L426

L426 IXYS | Alldatasheet

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Technical content

Features

 NPT IGBT technology  low saturation voltage  low switching losses  switching frequency up to 30 kHz  square RBSOA, no latch up  high short circuit capability  positive temperature coefficient for easy parallelling  MOS input, voltage controlled  ultra fast free wheeling diodes  solderable pins for PCB mounting  package with copper base plate Advantages  space savings  reduced protection circuits  package designed for wave soldering Typical Applications  AC motor control  AC servo and robot drives  power supplies IGBTs Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C 600 V VGES ± 20 V IC25 TC = 25°C 225 A IC80 TC = 80°C 155 A RBSOA VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C I CM = 400 A Clamped inductive load; L = 100 µH V CEK ≤ VCES tSC VCE = VCES; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C 10 µs (SCSOA) non-repetitive Ptot TC = 25°C 675 W Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) IC = 200 A; VGE = 15 V; TVJ = 25°C 2.0 2.5 V TVJ = 125°C 2.3 V VGE(th) IC = 4 mA; VGE = VCE 4.5 6.5 V ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 1.8 mA T VJ = 125°C 1.5 mA IGES VCE = 0 V; VGE = ± 20 V 400 nA td(on) 180 ns tr 50 ns td(off) 300 ns tf 40 ns Eon 4.6 mJ Eoff 6.3 mJ Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 9.0 nF QGon VCE = 300 V; VGE = 15 V; IC = 200 A 670 nC RthJC (per IGBT) 0.18 K/W Inductive load, TVJ = 125°C VCE = 300 V; IC = 200 A VGE = ±15 V; RG = 1.5 Ω IC25 = 225 A VCES = 600 V VCE(sat) typ.= 2.0 V IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA 13, 21 14, 20

© 2004 IXYS All rights reserved 2 - 4 MWI 200-06 A8 448 Module Symbol Conditions Maximum Ratings TVJ operating -40...+125 °C TJM +150 °C Tstg -40...+125 °C VISOL IISOL ≤ 1 mA; 50/60 Hz 2500 V~ Md Mounting torque (M5) 3 - 6 Nm Symbol Conditions Characteristic Values min. typ. max. Rpin-chip 1.8 m Ω dS Creepage distance on surface 10 mm dA Strike distance in air 10 mm RthCH with heatsink compound 0.01 K/W Weight 300 g Diodes Symbol Conditions Maximum Ratings IF25 TC = 25°C 260 A IF80 TC = 80°C 165 A Symbol Conditions Characteristic Values min. typ. max. VF IF = 200 A; VGE = 0 V; TVJ = 25°C 1.9 2.1 V TVJ = 125°C 1.5 V IRM IF = 120 A; diF/dt = -1000 A/µs; TVJ = 125°C 56 A trr VR = 300 V; VGE = 0 V 100 ns RthJC (per diode) 0.3 K/W Equivalent Circuits for Simulation Conduction IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 1.1 V; R0 = 6 mΩ Free wheeling Diode (typ. at TJ = 125°C) V0 = 1.1 V; R0 = 2 mΩ Thermal Response IGBT (typ.) Cth1 = 0.397 J/K; Rth1 = 0.131 K/W Cth2 = 2.243 J/K; Rth2 = 0.049 K/W Free wheeling Diode (typ.) Cth1 = 0.281 J/K; Rth1 = 0.236 K/W Cth2 = 1.945 J/K; Rth2 = 0.064 K/W Dimensions in mm (1 mm = 0.0394")

© 2004 IXYS All rights reserved 3 - 4 MWI 200-06 A8 448 0 200 400 600 800 1000 120 180 01234 100 150 200 250 300 0 100 200 300 400 500 600 700 01234 100 150 200 250 300 VCE V IC VCE A IC V QG -di/dt V VGE IRMtrr A/µs MWI200-06A8 IRM trr A 9 V 11 V A 6789 1 0 1 1 1 2 100 200 300 400 V VGE A IC 012 100 200 300 400 500 600 V VF IF A ns 15 V TVJ = 25°C 9 V

11 V13 VVGE = 17 V

TVJ = 125°C TVJ = 25°C VCE = 20 V TVJ = 125°C TVJ = 25°C

13 VVGE = 17 V

TVJ = 125°C VR = 300 V IF = 120 A TVJ = 125°C nC VCE = 300 V IC = 200 A Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode

© 2004 IXYS All rights reserved 4 - 4 MWI 200-06 A8 448 Fig. 11 Reverse bi ased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance Fig. 7 Typ. turn on energy Fig. 8 Typ. turn off energy versus collector current versus collector current Fig. 9 Typ. turn on energy Fig.10 Typ. turn off energy versus gate resistor versus gate resistor 0 100 200 300 400 0 100 200 300 400 0.0001 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 0 4 8 12 16 20 0 4 8 1 21 62 0 0 100 200 300 400 500 600 700 100 200 300 400 500 IC A IC A EoffEon RG Ω RG Ω VCE t s mJ Eon mJ Eoff ICM K/W ZthJC V A mJ mJ single pulse diode IGBT MWI200-06A8 RG = 1.5 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V RG = 1.5 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V RG = 1.5 Ω TVJ = 125°C VCE = 300 V VGE = ±15 V IC = 200 Α TVJ = 125°C VCE = 300 V VGE = ±15 V IC = 200 Α TVJ = 125°C