KPE4703A KIA | Alldatasheet
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-8A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS KPE4703AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=19mΩ(typ)@V GS=10V n Superlowgatecharge n Greendeviceavailable n ExcellentCdv/dteffectdecline n Advancedhighcelldensitytrenchtechnology 2.Description TheKPE4703AisthehighcelldensitytrenchedP-chMOSFET ’s,whichprovideexcellentRDSON andgatechargeformostofthesynchronousbuckconverterapplications.TheKPE4703Ameetthe RoHsandGreenProductrequirement. 3.Symbol 1of5 Rev1.0Aug.2018
-8A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS KPE4703AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4.Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS -30 V Gate-sourcevoltage VGS +20 V Continuous drain current VGS @-10V1 TA=25ºC ID -8.0 ATA=70ºC -6.4 Pulseddraincurrent 2 IDM -50 A Singlepulseavalancheenergy 3 EAS 96.8 mJ Avalanchecurrent IAS -38 A Totalpowerdissipation 4 TA=25ºC PD 3.1 W TA=70ºC 2 W StorageTemperatureRange TSTG -55to150 ºC OperatingJunctionTemperatureRange TJ -55to150 ºC 5. Thermalcharacteristics Parameter Symbol Typ Max Units Thermalresistance,junction-ambient 1 RθJA - 75 ºC/WThermalresistance,junction-ambient(t ≦ 10s) - 40 Thermalresistance,Junction-case 1 RθJC - 24 2of5 Rev1.0Aug.2018
-8A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS KPE4703AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6.Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-Sourcebreakdownvoltage BVDSS VGS=0V,I D=-250μA -30 - - V BVDSS Temperaturecoefficient △BVDSS/ △TJ Referenceto25 ºC, ID=-1mA - -0.021 - V/ ºC Staticdrain-sourceon-resistance 2 RDS(on) VGS=-10V,ID=-6A - 19 24 mΩ VGS=-4.5V,ID=-4A - 27 32 Gatethresholdvoltage VGS(th) VDS=VGS,I D=-250μA -1 - -2.5 V VGS(th)Temperaturecoefficient △VGS(th) - 4.5 - mV/ºC Drain-SourceLeakageCurrent IDSS VDS=-24V,VGS=0V, TJ=25°C - - -1 μAVDS=-24V,VGS=0V, TJ=55°C - - -5 Gate-sourceleakagecurrent IGSS VGS=+20V,VDS=0V - - +100 nA Forwardtranscendductance gFS VDS=-5V,I D=-6A - 15 - S Gateresistance Rg VDS=0V,V GS=0V, f=1.0MHz - 12 - Ω Totalgatecharge(-4.5V) Qg VDS=-15V,V GS=-4.5V ID =-6A - 12.2 - nCGate-sourcecharge Qgs - 5.0 - Gate-draincharge Qgd - 5.0 - Turn-ondelaytime td(on) VDD=-15V, RG=3.3Ω,V GS=-10V ID=-6A - 4.5 - nsRisetime tr - 15 - Turn-offdelaytime td(off) - 40 - Falltime tf - 19.4 - Inputcapacitance Ciss VGS=0V,V DS=-15V F=1.0MHZ - 1310 - pFOutputcapacitance Coss - 190 - Reversetransfercapacitance Crss - 162 - Diodecharacteristics Continuoussourcecurrent 1.5 IS VG=VD=0V,Force current - - -8 A Pulsedsourcecurrent 2.5 ISM - - -40 A Diodeforwardvoltage 2 VSD VGS=0V,IS=-1A, TJ=25°C - - -1.3 V Reverserecoverytime trr IF=-6A,dl/dt=100A/us, TJ=25°C - 16 - nS Reverserecoverycharge Qrr - 6.1 - nC Note:1.Thedatatestedbysurfacemountedona1inch 2 FR-4boardwith2OZcopper. 2.Thedatatestedbypulsed,pulsewidth ≦300us,dutycycle ≦2%. 4.Thepowerdissipationislimitedby150 ºCjunctiontemperature. 5.ThedataistheoreticallythesameasI D andI DM,inrealapplications,shouldbelimitedbytotalpower dissipation. 3of5 Rev1.0Aug.2018
-8A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS KPE4703AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Testcircuitsandwaveforms 4of5 Rev1.0Aug.2018
-8A，-30V P-CHANNELMOSFETKIA SEMICONDUCTORS KPE4703AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.0Aug.2018