M2716

M2716 INTEL | Alldatasheet

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intel’ M2716/M2716M 16K (2K x 8) UV ERASABLE PROM Military @ Military Temperature Range @ Static Standby Mode wee fens 10 ee (Te) m Low Power Dissipation of 165 mW : io (Te) Maximum Standby Power m 5V 410% Voc i Inputs and Outputs TTL Compatible @ Pin Compatible to Intel’s M2732A 32K During Read and Program EPROM Not Recommended for New Designs m Fast Access Time: 450 ns Maximum The Intel M2716M and M2716 are 16,384-bit ultraviolet erasable and electrically programmable read only memories (EPROMS) specified over the military extended temperature range respectively. They operate from a single +5V power supply, have a static power-down mode, and feature fast, single-address location pro- gramming. It makes designing with EPROMS faster, easier and more economical. Both products are manufac- tured from the same dice. Except for the operating temperature range, both products have the same electrical and programming specifictions. The M2716/M2716M has a static standby mode which reduces the power dissipation without increasing access time. The active power dissipation is reduced by over 60% in the standby power mode. Both are pin compatible to Intel's 32K military EPROM, the M2732A. ‘The M2716/M2716M has the simplest and fastest method devised yet for programming EPROMs—single pulse TTL level programming. No need for high voltage pulsing because all programming controls are handled by TTL signals. Program any location at any time—either individually, sequentially or at random, with the M2716's single-address location programming. Total programming time for all 16,384 bits is only 100 seconds. Raat ote eee ee ee ee ee Block Diagram veco—~ aca Pin Configurations “oe M2716 M2732A a ade Vb. adi Yabv.. 7 a) ov) al ade po, Ae tro. ecboen cide spor ete sBo, ed: = wpe. ott abso. onodiz spo, onoiz__ sao, 271008-3 271006-1 (271006-2 Mode Selection Pin Names aS Sse] || ae 4 a [Reed | Mu | Ou [5148 [ on | [OE | Ouputenabio | [Standby | Vin _[Dontcae| +5 [ +5[ 7 Honz | [Os-Or [Outs id [Program [Pulsed Via toVn[ Vm | +25[ +8] Ow | {Programinnit] Va [vm [25] +s [ Hanz a December 1989 TA Order Number: 271006-003

ABSOLUTE MAXIMUM RATINGS* NOTICE: This is a production data sheet. The specifi- a - cations are subject to change without notice. Case Temperature Under Bias...—65°C to + 195°C aon. Siessing tho dove ‘he ‘AbSolle Al Input or Output Voltages with These are stress ratings only. Operation beyond the Vpp Supply Voltage with Respect pe ee cevke cleus CPerating Conditions D.C. AND A.C. OPERATING CONDITIONS Case Temperature (instant On) D.C. CHARACTERISTICS men | tenet ae | Oe | commons | | tmputtoad current | | | tow | = 55v | | to | OuiputLeakageCurent | | | to TA | Vou =55v | | twev® | vppCurent | | TT mA | Vp =v | | tccv® | VocCurrent(Standty) | | to | 30 | ma | CE=VnOE= Vi | [vu | inputowVottage | -o1 | | os Tv TO [vy | InputHighVoitage | 20 [| vocti | vw [| [Vor | Ouiputtowvoitage | || Tv tg = 2tma [Vou | OutputHighVoitage | 24 TT Tv ton = 400A | NOTES: 1. Veg must be applied simultaneously or before Vpp and removed simultaneously or after Vpp. 2. Vpp can be connected directly to Voc except during programming. The supply current will then be the sum of Ioc and s i ©. 3 typical values are for To = 25°C and nominal supply voltages. TYPICAL CHARACTERISTICS Icc Current vs. Temperature Access Time vs. Capacitance Access Time vs. Temperature . wo we Hustataazay Peissesueea eisresssvers COEOSSCOCr p= Ly) Seer ° Sy i CEE = i. HH Hee x] TET gett Te |_| esCTT Py TREC 7 PE | Coo Cc} = COE EET Ske eT HEE EH “eee COOPT TT ee SLEIE TEE) cee 0-40-20 0 2% © & B 100 1% 40 0 100 200 300 400 S00 800 TOD one -00-40-20 0 2 © © 8 10 120 40 vurcrne 2 rewrenaneet oO zrivos-4

A.C. CHARACTERISTICS [sim] rarer a Typ) || commen | Address to Output Delay [aso ns [CE = OF = vi [toe [OutputénabietoOuputdely ||| t50 | ns [OE=V [tor [OutputEnabieHightoOuputFioat| 0 || 90 | ns [OE= Vn ‘Output Hold from Addresses, CE or CE=0F= ML OE Whichever Occurred First CAPACITANCE Tc = 25°C, § = 1 MHz [-symbor [Parameter | Typ | Max | Units | Conditions | Lon | woutcanestrce | «| 6 | oF | vw=ov | Output capectrcs |e | 2 | oF | Vour= 0 | Ri Fall vo cceeeteceeees€ 20 AMPUS oo. ee eeeeeceeeeeeeeeeees Vand 2V Input Rise and Fall Times MS outputs I o.v and 2v A.C. TESTING, OUTPUT WAVEFORM AC. TESTING LOAD CIRCUIT ww “ = = K me “ 7 “ Ea od 271006-7 . ‘AG. Testing: Inputs are driven at 2.4V for a Logic “1” and 0.45V T* wor fora Logeo" Ting Measurements bro made a 20V for 8 a (ale “tend 0.8V lore Lone “0 sri0e-8 Cy = 100 pF Bind ne

A.C. WAVEFORMS(5) Ap RESsES avonesses a ca = soveesenes “oka ote — cain) to st cy won 2 nigh z ourur vaup our] 271008-5 NOTES: 1. Voc must be applied simultaneously or before Vpp and removed simultaneously or after Vpp. 2. Vpp can be connected directly to Voc except during programming. The supply current will then be the sum of log and lppi. 3. Typical values are for Tc = 25°C and nominal supply voltages. 4. All times shown in paraentheses are minimum and are nsec unless otherwise specified. 5. OE may be delayed up to tacc—toe after the falling edge of CE without impact on taco. 6. Output Float is defined as the point where data is no longer driven. DEVICE OPERATION Read Mode The five modes of operation of the M2716 are listed The M2716 has two contro! functions, both of which in Table 1. It should be noted that all inputs for the must be logically satisfied in order to obtain data at five modes are at TTL levels. The power supplies —_the outputs. Chip Enable (CE) is the power contro! required are a + 5V Vcc and a Vpp. The Vpp power and should be used for device selection. Output En- supply must be at 25V during the three programming —_ able (OE) is the output contro! and should be used modes, and must be at 5V in the other two modes. to gate data to the output pins, independent of de- Mode Selection CE/PGM Outputs (18) (9-11, 13-17) Stancby | Vw (| OontGare| +5 [+5 | Hinz | PuisedVutoVn[ Vn [+25 | +s Ow | Program Verity Program Inhibit 7-4

vice selection. Assuming that addresses are stable, The M2716 is in the programming mode when the address access time (tacc) is equal to the delay Vpp power supply is at 25V and is at Vin. The from CE to output (tc¢). Data is available at the out- data to be programmed is applied 8 bits in parallel to puts 150 ns ce) after the falling edge ot OE, as- —_the data output pins. The levels required for the ad- suming that CE has been low and addresses have —_dress and data inputs are TTL. been stable for at least tacc— tog. When the address and data are stable, a 50 ms, active high, TTL program pulse is applied to the CE Standby Mode input. A program pulse must be applied at each ad- dress location to be programmed. You can program The M2716 has a standby mode which reduces the —_any location at any time—either individually, sequen- active power dissipation by 75%, from 633 mW to tially or at random. The program pulse has a maxi- 165 mW. The M2716 is placed in the standby mode mum width of 55 ms. The M2716 must not be pro- by applying a TTL high special to the CE input. When grammed with a DC signal applied to the CE input. in standby mode, the outputs are in a high imped- ance state, independent of the OE input. Programming of multiple M2716's in parallel with the same data can be easily accomplished due to the simplicity of the programming requirements. Like in- Output Or-Tieing puts of the paralleled M2716’s may be connected together when they are programmed with the same Because M2716’s are usually used in larger memory data, A high level TTL pulse applied to the CE input arrays, Intel has provided a 2 line control function —_ programs the paralleled M2716's. that accommodates this use of multiple memory connections. The two line contro! function allows for a) the lowest possible memory power dissipa- © Program Inhibit tion, and, Programming of multiple M2716's in parallel with dif- ») complete assurance that output bus conten- ferent data is also easily accomplished. Except for tion will nbt occur. CE, all like units (including OE) of the parallel bei .. 5, M2716'’s may be common. A TTL level program To most efficiently use these two control lines, it 8 Bulge applied to a M2716's CE input with Vpp at 25V recommended that CE (pin 18) be decoded and wii program that M2716. A low level CE input inhib- used as the primary device selecting function, while Prog! " p oe re its the other M2716 from being programmed. (pin 20) be made a common connection to all devicas in the array and connected to the READ line from the system contro! bus. This assures that all deselected memory devices are in their low power Program Verify standby mode and that the output pins are only ac- i five wh Gale dasrod tom a parteular mamory Orly should be performed on the programmed device. grammed. The verity may be performed with Vpp at 25V. Except during programming and program veri- fy, Vpp must be at 5V. 7 Programming Initially, and after each erasure, all bits of the M2716 are in the “1” state. Data is introduced by selectively DEVICE RELIABILITY programming “0's” into the desired bit locations. Al The M2716 is built on a proven 2 layer polysilicon though only “0's” will be programmed, both “1's” NMOS technology. Extensive testing and monitoring and “0's” can be presented in the data word. The —_ has allowed us to achieve failure rates equal to other only way to change a "0" to a “1” is by untraviolet memory devices. light erasure.

PROGRAMMING CHARACTERISTICS D.C. PROGRAMMING CHARACTERISTICS To = 25°C £8°C, Vogl") = BV +6%, Vpplt.2) = 25V +1V [symbor [Parameter | min | Typ | Max | unite | Comments | [tr | mmputcurent or Anyinpuy [|| 10 | mA | Viv = 5.25V0r0.45v | [tee | Ver SuppyCurent [||| | ma | EM femme | TT Tl] Programming Pulse [to | VeoSuppyCurent ||| too | mm [| [vn _[ tnputtowtever | -on [| oe [ov | [vm [inputtignueve | 20 [ [voces tv [| A.C. PROGRAMMING CHARACTERISTICS To = 25°C £5°C, Vocl!) = 5V 5%, Vpplt.2) = 25V +1V [‘symbot [Parameter | tin_ | Typ | Max | units | Comments | [us | Addresssowptime | 2 | [| ws | [toes | OEsouptime | 2 | TT os | [tos [Datasewptime | 2 | TT ws | [wn | AddressHogtime | 2 | TT ws | [ton | OEodTime |e TT ns TO [ton | Datatoidtime | 2 [TT os TT [tore | OutputEnabletoOurputFioat Delay | 0 | | 200 | ns [ ce=vu | [toc | OuputtnabietoOuputDeiay ||| 200 | ns | CE=vn | [ew | ProgamPusewatn | a5 | 60 | 65 | ms | | [ter | ProgramPuserisetime | 5 | [| | ons | | [torr | ProoramPuseraitime | 5 | [| | ns | | A.C. CONDITIONS OF TEST 1. Voc must be applied simultaneously or before Vpp and ‘exceeding this 26V maximum specification. 7-6

wme Kom | CX Mu aw SHEDS . ie aH ue _— rd Yu ton te 5 Tt) ™ tg, fom Mw a 7 . sr0-0 NOTES: 1. All times shown in parenthesis are minimum times and are 1s unless otherwise noted. 2. tog and torp are characteristics of the device but must be accommodated by the programmer. 7-7