MCB20P1200LB IXYS | Alldatasheet

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© 2022 IXYS All rights reserved 1 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified Part number MCB20P1200LB Package: SMPD

  • DCB isolated backside
  • Isolation Voltage 2500 V
  • Epoxy meets UL 94V-0
  • RoHS compliant
  • Advanced power cycling SiC Power MOSFET ID25 = 25.5 A VDSS = 1200 V RDS(on) max = 98 mΩ Features / Advantages:
  • High speed switching with low capacitances
  • High blocking voltage with low RDS(on)
  • Easy to parallel and simple to drive
  • Resistant to latch-up
  • Real Kelvin source connection Applications:
  • Solar inverters
  • High voltage DC/DC converters
  • Motor drives
  • Switch mode power supplies
  • UPS
  • Battery chargers
  • Induction heating E72873 3 2 1 Isolated surface to heatsink 6 5 4 5 9 Disclaimer Notice Information furnished is believed to be accurate and reliable. However, users should independently evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for, and may not be used in, all applications. Read complete Disclaimer Notice at www.littelfuse.com/disclaimer-electronics.

© 2022 IXYS All rights reserved 2 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified Source-Drain Diode Ratings Symbol Definitions Conditions min. typ. max. VSD forward voltage drop IF = 10 A; VGS = -5 V TVJ = 25°C T VJ = 150°C 3.3 3.1 V V trr QRM IRM dIF/dt reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current current slew rate VGS = -5 V; IF = 20 A; VR = 800 V TVJ = 25°C Mosfet gate drive: VGS = -5 / 20 V; RG = 22 Ω 0.20 3650 ns µC A A/µs trr QRM IRM dIF/dt reverse recovery time reverse recovery charge (intrinsic diode) max. reverse recovery current current slew rate VGS = -5 V; IF = 20 A; VR = 800 V TVJ = 150°C Mosfet gate drive: VGS = -5 / 20 V; RG = 22 Ω 0.42 4120 ns µC A A/µs Note: When using SiC Body Diode the maximum recommended VGS = -5V MOSFET Ratings Symbol Definitions Conditions min. typ. max. VDSS drain source breakdown voltage VGS = 0 V, ID = 100 µA 1200 V VGSM VGS max transient gate source voltage continous gate source voltage recommended operational value -10 +25 +20 V V ID25 ID80 ID100 drain current T C = 25°C VGS = 20 V TC = 80°C T C = 100°C 25.5 20.5 A A A RDSon static drain source on resistance ID = 50 A; VGS = 20 V TVJ = 25°C T VJ = 175°C 155 98 mΩ mΩ VGS(th) gate threshold voltage ID = 5 mA; VGS = VDS TVJ = 25°C TVJ = 175°C 2.0 2.6 2.1 4.0 V V IDSS drain source leakage current VDS = 1200 V; VGS = 0 V TVJ = 25°C 2 100 µA IGSS gate source leakage current VDS = 0 V; VGS = 20 V TVJ = 25°C 250 nA RG internal gate resistance f = 1 MHz, VAC = 25 mV, ESR of CISS 4.6 Ω Ciss Coss Crss input capacitance output capacitance reverse transfer (Miller) capacitance VDS = 1000 V; VGS = 0 V; f = 1 MHz TVJ = 25°C 950 7.6 pF pF pF Qg Qgs Qgd total gate charge gate source charge gate drain (Miller) charge VDS = 800 V; ID = 40 A; VGS = -5/20 V TVJ = 25°C nC nC nC td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching VDS = 800 V; ID = 20 A TVJ = 25°C VGS = -5 / 20 V; RG = 22 Ω (external) Freewheeling diode is Mosfet's body diode 0.41 0.21 0.07 ns ns ns ns mJ mJ mJ td(on) tr td(off) tf Eon Eoff Erec(off) turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse reverse recovery losses at turn-off Inductive switching VDS = 800 V; ID = 20 A TVJ = 150°C VGS = -5 / 20 V; RG = 22 Ω (external) Freewheeling diode is Mosfet's body diode 0.49 0.20 0.10 ns ns ns ns mJ mJ mJ RthJC RthJH thermal resistance junction to case thermal resistance junction to heatsink with heatsink compound; IXYS test setup 1.5

1.0 K/W

© 2022 IXYS All rights reserved 3 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified XXXXXXXXXX yywwZ Part number Date code Backside DCB Pin 1 identifier UL Digits 1 to 19: Part # 20 to 23: Date Code 24 to 25: Assembly line 26 to 31: Lot # 32: Split Lot 33 to 36: Individual # ~ ~ ~ Location 2D Barcode Package SMPD Ratings Symbol Definitions Conditions min. typ. max. IRMS RMS current wide terminal standard terminal 100 A A Tstg Top TVJ storage temperature opertation temperature virtual junction temperature -55 -55 -55 150 150 175 Weight 8 g FC mounting force with clip 40 130 N d Spp/App d Spb/Apb creepage distance on surface / striking distance through air terminal to terminal 1.6 mm terminal to backside 4.0 mm VISOL isolation voltage t = 1 second t = 1 minute 50/60 Hz; RMS; IISOL < 1 mA 3000 2500 V V Ordering Part Name Marking on Product Delivering Mode Base Qty Ordering Code Standard MCB20P1200LB-TUB MCB20P1200LB Tube 20 MCB20P1200LB-TUB Alternative MCB20P1200LB-TRR MCB20P1200LB Tape&Reel 200 MCB20P1200LB-TRR Part number M = Mosfet C = SiC MOSFET B = Generation 2 20 = Current Rating [A] P = Phase leg 1200 = Reverse Voltage [V] LB = SMPD-B

© 2022 IXYS All rights reserved 4 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified 1236 5 4 987 32,7 0,5 2 0,05(3x) 18 0,1 2,75 0,1 5,5 0,1 13,5 0,1 16,25 0,1 19 0,1 25 0,2 0,5 0,1 9 0,1 0,2 1 0,05(6x) 5,5 0,12) A 0,55 0,1 4 0,05 4,85 0,2 0,2 0,05 A ( 8 : 1 ) 0 0,15+ 0,1 seating plane Pin number Notes: 1) potrusion may add 0.2 mm max. on each side 2) additional max. 0.05 mm per side by punching misalignement or overlap of dam bar or bending compression 3) DCB area 10 to 50 µm convex; position of DCB area in relation to plastic rim: ±25 µm (measured 2 mm from Cu rim) 4) terminal plating: 2 - 6 µm Ni + 10 - 25 µm Sn (galv.) cutting edges may be partially free of plating Outlines SMPD-B Dimensions in mm (1 mm = 0.0394“) 5 9

© 2022 IXYS All rights reserved 5 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified 0123456789 1 0 0 10 20 30 40 50 100 125 150 175 200 225 0123456789 1 0 V DS [V] ID [A] TVJ [°C] R DS(on) normalized 0123456789 1 0 -25 0 25 50 75 100 125 150 175 0.0 0.5 1.0 1.5 2.0 2.5 -25 0 25 50 75 100 125 150 175 100 125 150 175 200 225 Fig. 1 Typical output characteristics (-25°C) V DS [V] Fig. 2 Typical output characteristics (25°C) ID [A] Fig. 3 Typical output characteristics (150°C) V DS [V] Fig. 4 R DS(on) normalized vs. junction temperature T VJ Fig. 5 R DS(on) versus drain current Fig. 6 R DS(on) versus junction temperature T VJ TVJ [°C]IDS [A] ID [A] 20 A R DS(on) [mOhm] R DS(on) [mOhm] T VJ = -25°C V GS = 10 V 12 V 14 V

16 V18 V20 V

T VJ = 25°C

20 V 18 V 16 V 14 V

V GS = 10 V T VJ = 150°C V GS = 10 V 12 V V GS = 20 V V GS = 20 V -25°C 25°C I D = 20 A I D = 40 A T VJ = 150°C 20 V 18 V 16 V 14 V V GS = 14 V 16 V 18 V 20 V Curves

© 2022 IXYS All rights reserved 6 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified -25 0 25 50 75 100 125 150 175 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.50 1.75 2.00 2.25 2.50 2.75 3.00 -70 -60 -50 -40 -30 -20 -10 0123456789 1 0 1 1 1 2 1 3 1 4 1 5 TVJ [°C] VDS [V] IDS [V] 0 5 10 15 20 25 30 35 40 -70 -60 -50 -40 -30 -20 -10 -70 -60 -50 -40 -30 -20 -10 Fig. 7 Norm. breakdow V DSS & treshhold voltage V TH versus junction temperature T VJ VGS [V] Fig. 8 Typical transfer characteristics gfs [S] Fig. 9 Typical forward transconductance ID [A] Fig. 10 Forward voltage drop of intrinsic diode versus V DS measured at -55°C Fig. 11 Forward voltage drop of intrinsic diode versus V DS measured at 25°C Fig. 12 Forward voltage drop of intrinsic diode versus V DS measured at 150°C VDS [V]VDS [V] ID [A] -2 V -5 V VDSS normalized IDS [V] -2 V -5 V IDS [V] -2 V -5 V I DSS = 0.1 mA I DSS = 5 mA 25°C -55°C V DS = 20 V 150°C 25°C T VJ = -55°C V GS = 0 V T VJ = 150°CT VJ = 25°C V GS = 0 V V GS = 0 V T VJ = 150°C T VJ = -55°C VTH [V] V DSS V TH Curves

© 2022 IXYS All rights reserved 7 - 7 20220127c MCB20P1200LB IXYS reserves the right to change limits, test conditions and dimensions. Data according ot IEC 60747 and per semiconductor unless otherwise specified E rec t d(off) E on E off E on E rec E off E on t d(on) t f t r 20 40 60 80 100 120 140 160 0.0 0.2 0.4 0.6 0.8 1.0 12 16 20 24 28 32 36 0.0 0.2 0.4 0.6 TVJ [°C] E [mJ] 12 16 20 24 28 32 36 100 E [mJ] Fig. 13 Typical switching energy versus drain current ID [A] Fig. 14 Typical switching energy versus temperature Fig. 15 Typical switching energy versus external gate resistor Fig. 16 Typical switching time versus external gate resistor R G [Ohm]RG [Ohm] E [mJ] t [ns] 0 5 10 15 20 25 30 35 40 0.0 0.4 0.8 1.2 1.6 tp [ms] 0 10 20 30 40 50 60 70 Q G [nC] Fig. 17 Typical turn on gate charge, trendline Fig. 18 Typical transient thermal impedance Z th jh [K/W] VGS [V] I D = 20 A T VJ = 25°C V DS = 800 V I GS = 10 mA I D = 20 A T VJ = 150°C V DS = 800 V V GS = -5/20 V I D = 20 A T VJ = 150°C V DS = 800 V V GS = -5/20 V E rec x10 x10 1 10 100 1000 10000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 E off R G = 22 Ohm T VJ = 150°C V DS = 800 V V GS = -5/20 V R G = 22 Ohm V DS = 800 V V GS = -5/20 V I D = 20 A Curves