7610A KIA | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 6
Technical content
25A,100V N-CHANNELMOSFETKIA SEMICONDUCTORS 7610AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.Description KIA7610Adesignedbythetrenchprocessingtechniquestoachieveextremelylowon-resistance. ATditionalfeaturesofthisdesignarea175 ℃ junctionoperatingtemperature,fastswitchingspeedand improvedrepetitiveavalancherating.Thesefeaturescombinetomakethisdesignanextremelyefficient andreliabledeviceforuseinDC-DCConvertersandOff-lineUPSandawidevarietyofotherapplications. 2.Features n RDS(on) =32mΩ n LowOn-resistance n Fastswitching n 100%avalanchetested n Repetitiveavalanchealloweduptotjmax n LeAT-Free,RoHScompliant 3. Pinconfiguration 1of6 Rev1.2JAN2015 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
25A,100V N-CHANNELMOSFETKIA SEMICONDUCTORS 7610AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. Absolutemaximumratings (TC=25ºC,unlessotherwisenoted) Parameter Symbol Rating Units Drain-sourcevoltage VDSS 100 V Draincurrentcontinuous TC=25ºC ID 25 A TC=100ºC 16 A Draincurrentpulsed (note1) TC=25ºC IDM 100 A Gate-sourcevoltage VGSS ±20 V SinglePulseavalancheenergy (note2) EAS 90 mJ Powerdissipation TC=25ºC PD 60 W Maximumjunctiontemperature TJ 175 ºC Operatingandstoragetemperaturerange TSTG -55~+175 ºC Diodecontinuousforwardcurrent (note1) TC=25ºC IS 25 A 5. Thermalcharacteristics Parameter Symbol Typ Max Unit Thermalresistancejunction-case RthJC - 1.8 ºC/W Thermalresistancejunction-ambient RthJA - 75 2of6 Rev1.2JAN2015
25A,100V N-CHANNELMOSFETKIA SEMICONDUCTORS 7610AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics (TJ=25°C,unlessotherwisenoted) Parameter Symbol TestConditions Min Typ Max Units Offcharacteristics Drain-sourcebreakdownvoltage BVDSS VGS=0V,ID=250μA 100 - - V Zerogatevoltagedrain current TC=25ºC IDSS VDS=100V,VGS=0V - - 10 μA TC=125ºC VDS=100V,VGS=0V - - 100 μA Gate-bodyleakagecurrent IGSS VGS=±20V,VDS=0V - - ±100 nA Oncharacteristics Gatethresholdvoltage VGS(TH) VDS=VGS,ID=250μA 1.0 1.5 3.0 V Staticdrain-sourceon-resistance RDS(ON) VGS=10V,ID=14A - 32 38 mΩ Dynamiccharacteristics Inputcapacitance CISS VDS=50V,VGS=0V, f=1MHZ - 2020 - pF Outputcapacitance COSS - 450 - pF Reversetransfercapacitance CRSS - 255 - pF Switchingcharacteristics Turn-ondelaytime tD(ON) VDD=50V,RG=6.8Ω, ID=1A,V GS=10V, RL=25Ω, - 25 - ns Risetime tR - 19 - ns Turn-offdelaytime tD(OFF) - 58 - ns Falltime tF - 75 - ns Totalgatecharge QG VDS=50V,VGS=10V ID=10A - 55 - nC Gate-sourcecharge QGS - 13.6 - nC Gate-draincharge QGD - 11.2 - nC Drain-sourcediodecharacteristics Continuousdrain-sourcecurrent IS - - 25 A Drain-sourcediodeforwardvoltage VSD VGS=0V,IS=12A - 0.82 1.3 V Reverserecoverytime tRR VGS=0V,IF=12A, diF/dt=100A/μs - 60 - nS Reverserecoverycharge QRR - 95 - nC Note:1.Pulsewidth< 300μs,dutycycle< 2%pulsewidthlimitedbymaximumjunctiontemperature 2.LimitedbyTjmax,startingTJ=25 ℃,L=0.5mH,RG=25Ω,IAS=19A,VGS=10V 3of6 Rev1.2JAN2015
25A,100V N-CHANNELMOSFETKIA SEMICONDUCTORS 7610AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of6 Rev1.2JAN2015
25A,100V N-CHANNELMOSFETKIA SEMICONDUCTORS 7610AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of6 Rev1.2JAN2015
25A,100V N-CHANNELMOSFETKIA SEMICONDUCTORS 7610AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of6 Rev1.2JAN2015