L412

L412 IXYS | Alldatasheet

Document overview

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• PDF pages: 4

Technical content

Features

• High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability  ISOPLUS i4-PAC TM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline

Applications

 switched mode power supplies  DC-DC converters  resonant converters  lamp ballasts  laser generators, x ray generators IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to 150°C IXBF 9N140 1400 V IXBF 9N160 1600 V VGES /G177 20 V IC25 TC = 25°C 7 A IC90 TC = 90°C 4 A ICM VGE = 15/0 V; RG = 100 /G87; TVJ = 125°C 12 A VCEK RBSOA, Clamped inductive load; L = 100 µH 0.8VCES Ptot TC = 25°C 70 W Symbol Conditions Characteristic Values (TVJ = 25/G176C, unless otherwise specified) min. typ. max. VCE(sat) IC = 5 A; VGE = 15 V; TVJ = 25°C 4.9 7 V TVJ = 125°C 5.6 V VGE(th) IC = 0.5 mA; VGE = VCE 48 V ICES VCE = 0.8VCES ; VGE = 0 V; TVJ = 25°C 0.1 mA TVJ = 125°C 0.1 mA IGES VCE = 0 V; VGE = /G177 20 V 500 nA td(on) 200 ns tr 60 ns td(off) 180 ns tf 40 ns C ies VCE = 25 V; VGE = 0 V; f = 1 MHz 550 pF Q Gon VCE = 600V; VGE = 15 V; IC = 7 A 44 nC VF (reverse conduction); IF = 5 A 3.6 V R thJC 1.75 K/W Inductive load, TVJ = 125°C VCE = 960 V; IC = 5 A VGE = 15/0 V; RG = 100 /G87 Advanced Technical Information IXBF 9N140 IXBF 9N160 IC25 = 7 A VCES = 1400/1600 V VCE(sat) = 4.9V tf = 40 ns High Voltage BIMOSFET TM in High Voltage ISOPLUS i4-PAC TM Monolithic Bipolar MOS Transistor

© 2000 IXYS All rights reserved 2 - 4 IXBF 9N140 IXBF 9N160 Component Symbol Conditions Maximum Ratings Tstg -55...+125 /G176C VISOL IISOL /G163 1 mA; 50/60 Hz 2500 V~ FC mounting force with clip 20...120 N Symbol Conditions Characteristic Values min. typ. max. dS,dA C pin - E pin 7 mm dS,dA pin - backside metal 5.5 mm R thCH with heatsink compound 0.15 K/W Weight 9g Dimensions in mm (1 mm = 0.0394")

© 2000 IXYS All rights reserved 3 - 4 VCE - Volts 0 400 800 1200 1600 ICM - Amperes VF - Volts 02468 1 0 IF - Amperes VCE - Volts 0 2 4 6 8 10 12 14 16 18 IC - Amperes Q G - nanocoulombs 0 1 02 03 04 05 0 VGE - Volts VCE - Volts 0 2 4 6 8 1 01 21 41 61 8 IC - Amperes 13V TJ = 25°C VGE = 17VTJ = 125°C VCE = 600V IC = 5A TJ = 125°C VCEK < VCES 15V VGE - Volts 4 6 8 1 01 21 4 IC - Amperes 13V VGE = 17V 15V VCE = 20V TJ = 125°CTJ = 25°CTJ = 125°CTJ = 25°C IXBF 9N140 IXBF 9N160 Fig. 1 Typ. Output Characteristics Fig. 2 Typ. Output Characteristics Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area RBSOA IXBF 9N140 IXBF 9N160

© 2000 IXYS All rights reserved 4 - 4 IC - Amperes 02468 1 0 1 2 1 4 1 6 tfi - nanoseconds R g - Ohms 0 2 04 06 08 0 1 0 0 1 2 0 1 4 0 1 6 0 td(off )- nanoseconds 100 150 200 250 Pulse Width - Seconds 0.0001 0.001 0.01 0.1 1 10 ZthJC - K/W 0.001 0.01 0.1 Single Pulse VCE = 960V VGE = 15V R G = 100/c87 TJ = 125°C IXBF09 VCE = 960V VGE = 15V IC = 5A TJ = 125°C Fig. 7 Typ. Fall Time Fig. 8 Typ. Turn Off Delay Time Fig. 9 Typ. Transient Thermal Impedance IXBF 9N140 IXBF 9N160