2806A | DigiCamel IC Datasheet

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160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=3.5mΩ（typ.）@V GS=10V n 100% avalanche tested n Reliable and rugged n Leadfreeandgreendeviceavailable （RoHSCompliant ） 2.Applications n Switchingapplication n Powermanagementforinvertersystems n UPS 3.Symbol 1of6 Rev1.2May2016 Pin Function

1 Gate

2 Drain

3 Source

4 Drain

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 60 V Gate-sourcevoltage VGSS +25 V Maximumjunctiontemperature TJ 175 ºC Storagetemperaturerange TSTG -55to175 ºC Diodecontinuousforwardcurrent TC=25ºC IS 160 A Continuousdraincurrent TC=25ºC ID3 160 A TC=100ºC 105 A Pulsedraincurrent* TC=25ºC IDM4 580 A Avalancheenergy,singlepulsed L=0.5mH EAS5 400 mJ Maximumpowerdissipation TC=25 ºC PD 185 W TC=100ºC 92.5 W 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RθJA 62.5 ºC/W Thermalresistance,Junction-case RθJC 0.81 ºC/W 2of6 Rev1.2May2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 60 - - V Zerogatevoltagedraincurrent IDSS VDS=48V,V GS=0V - - 1 μA TJ=85°C - - 10 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Gateleakagecurrent IGSS VGS=+25V,V DS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on)1 VGS=10V,ID=60A - 3.5 4.5 mΩ Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 0.7 - Ω Diodeforwardvoltage VSD1 ISD=60A,V GS=0V - 0.8 1.2 V Reverserecoverytime 2 trr IF=60A,V DD=50V dlSD/dt=100A/μs - 30 - nS Reverserecoverycharge 2 Qrr - 50 - nC Inputcapacitance 2 Ciss VDS=25V,VGS=0V, f=1MHz - 4376 - pFOutputcapacitance 2 Coss - 857 - Reversetransfercapacitance 2 Crss - 334 - Turn-ondelaytime 2 td(on) VDD=30V,I DS=60A, RG=25Ω,VGS=10V - 28 - ns Risetime 2 tr - 18 - Turn-offdelaytime 2 td(off) - 42 - Falltime 2 tf - 54 - Totalgatecharge 2 Qg VDS=48V,V GS=10V IDS=60A - 130 - nCGate-sourcecharge 2 Qgs - 24 -- Gate-draincharge 2 Qgd - 47 -- Note:1:Pulsetest;pulsewidth< 300usdutycycle< 2%. 2.Guaranteedbydesign,notsubjecttoproductiontesting. 3.Packagelimitationcurrentis75A,Calculatedcontinuouscurrentbasedonmaximumallowable junctiontemperature. 4:Repetitiverating,pulsewidthlimitedbyjunctiontemperature. 5:StartingTJ=25 ºC,L=0.5mH. 3of6 Rev1.2May2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.2May2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.2May2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.2May2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=3.5mΩ（typ.）@V GS=10V n 100% avalanche tested n Reliable and rugged n Leadfreeandgreendeviceavailable （RoHSCompliant ） 2.Applications n Switchingapplication n Powermanagementforinvertersystems n UPS 3.Symbol 1of6 Rev1.3Jun.2016 Pin Function

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 60 V Gate-sourcevoltage VGSS +25 V Maximumjunctiontemperature TJ 175 ºC Storagetemperaturerange TSTG -55to175 ºC Diodecontinuousforwardcurrent TC=25ºC IS 160 A Continuousdraincurrent TC=25ºC ID3 160 A TC=100ºC 105 A Pulsedraincurrent* TC=25ºC IDM4 580 A Avalancheenergy,singlepulsed L=0.5mH EAS5 400 mJ Maximumpowerdissipation TC=25 ºC PD 185 W TC=100ºC 92.5 W 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-ambient RθJA 62.5 ºC/W Thermalresistance,Junction-case RθJC 0.81 ºC/W 2of6 Rev1.3Jun.2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250μA 60 - - V Zerogatevoltagedraincurrent IDSS VDS=48V,V GS=0V - - 1 μA TJ=85°C - - 10 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Gateleakagecurrent IGSS VGS=+25V,V DS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on)1 VGS=10V,ID=60A - 3.5 4.5 mΩ Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 0.7 - Ω Diodeforwardvoltage VSD1 ISD=60A,V GS=0V - 0.8 1.2 V Reverserecoverytime 2 trr IF=60A,V DD=50V dlSD/dt=100A/μs - 30 - nS Reverserecoverycharge 2 Qrr - 50 - nC Inputcapacitance 2 Ciss VDS=25V,VGS=0V, f=1MHz - 4376 - pFOutputcapacitance 2 Coss - 857 - Reversetransfercapacitance 2 Crss - 334 - Turn-ondelaytime 2 td(on) VDD=30V,I DS=60A, RG=25Ω,VGS=10V - 28 - ns Risetime 2 tr - 18 - Turn-offdelaytime 2 td(off) - 42 - Falltime 2 tf - 54 - Totalgatecharge 2 Qg VDS=48V,V GS=10V IDS=60A - 130 - nCGate-sourcecharge 2 Qgs - 24 -- Gate-draincharge 2 Qgd - 47 -- Note:1:Pulsetest;pulsewidth< 300usdutycycle< 2%. 2.Guaranteedbydesign,notsubjecttoproductiontesting. 3.Packagelimitationcurrentis75A,Calculatedcontinuouscurrentbasedonmaximumallowable junctiontemperature. 4:Repetitiverating,pulsewidthlimitedbyjunctiontemperature. 5:StartingTJ=25 ºC,L=0.5mH. 3of6 Rev1.3Jun.2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.3Jun.2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.3Jun.2016

160A，60V N-CHANNELMOSFETKIA SEMICONDUCTORS 2806AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.3Jun.2016