo abcd IXYS Assembly Code Assembly Line Zyyww Part number M = Mosfet C = SiC MOSFET B = Generation 2 60 = Current Rating [A] I = Single Mosfet 1200 = Reverse Voltage [V] TZ = TO-268AA (D3Pak) (2HV)

© 2016 IXYS All rights reserved 4 - 4 20160715 MCB60I1200TZ IXYS reserves the right to change limits, test conditions and dimensions. t e n t a t i v e Outlines TO-268AA (D3Pak-HV) min max min max A 4.90 5.10 0.193 0.201 A1 2.70 2.90 0.106 0.114 A2 0.02 0.25 0.001 0.010 b 1.15 1.45 0.045 0.057 C 0.40 0.65 0.016 0.026 C2 1.45 1.60 0.057 0.063 D 13.80 14.00 0.543 0.551 D1 11.80 12.10 0.465 0.476 D2 7.50 7.80 0.295 0.307 D3 2.90 3.20 0.114 0.126 E 15.85 16.05 0.624 0.632 E1 13.30 13.60 0.524 0.535 e 5.450 BSC 0.215 BSC H 18.70 19.10 0.736 0.752 L 1.70 2.00 0.067 0.079 L2 1.00 1.15 0.039 0.045 L3 0.250 BSC 0.010 BSC L4 3.80 4.10 0.150 0.161 Dim. Millimeter Inches D (backside) S G G S D; backside