3506A KIA | Alldatasheet
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70A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 3506AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n VGS=10V ,RDS(on)=6.5mΩ@ VGS=10V n Special designed for E-Bike controller application n Ultra low On-Resistance n High UIS and UIS 100% test 2.Applications n 48VE-Bikecontrollerapplications n Hardswitchedandhighfrequencycircuits n Uninterruptiblepowersupply 3.Symbol 1of6 Rev1.0Jun.2016 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
70A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 3506AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Unit Drain-sourcevoltage VDS 60 V Gate-sourcevoltage VGS ±25 V Operatingjunctionandstoragetemperaturerange TJ,TSTG -55to175 ºC Continuousdraincurrent TC=25ºC ID 70 A TC=100ºC 49 A Draincurrent-continuous@current-pulsed 1 IDM 280 A Peakdioderecoveryvoltage dv/dt 30 V/ns MaximumpowerdissipationT C=25ºC PD 100 W Deratingfactor 0.66 W/℃ Singlepulseavalancheenergy 2 EAS 410 mJ Note:1.Repetitiverating:Pulsewidthlimitedbymaximumjunctiontemperature. 2.E AS condition:T J=25℃,V DD=33V,V G=10V,I D=40.5A. 5. Electricalcharacteristics Parameter Symbol Value Unit Thermalresistance,Junction-case RthJC 1.5 ºC/W 2of6 Rev1.0Jun.2016
70A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 3506AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250uA 60 - - V Zerogatevoltagedraincurrent IDSS VDS=68V,V GS=0V - - 1 μA TJ=125°C - - 10 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 - 4.0 V Gateleakagecurrent IGSS VGS=+25V,V DS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on) VGS=10V,IDS=40A - 6.5 8.0 mΩ Forwardtransconductance GFS VDS=10V,ID=15A 20 - - S Diodeforwardvoltage VSD ISD=40A,V GS=0V - 0.69 1.1 V Reverserecoverytime 1 trr IF=75A,T J=25°C dlSD/dt=100A/μs - 40 - nS Reverserecoverycharge 1 Qrr - 81 - Nc Forwardturn-ontime tON Intrinsicturn-ontimeisnegligible(turn-onisdominatedby LS+LD) Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 3483 - pFOutputcapacitance Coss - 459 - Reversetransfercapacitance Crss - 214 - Turn-ondelaytime td(on) VDD=30V,IDS=2A, RL=15Ω,VGS=-10V RG=2.5Ω - 11 - ns Risetime tr - 13 - Turn-offdelaytime td(off) - 22 - Falltime tf - 27 - Totalgatecharge Qg VDS=50V,VGS=10V IDS=40A - 82 - nCGate-sourcecharge Qgs - 16.2 -- Gate-draincharge Qgd - 36.7 -- Source-draincurrent(Bodydiode) ISD - 70 - A Pulsedsource-draincurrent ISDM - 280 - A Note:1.Pulsetest;pulsewidth< 300usdutycycle< 1.5%.R G=25Ω,StartingT J=25°C 3of6 Rev1.0Jun.2016
70A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 3506AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.0Jun.2016
70A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 3506AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.0Jun.2016
70A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 3506AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.0Jun.2016