L291 IXYS | Alldatasheet
Document overview
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- PDF pages: 2
Technical content
Features
- Package with screw terminals Isolation voltage 3000 V~ Planar passivated chips Blocking voltage up to 1800 V Low forward voltage drop UL registered E 72873
Applications
Supplies for DC power equipment Input rectifiers for PWM inverter Battery DC power supplies Field supply for DC motors Advantages Easy to mount with two screws Space and weight savings Improved temperature and power cycling Symbol Conditions Characteristic Values IR VR = VRRM;T VJ = 25°C ≤ 0.3 mA VR = VRRM;T VJ = TVJM ≤ 10.0 mA VF IF = 150 A; T VJ = 25°C ≤ 1.6 V VT0 For power-loss calculations only 0.85 V rT TVJ = TVJM 8m Ω RthJC per diode; DC current 2.6 K/W per module 0.65 K/W RthJK per diode; DC current 2.84 K/W per module 0.71 K/W Dimensions in mm (1 mm = 0.0394") Data according to IEC 60747 refer to a single diode unless otherwise stated. IdAVM = 50 A VRRM = 800-1800 V Single Phase Rectifier Bridge * delivery time on request
© 2004 IXYS All rights reserved2 - 2 IXYS reserves the right to change limits, test conditions and dimensions. VBO 50 420 Fig. 1 Forward current versus voltage drop per diode Fig. 2 Surge overload current per diode IFSM: Crest value. t: duration Fig.5 Maximum forward current at case temperature Fig. 4 Power dissipation versus direct output current and ambient temperature Fig. 3 ∫i2dt versus time (1-10ms) per diode or thyristor Fig. 6 Transient thermal impedance per diode or thyristor, calculated 0 . 511 . 5 2 2.5 100 150 200 V [V] F IF [A] 1:T = 150° VJ C 2:T = 25°C VJ 0.4 0.6 0.8 1.2 1.4 1.6 10 0 10 1 10 2 10 3t[ms] I (A) FSM TVJ=45°C TVJ=150°C 750 670 I FSM F(OV)
0 V RRM
1 V RRM
TVJ=45°C TVJ=150°C t [ms] As 2 50 100 150 200 70 DC sin.180° rec.120° c.60°re .30° T (°C) C I dAV [A] 0.01 0.1 1 10 K/W Zth t[s] Z thJK Z thJC 3010 100 85 100 105 110 115 120 125 130 135 140 145 150 TC DC sin.180° rec.120° rec.60° rec.30° 5.35 2.35 1.35 0.85 0.6 0.35 = RTHCA [K/W] IFAVM [A] Tamb [K] 05 0 1 0 0 1 5 0 [W] PVTOT PSB 55