L486

L486 IXYS | Alldatasheet

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Technical content

Features

 NPT3 IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits  HiPerFRED TM diode: - fast reverse recovery - low operating forward voltage - low leakage current  Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Typical Applications  MWI - AC drives - power supplies with power factor correction  MKI - motor control . DC motor amature winding . DC motor excitation winding . synchronous motor excitation winding - supply of transformer primary winding . power supplies . welding . X-ray . battery charger IC25 = 165 A VCES = 1200 V VCE(sat) typ. = 2.0 V IGBT Modules Sixpack, H Bridge Short Circuit SOA Capability Square RBSOA 13, 21 14, 20 MWI IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 1200 V VGES ± 20 V IC25 TC = 25°C 165 A IC80 TC = 80°C 115 A ICM VGE = ±15 V; RG = 12 Ω; TVJ = 125°C 200 A VCEK RBSOA; clamped inductive load; L = 100 µH V CES tSC VCE = 900 V; VGE = ±15 V; RG = 12 Ω; TVJ = 125°C 10 µs SCSOA; non-repetitive Ptot TC = 25°C 640 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 100 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V TVJ = 125°C 2.3 V VGE(th) IC = 4 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES; VGE = 0 V; T VJ = 25°C 1.4 mA TVJ = 125°C 1.4 mA IGES VCE = 0 V; VGE = ± 20 V 400 nA td(on) 330 ns tr 15 ns td(off) 750 ns tf 45 ns Eon 12 mJ Eoff 10 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 7.4 nF QGon VCE = 600 V; VGE = 15 V; IC = 150 A 0.76 µC RthJC (per IGBT) 0.19 K/W Inductive load, TVJ = 125°C VCE = 600 V; IC = 100 A VGE = ±15 V; RG = 12 Ω MKI 13, 21 14, 20

© 2004 IXYS All rights reserved 2 - 4 MWI 100-12 E8 MKI 100-12 E8 448IXYS reserves the right to change limits, test conditions and dimensions. Equivalent Circuits for Simulation Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.95 V; R0 = 14 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 1.3 V; R0 = 7 mΩ Thermal Response IGBT (typ.) Cth1 = 0.389 J/K; Rth1 = 0.139 K/W Cth2 = 2.154 J/K; Rth2 = 0.051 K/W Free Wheeling Diode (typ.) Cth1 = 0.301 J/K; Rth1 = 0.24 K/W Cth2 = 2.005 J/K; Rth2 = 0.062 K/W Module Symbol Conditions Maximum Ratings TVJ operating -40...+125 °C TJM +150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 2.7 - 3.3 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 m Ω dS Creepage distance on surface 10 mm dA Strike distance in air 10 mm RthCH with heatsink compound 0.01 K/W Weight 300 g Diodes Symbol Conditions Maximum Ratings IF25 TC = 25°C 200 A IF80 TC = 80°C 130 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 100 A; VGE = 0 V; TVJ = 25°C 2.3 2.6 V TVJ = 125°C 1.7 V IRM IF = 120 A; diF/dt = -750 A/µs; TVJ = 125°C 58 A trr VR = 600 V; VGE = 0 V 190 ns RthJC (per diode) 0.3 K/W pins 5, 6, 7, 8 and 17 for MWI only Dimensions in mm (1 mm = 0.0394")

© 2004 IXYS All rights reserved 3 - 4 MWI 100-12 E8 MKI 100-12 E8 448IXYS reserves the right to change limits, test conditions and dimensions. 0 200 400 600 800 1000 100 150 200 250 300 012345 100 150 200 250 300 0 200 400 600 800 1000 012345 100 150 200 250 300 VCE V IC VCE A IC V nC QG -di/dt V VGE IRM trr A/µs MWI100-12E8 IRM trr A 9 V 11 V A 56789 1 0 100 150 200 250 300 V VGE A IC 0123 100 150 200 250 300 V VF IF A ns 15 V TVJ = 25°C 9 V 11 V 13 V VGE = 17 V TVJ = 125°C TVJ = 125°C TVJ = 25°C VCE = 20 V TVJ = 125°C TVJ = 25°C

13 VVGE = 17 V 15 V

TVJ = 125°C VR = 600 V IF = 120 A VCE = 600 V IC = 150 A Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode

© 2004 IXYS All rights reserved 4 - 4 MWI 100-12 E8 MKI 100-12 E8 448IXYS reserves the right to change limits, test conditions and dimensions. 0 50 100 150 200 100 200 300 400 0 50 100 150 200 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 0 5 10 15 20 250 500 750 1000 0 5 10 15 20 100 200 300 400 0 200 400 600 800 1000 1200 1400 100 150 200 250 Eoff td(off) Eoff td(off) IC A IC A EoffEon t t RG Ω RG Ω VCE t s mJ Eon mJ Eoff t ns t ICM K/W ZthJC V A mJ nsmJns tr Eon tr single pulse diode IGBT ns Eon MWI100-12E8 td(on) tf VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C VCE = 600 V VGE = ±15 V IC = 100 A TVJ = 125°C VCE = 600 V VGE = ±15 V RG = 12 Ω TVJ = 125°C VCE = 600 V VGE = ±15 V RG = 12 Ω TVJ = 125°C RG = 12 Ω TVJ = 125°C td(on) tf Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching times versus collector current times versus collector current Fig. 9 Typ. turn on energy and sw itching Fig.10 Typ. turn off energy and switching times versus gate resistor times versus gate resistor Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance RBSOA