7115A KIA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 5
Technical content
20A，150V N-CHANNELMOSFETKIA SEMICONDUCTORS 7115AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description ThisPowerMOSFETisproducedusingKIA\`sadvancedplanarstripeDMOStechnology.This advancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperior switchingperformance,andwithstandhighenergypulseintheavalancheandcommutationmode.These devicesarewellsuitedforhigheffciencyswitchedmodepowersupplies,activepowerfactorcorrection basedonhalfbridgetopology. 2.Features n RDS(on)=70m Ω@V GS=10V n HighdensitycelldesignforultralowRdson n Fullycharacterizedavalanchevoltageandcurrent n GoodstabilityanduniformitywithhighE AS n Excellentpackageforgoodheatdissipation 3. Pinconfiguration 1of5 Rev1.1OCT2014 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
20A，150V N-CHANNELMOSFETKIA SEMICONDUCTORS 7115AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25 ºC,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 150 V Gate-sourcevoltage VGSS +20 V Draincurrentcontinuous TC=25ºC ID 20 A TC=100ºC 14 A Draincurrentpulsed IDM 40 A Avalancheenergy Singlepulse(note5) EAS 200 mJ Totalpowerdissipation TC=25 ºC PD 75 W derateabove25 ºC 0.5 W/ºC Operatingandstoragetemperaturerange TJ, TSTG -55~+175 ºC 5. Thermalcharacteristics Parameter Symbol Rating Unit Thermalresistance,Junction-case(note2) RthJC 2.0 ºC/W 2of5 Rev1.1OCT2014
20A，150V N-CHANNELMOSFETKIA SEMICONDUCTORS 7115AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TC=25°C,unlessotherwisenoted) Parameter Symbol Conditions Min Typ Max Unit Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 150 165 - V Zerogatevoltagedraincurrent IDSS VDS=150V,V GS=0V - - 1 μA Gate-bodyleakagecurrent Forward IGSS VGS=20V,VDS=0V - - 100 nA Reverse VGS=-20V,VDS=0V - - -100 nA Oncharacteristics Gatethresholdvoltage VGS(th) VDS=VGS,I D=250μA 1.2 1.6 2.5 V Staticdrain-sourceon-resistance RDS(on) VGS=10V,ID=10A - 70 85 mΩ Forwardtransconductance gFS VDS=5V,ID=10A - 20 - S Dynamiccharacteristics Inputcapacitance Ciss VDS=25V,VGS=0V, f=1MHz - 2500 - pF Outputcapacitance Coss - 326 - pF Reversetransfercapacitance Crss - 202 - pF Switchingcharacteristics Turn-ondelaytime td(on) VDD=75V,RL=5Ω, VGS=10V,RGEN=3Ω - 10.5 - ns Risetime tr - 5.5 - ns Turn-offdelaytime td(off) - 14.5 - ns Falltime tf - 3 - ns Totalgatecharge Qg VDS=75V,ID=10A, VGS=10V - 18 - nC Gate-sourcecharge Qgs - 4.1 - nC Gate-draincharge Qgd - 4.5 - nC Drain-sourcediodecharacteristicsandmaximumratings Drain-sourcediodeforwardvoltage(note3) VSD VGS=0V,ISD=20A - - 1.2 V Continuousdrain-sourcecurrent(note2) ISD - - 20 A Reverserecoverytime trr TJ=25℃，IF=10A dlF/dt=100A/μs (note4) - 32 - ns Reverserecoverycharge Qrr - 53 - μC Note:1.repetitiverating:pulsewidthlimitedbymaximumjunctiontemperature 2.SurfacemountedonFR4board,t< 10sec. 3.Pulsetest:pulsewidth< 300μs,dutycycle< 2% 4.Guaranteedbydesign,notsubjecttoproduction 5.EAScondition:T J =25℃，VDD=50V，VG=10V，L=0.5mH，Rg=25Ω. 3of5 Rev1.1OCT2014
20A，150V N-CHANNELMOSFETKIA SEMICONDUCTORS 7115AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of5 Rev1.1OCT2014
20A，150V N-CHANNELMOSFETKIA SEMICONDUCTORS 7115AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of5 Rev1.1OCT2014