6140A

6140A KIA | Alldatasheet

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10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralFeatures n ProprietaryNewPlanarTechnology n RDS(ON),typ.=0.35Ω@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 2.Applications n BallastandLighting n DC-ACInverter n OtherApplications 3. Pinconfiguration 1of8 Rev1.0Aug2017 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNP6140A TO-220 KIA KNF6140A TO-220F KIA 5. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Symbol Parameter KNP6140A KNF6140A Unit VDSS Drain-to-SourceVoltage [1] 400 VVGSS Gate-to-SourceVoltage ±30 ID ContinuousDrainCurrent 10 10* AContinuousDrainCurrent@Tc=100 ºC Figure3 IDM PulsedDrainCurrentatV GS=10V[2] Figure6 EAS SinglePulseAvalancheEnergy 650 mJ dv/dt PeakDiodeRecoverydv/dt [3] 5.0 V/ns PD PowerDissipation 140 45 W DeratingFactorabove25 ºC 1.12 0.37 W/ ºC TL TPAK MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds 300 260 ºC TJ&TSTG OperatingandStorageTemperatureRange -55to150 *Draincurrentlimitedbymaximumjunctiontemperature Caution:Stressesgreaterthanthoselistedinthe “AbsoluteMaximumRatings ” maycausepermanent damagetothedevice. 6. Thermalcharacteristics Symbol Parameter KNP6140A KNF6140A Unit RθJC ThermalResistance,Junction-to-Case 0.89 2.7 ºC/WRθJA ThermalResistance,Junction-to-Ambient 62 100 2of8 Rev1.0Aug2017

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7. Electricalcharacteristics OFFCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,I D=250uA 400 -- -- V IDSS Drain-to-SourceLeakageCurrent VDS=400V,V GS=0V -- -- 1 uAVDS=320V,VGS=0V, IGSS Gate-to-SourceLeakageCurrent VGS=+30V,VDS=0V -- -- +100 nA VGS=-30V,V DS=0V -- -- -100 ONCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit RDS(ON) StaticDrain-to-SourceOn-Resistance [4] VGS=10V,I D=5A -- 0.35 0.5 Ω VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 2.0 -- 4.0 V gFS ForwardTransconductance [4] VDS=20V,ID=10A -- 12 -- S DynamicCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHZ -- 1254 -- pFCrss ReverseTransferCapacitance -- 21 -- Coss OutputCapacitance -- 150 -- Qg TotalGateCharge VDD=200V, ID=10A, VGS=0to10V -- 28 -- nCQgs Gate-to-SourceCharge -- 7.0 -- Qgd Gate-to-Drain(Miller)Charge -- 11 -- ResistiveSwitchingCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit td(ON) Turn-onDelayTime VDD=200V, ID=10A, VGS=10V RG=12Ω -- 14 -- nS trise RiseTime -- 25 -- td(OFF) Turn-OffDelayTime -- 44 -- tfall FallTime -- 28 -- Source-DrainBodyDiodeCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min Typ. Max. Unit ISD ContinuousSourceCurrent [4] IntegralPN-diodein MOSFET -- -- 10 A ISM PulsedSourceCurrent [4] -- -- 40 VSD DiodeForwardVoltage IS=10A,V GS=0V -- -- 1.5 V trr Reverserecoverytime VGS=0V,I F=10A, diF/dt=100A/μs -- 303 -- ns Qrr Reverserecoverycharge -- 1.8 -- uC Note: 1.TJ=+25°Cto+150 °C 2. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. 3.ISD=10Adi/dt<100A/ μs,VDD<BVDSS ,TJ=+150°C. 4.Pulsewidth ≤380μs;dutycycle ≤2%. 3of8 Rev1.0Aug2017

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8.Testcircuitsandwaveforms 4of8 Rev1.0Aug2017

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of8 Rev1.0Aug2017

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of8 Rev1.0Aug2017

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of8 Rev1.0Aug2017

10A，400V N-CHANNELMOSFETKIA SEMICONDUCTORS 6140AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 8of8 Rev1.0Aug2017