L291 IXYS | Alldatasheet

Document overview

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Technical content

Features

  • Package with screw terminals  Isolation voltage 3000 V~  Planar passivated chips  Blocking voltage up to 1800 V  Low forward voltage drop  UL registered E 72873

Applications

 Supplies for DC power equipment  Input rectifiers for PWM inverter  Battery DC power supplies  Field supply for DC motors Advantages  Easy to mount with two screws  Space and weight savings  Improved temperature and power cycling Symbol Conditions Characteristic Values IR VR = VRRM;T VJ = 25°C ≤ 0.3 mA VR = VRRM;T VJ = TVJM ≤ 10.0 mA VF IF = 150 A; T VJ = 25°C ≤ 1.6 V VT0 For power-loss calculations only 0.85 V rT TVJ = TVJM 8m Ω RthJC per diode; DC current 2.6 K/W per module 0.65 K/W RthJK per diode; DC current 2.84 K/W per module 0.71 K/W Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated. IdAVM = 50 A VRRM = 800-1800 V Single Phase Rectifier Bridge * delivery time on request

© 2004 IXYS All rights reserved2 - 2 IXYS reserves the right to change limits, test conditions and dimensions. VBO 50 420 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig.5 Maximum forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor Fig. 6 Transient thermal impedance per diode or thyristor, calculated 0 . 511 . 5 2 2.5 100 150 200 V [V] F IF [A] 1:T = 150° VJ C 2:T = 25°C VJ 0.4 0.6 0.8 1.2 1.4 1.6 10 0 10 1 10 2 10 3t[ms] I (A) FSM TVJ=45°C TVJ=150°C 750 670 I FSM F(OV)

0 V RRM

1 V RRM

TVJ=45°C TVJ=150°C t [ms] As 2 50 100 150 200 70 DC sin.180° rec.120° c.60°re .30° T (°C) C I dAV [A] 0.01 0.1 1 10 K/W Zth t[s] Z thJK Z thJC 3010 100 85 100 105 110 115 120 125 130 135 140 145 150 TC DC sin.180° rec.120° rec.60° rec.30° 5.35 2.35 1.35 0.85 0.6 0.35 = RTHCA [K/W] IFAVM [A] Tamb [K] 05 0 1 0 0 1 5 0 [W] PVTOT PSB 55