L558 IXYS | Alldatasheet

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Features

 NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching  FRED diodes - fast reverse recovery - low forward voltage  Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Typical Applications  AC drives  power supplies with power factor correction IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 19 A IC80 TC = 80°C 14 A ICM VGE = ±15 V; RG = 82 Ω ; TVJ = 125°C 20 A VCEK RBSOA, Clamped inductive load; L = 100 µH V CES tSC VCE = 720 V; VGE = ±15 V; RG = 82 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 73 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 10 A; VGE = 15 V; TVJ = 25°C 1.9 2.4 V TVJ = 125°C 2.2 V VGE(th) IC = 0.35 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES ;V GE = 0 V; TVJ = 25°C 0.6 mA TVJ = 125°C 2.7 mA IGES VCE = 0 V; VGE = ± 20 V 100 nA td(on) 35 ns tr 35 ns td(off) 230 ns tf 30 ns Eon 0.4 mJ Eoff 0.3 mJ C ies VCE = 25 V; VGE = 0 V; f = 1 MHz 600 pF Q Gon VCE = 300 V; VGE = 15 V; IC = 10 A 39 nC R thJC (per IGBT) 1.7 K/W R thJH with heatsink compound (0.42 K/m.K; 50 µm) 3.4 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 10 A VGE = ±15 V; RG = 82 Ω IC25 = 19 A VCES = 600 V VCE(sat) typ.= 1.9 V IGBT Module Sixpack in ECO-PAC 2 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS Corporation

3540 Bassett Street, Santa Clara CA 95054

Phone: (408) 982-0700, Fax: 408-496-0670 www.ixys.net S 9 G 1 L 9 N 5 A 1 F 3 C 1 X 18 W 14 K 10 N 9 R 5 D 5 A 5 H 5 Pin arangement see outlines K 12 J 13 NTC Preliminary data

2 - 5© 2003 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. 308 VWI 20-06P1 Dimensions in mm (1 mm = 0.0394") Diodes Symbol Conditions Maximum Ratings IF25 TC = 25°C 21 A IF80 TC = 80°C 14 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 10 A; TVJ = 25°C 1.9 2.1 V TVJ = 125°C 1.4 V IRM IF = 10 A; diF/dt = -400 A/µs; TVJ = 125°C 11 A trr VR = 300 V; VGE = 0 V 80 ns R thJC 3.5 K/W R thJH with heatsink compound (0.42 K/m.K; 50 µm) 7.0 K/W Component Symbol Conditi ons Maximum Ratings TVJ -40...+150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz; t = 1 s 3600 V~ M d mounting torque (M4) 1.5 - 2.0 Nm 14 - 18 lb.in. a Max. allowable acceleration 50 m/s 2 Symbol Cond itions Characteristic Values min. typ. max. dS Creepage distance on surface (Pin to heatsink) 11.2 mm dA Strike distance in air (Pin to heatsink) 11.2 mm Weight 24 g Data according to IEC 60747 and refer to a single diode unless otherwise stated. Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R 25 T = 25°C 4.75 5.0 5.25 k Ω B 25/50 3375 K

3 - 5© 2003 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. 308 VWI 20-06P1 IGBT

4 - 5© 2003 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. 308 VWI 20-06P1 Transient thermal resistance junction to heatsink (ZthJH is measured using 50 µm thermal grease) IGBT ZthJH [K/W] 0.001 0.01 0.1 t (s) D = 0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 IGBT

5 - 5© 2003 IXYS All rights reserved IXYS reserves the right to change limits, test conditions and dimensions. 308 VWI 20-06P1 Transient thermal resistance junction to heatsink 200 600 10000 400 800 100 110 120 0 40 80 120 160 0.0 0.5 1.0 1.5 2.0 Kf TVJ -diF/dt 0 200 400 600 800 1000 0.0 0.3 0.6 0.9 1.2 VFR diF/dt V 200 600 10000 400 800 100 1000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IRMQ r IF A VF -diF/dt -diF/dt A/µs A V nC A/µs A/µs trr ns tfr A/µs µs IF= 20A IF= 10A IF= 5A TVJ= 100°C VR = 300V TVJ= 100°C IF = 10A Peak reverse current IRM versus -diF/dt Reverse recovery charge Qr versus -diF/dt Forward current IF versus VF TVJ= 100°C VR = 300V TVJ= 100°C VR = 300V IF= 20A IF= 10A IF= 5A Q r IRM Dynamic parameters Qr, IRM versus TVJ Recovery time trr versus -diF/dt Peak forward voltage V FR and tfr versus diF/dt IF= 20A IF= 10A IF= 5A tfr VFR TVJ=150°C TVJ=100°C TVJ= 25°C 8-06A (ZthJH is measured using 50 µm thermal grease) Fred ZthJH[K/W] 0.001 0.01 0.1 D = 0 D = 0.005 D = 0.01 D = 0.02 D = 0.05 D = 0.1 D = 0.2 D = 0.5 Diode