L430

L430 IXYS | Alldatasheet

Document overview

• Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
• PDF pages: 4

Technical content

Features

• High level of integration - only one power semiconductor module required for the whole drive
• NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness
• Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery
• Industry standard package with insulated copper base plate and soldering pins for PCB mounting
• Temperature sense included NTC D11 D13 D15 D12 D14 D16 1 23 T1 D1 T3 D3 T2 T4 T6 D4 D2 D6 21 22 6 45 1023 12 13 Revision A 07.03.2001

© 2003 IXYS All rights reserved 2 - 4 Output Inverter T1 - T6 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES Continuous ± 20 V IC25 TC = 25°C 100 A IC80 TC = 80°C 65 A RBSOA VGE = ±15 V; RG = 15 Ω ; TVJ = 125°C I CM = 150 A Clamped inductive load; L = 100 µH V CEK ≤ VCES tSC VCE = VCES ; VGE = ±15 V; RG = 15 Ω ; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 320 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 75 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V TVJ = 125°C 2.3 V VGE(th) IC = 1.5 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES ; VGE = 0 V; TVJ = 25°C 1.4 mA TVJ = 125°C 1.5 mA IGES VCE = 0 V; VGE = ± 20 V 200 nA td(on) 150 ns tr 60 ns td(off) 450 ns tf 40 ns Eon 4.0 mJ Eoff 3.3 mJ C ies VCE = 25 V; VGE = 0 V; f = 1 MHz 4.2 nF Q Gon VCE = 300V; VGE = 15 V; IC = 75 A 180 nC R thJC (per IGBT) 0.39 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 75 A VGE = ±15 V; RG = 15 Ω Output Inverter D1 - D6 Symbol Conditions Maximum Ratings IF25 TC = 25°C 140 A IF80 TC = 80°C 85 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 75 A; VGE = 0 V; TVJ = 25°C 1.7 2.0 V TVJ = 125°C 1.2 V IRM IF = 60 A; diF/dt = -500 A/µs; TVJ = 125°C 28 A trr VR = 300 V; VGE = 0 V 100 ns R thJC (per diode) 0.61 K/W 312 MUBW 75-06 A8

© 2003 IXYS All rights reserved3 - 4 MUBW 75-06 A8 Brake Chopper T7 Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES Continuous ± 20 V IC25 TC = 25°C 50 A IC80 TC = 80°C 35 A RBSOA VGE = ±15 V; RG = 33 Ω; TVJ = 125°C ICM = 60 A Clamped inductive load; L = 100 µH VCEK ≤ VCES tSC VCE = VCES ; VGE = ±15 V; RG = 33 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 165 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 35 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V TVJ = 125°C 2.3 V VGE(th) IC = 0.7 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES ; VGE = 0 V; TVJ = 25°C 0.5 mA TVJ = 125°C 0.3 mA IGES VCE = 0 V; VGE = ± 20 V 200 nA td(on) 50 ns tr 50 ns td(off) 270 ns tf 40 ns Eon 1.63 mJ Eoff 1.17 mJ C ies VCE = 25 V; VGE = 0 V; f = 1 MH z 1.6 nF Q Gon VCE = 300 V; VGE = 15 V; IC = 25 A 94 nC R thJC 0.75 K/W Brake Chopper D7 Symbol Conditions Maximum Ratings VRRM TVJ = 25°C to 150°C 600 V IF25 TC = 25°C 35 A IF80 TC = 80°C 24 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 35 A; TVJ = 25°C 2.0 2.3 V TVJ = 125°C 1.5 V IR VR = VRRM ; TVJ = 25°C 0.1 mA TVJ = 125°C 0.1 mA IRM IF = 15 A; diF/dt = -400 A/µs; TVJ = 125°C 13 A trr VR = 300 V 90 ns R thJC 2.1 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 35 A VGE = ±15 V; RG = 33 Ω 312

© 2003 IXYS All rights reserved 4 - 4 Temperature Sensor NTC Symbol Conditions Characteristic Values min. typ. max. R 25 T = 25°C 4.75 5.0 5.25 k Ω B 25/50 3375 K Module Symbol Conditions Maximum Ratings TVJ operating -40...+125 °C TJM +150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ M d Mounting torque (M5) 3 - 6 Nm Symbol Conditions Characteristic Values min. typ. max. R pin-chip 5m Ω dS Creepage distance on surface 6 mm dA Strike distance in air 6 mm R thCH with heatsink compound 0.01 K/W Weight 300 g 312 MUBW 75-06 A8