6115A KIA | Alldatasheet
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12A，150V N-CHANNEL MOSFET KIA SEMICONDUCTORS 6115A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description This Power MOSFET is produced using KIA\`s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on -state resistance, provide superior switching performance,and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high effciency switched mode p ower supplies, active power factor correction based on half bridge topology. 2.Features RDS(on)=130m Ω @ VGS=10V High density cell design for ultra low Rdson Fully characterized avalanche voltage and current Good stability and uniformity with high EAS Excellent package for good heat dissipation 3. Pin configuration 1 of 5 Rev 1.1 OCT 2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
12A，150V N-CHANNEL MOSFET KIA SEMICONDUCTORS 6115A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximum ratings (TC= 25 ºC, unless otherwise noted) Parameter Symbol Rating Units Drain-source voltage VDSS 150 V Gate-source voltage VGSS +20 V Drain current continuous ID 12 A Drain current pulsed (note 1) IDM 50 A T otal power dissipation PD 55 W Operating and storage temperature range TJ, TSTG -55~+175 ºC 5. Thermal characteristics Parameter Symbol Rating Unit Thermal resistance,Junction-case (note 2) RthJC 2.7 ºC/W 2 of 5 Rev 1.1 OCT 2014
12A，150V N-CHANNEL MOSFET KIA SEMICONDUCTORS 6115A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electrical characteristics (TC=25°C,unless otherwise noted) Parameter Symbol Conditions Min Typ Max Unit Off characteristics Drain-source breakdown voltage BVDSS VGS=0V,ID=250μA 150 - - V Zero gate voltage drain current IDSS VDS=150V ,VGS=0V - - 1 μA Gate-body leakage current Forward IGSS VGS=20V,VDS=0V - - 100 nA Reverse VGS=-20V,VDS=0V - - -100 nA On characteristics Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 1.5 2.0 2.5 V Static drain-source on-resistance RDS(on) VGS=10V,ID=5A - 130 160 mΩ Forward transconductance gFS VDS=15V,ID=10A - 15 - S Dynamic characteristics Input capacitance Ciss VDS=25V,VGS=0V, f=1MHz - 900 - pF Output capacitance Coss - 115 - pF Reverse transfer capacitance Crss - 70 - pF Switching characteristics Turn-on delay time td(on) VDD=75V,ID=1A, RL=75Ω , VGS=10V,RGEN=6Ω - 8 - ns Rise time tr - 10 - ns Turn-off delay time td(off) - 20 - ns Fall time tf - 15 - ns Total gate charge Qg VDS=75V,ID=1.5A , VGS=10V - 19 - nC Gate-source charge Qgs - 5.5 - nC Gate-drain charge Qgd - 7 - nC Drain-source diode characteristics and maximum ratings Drain-source diode forward voltage(note 3) VSD VGS=0V,ISD=12A - - 1.2 V Continuous drain-source current (note 2) ISD - - 12 A Notes: 1.Repetitive rating: pulse width limited by maximum junction temperature 2. Surface mounted on FR4 board, t <10sec. 3. Pulse test: pulse width<300μs, duty cycle<2% 4. Guaranteed by design, not subject to production 3 of 5 Rev 1.1 OCT 2014
12A，150V N-CHANNEL MOSFET KIA SEMICONDUCTORS 6115A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Test circuits and waveforms 4 of 5 Rev 1.1 OCT 2014
12A，150V N-CHANNEL MOSFET KIA SEMICONDUCTORS 6115A KIA SEMICONDUCTORS KIA SEMICONDUCTORS 5 of 5 Rev 1.1 OCT 2014