KNX9130A KIA | Alldatasheet
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40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 1.GeneralFeatures n ProprietaryNewPlanarTechnology n RDS(ON),typ.=100mΩ@VGS=10V n LowGateChargeMinimizeSwitchingLoss n FastRecoveryBodyDiode 2.Applications n DC-DCConverters n DC-ACInvertersforUPS n SMPSandMotorcontrols 3. Pinconfiguration 1of7 Rev1.0MAR2019 Pin Function
1 Gate
2 Drain
3 Source
4 Drain
40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 4. OrderingInformation PartNumber Package Brand KNP9130A TO-220 KIA KNH9130A TO-3P KIA 5. Absolutemaximumratings (TC=25 ºC,unlessotherwisespecified) Symbol Parameter Rating UnitTO-220 TO-3P VDSS Drain-to-SourceVoltage [1] 250 VVGSS Gate-to-SourceVoltage ±20 ID ContinuousDrainCurrent 40 AContinuousDrainCurrent@Tc=100 ºC Figure3 IDM PulsedDrainCurrentatV GS=10V[2] Figure6 EAS SinglePulseAvalancheEnergy 1250 mJ dv/dt PeakDiodeRecoverydv/dt [3] 5.0 V/ns PD PowerDissipation 125 150 W DeratingFactorabove25 ºC 1.0 1.2 W/ ºC TL TPAK MaximumTemperatureforSoldering Leadsat0.063in(1.6mm)fromCasefor10 seconds,PackageBodyfor10seconds 300 260 ºC TJ&TSTG OperatingandStorageTemperatureRange -55to150 Caution:Stressesgreaterthanthoselistedinthe “AbsoluteMaximumRatings ” maycausepermanent damagetothedevice. 6. Thermalcharacteristics Symbol Parameter Ratin UnitTO-220 TO-3P RθJC ThermalResistance,Junction-to-Case 1.0 0.83 ºC/WRθJA ThermalResistance,Junction-to-Ambient 62 2of7 Rev1.0MAR2019
40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6. Electricalcharacteristics OFFCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit BVDSS Drain-to-SourceBreakdownVoltage VGS=0V,I D=250uA 300 -- -- V IDSS Drain-to-SourceLeakageCurrent VDS=250V,V GS=0V -- -- 1 uAVDS=200V,VGS=0V, IGSS Gate-to-SourceLeakageCurrent VGS=+20V,VDS=0V -- -- +100 nA VGS=-20V,V DS=0V -- -- -100 ONCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min. Typ. Max. Unit RDS(ON) StaticDrain-to-SourceOn-Resistance [4] VGS=10V,I D=20A -- 100 150 mΩ VGS(TH) GateThresholdVoltage VDS=VGS,ID=250uA 2.0 -- 4.0 V gFS ForwardTransconductance [4] VDS=15V,ID=20A -- 60 -- S DynamicCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit Ciss InputCapacitance VGS=0V, VDS=25V, f=1.0MHZ -- 3100 -- pFCoss OutputCapacitance 250 Crss ReverseTransferCapacitance -- 80 -- Qg TotalGateCharge VDD=100V, ID=20A, VGS=0to10V -- 95 -- nCQgs Gate-to-SourceCharge -- 15 -- Qgd Gate-to-Drain(Miller)Charge -- 40 -- ResistiveSwitchingCharacteristics Essentiallyindependentofoperatingtemperature Symbol Parameter TestConditions Min. Typ. Max. Unit td(ON) Turn-onDelayTime VDD=100V, ID=20A, VGS=10V RG=3.9Ω -- 20 -- nS trise RiseTime -- 32 -- td(OFF) Turn-OffDelayTime -- 64 -- tfall FallTime -- 26 -- Source-DrainBodyDiodeCharacteristics (TJ=25°C,unlessotherwisespecified) Symbol Parameter TestConditions Min Typ. Max. Unit ISD ContinuousSourceCurrent [4] IntegralPN-diodein MOSFET -- -- 40 A ISM PulsedSourceCurrent [4] -- -- 160 VSD DiodeForwardVoltage IS=40A,V GS=0V -- -- 1.5 V trr Reverserecoverytime VGS=0V,I F=20A, diF/dt=100A/μs -- 255 -- ns Qrr Reverserecoverycharge -- 400 -- uC Note: 1.TJ=+25°Cto+150 °C 2. Repetitiverating;pulsewidthlimitedbymaximumjunctiontemperature. 3.ISD=20Adi/dt<100A/ μs,VDD<BVDSS ,TJ=+150°C. 4.Pulsewidth ≤380μs;dutycycle ≤2%. 3of7 Rev1.0MAR2019
40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7.Testcircuitsandwaveforms 4of7 Rev1.0MAR2019
40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 5of7 Rev1.0MAR2018
40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 6of7 Rev1.0MAR2018
40A，300V N-CHANNELMOSFETKIA SEMICONDUCTORS KNX9130AKIA SEMICONDUCTORS KIA SEMICONDUCTORS 7of7 Rev1.0MAR2019