3508A KIA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
70A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3508AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Features n RDS(on)=11mΩ（typ.）@V GS=10V n 100% avalanche tested n Reliable and rugged n Leadfreeandgreendeviceavailable （RoHSCompliant ） 2.Applications n Switchingapplication n Powermanagementforinvertersystems 3.Symbol 1of6 Rev1.2Dec2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
70A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3508AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. SwitchingTimeTestCircuitandWaveforms 5. Absolutemaximumratings (TA=25°C,unlessotherwisenoted) Parameter Symbol Rating Units To-220/263 To-252 Drain-sourcevoltage VDSS 80 V Gate-sourcevoltage VGSS ±25 V Maximumjunctiontemperature TJ 175 ºC Storagetemperaturerange TSTG -55to175 ºC Continuousdraincurrent TC=25ºC ID3 70 60 A TC=100ºC 46 36 A Pulseddraincurrent TC=25ºC IDP 240 A Avalanchecurrent IAS 70 A 2of6 Rev1.2Dec2014
70A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3508AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TA=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Drain-sourcebreakdownvoltage BVDSS VGS=0V,IDS=250uA 80 - - V Zerogatevoltagedraincurrent IDSS VDS=24V,V GS=0V - - 1 μA TJ=85°C - - 30 Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 2.0 3.0 4.0 V Gateleakagecurrent IGSS VGS=+25V,V DS=0V - - +100 nA Drain-sourceon-stateresistance RDS(on) VGS=10V,IDS=35A (TO-220\\TO-263) - 11 12 mΩ VGS=10V,IDS=35A (TO-252) 11 15 mΩ Gateresistance Rg VDS=0V,V GS=0V,f=1MHz - 1.5 - Ω Diodeforwardvoltage VSD ISD=20A,V GS=0V - 0.8 1.3 V Reverserecoverytime trr ISD=35A, dlSD/dt=100A/μs - 44 - nS Reverserecoverycharge Qrr - 60 - nC Inputcapacitance Ciss VDS=30V,VGS=0V, f=1MHz - 2900 - pFOutputcapacitance Coss - 290 - Reversetransfercapacitance Crss - 175 - Turn-ondelaytime td(on) VDD=30V,IDS=1A, RL=30Ω,VGEN=-10V RG=6Ω - 14 25 ns Risetime tr - 11 20 Turn-offdelaytime td(off) - 51 92 Falltime tf - 22 40 Totalgatecharge Qg VDS=30V,VGS=10V IDS=35A - 55 77 nCGate-sourcecharge Qgs - 12 -- Gate-draincharge Qgd - 16 -- Note:1.Pulsetest;pulsewidth< 300usdutycycle< 2%. 2.Guaranteedbydesign,notsubjecttoproductiontesting. 3of6 Rev1.2Dec2014
70A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3508AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.2Dec2014
70A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3508AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.2Dec2014
70A，80V N-CHANNELMOSFETKIA SEMICONDUCTORS 3508AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.2Dec2014